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2 Meg x 8 Smart 5 Even-Sectored Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice.
F42.p65 – Rev. 1/00 ©2000, Micron Technology, Inc.
ADVANCE
2 MEG x 8
SMART 5 EVEN-SECTORED FLASH MEMORY
WRITE AND ERASE DURATION CHARACTERISTICS
5V VPP
PARAMETER TYP MAX UNITS NOTES
WRITE time 8 TBD µs 1
BLOCK ERASE time 0.5 TBD s 1
BLOCK WRITE time 0.5 TBD s 1, 2, 3
ERASE SUSPEND latency to READ 9 12 µs 1
SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS:
WE# (CE#)-CONTROLLED WRITES
(0°C £ T
A
£ +70°C; VCC = +5V ±10%)
AC CHARACTERISTICS -9
PARAMETER SYMBOL MIN UNITS NOTES
WRITE cycle time
t
WC 90 ns
WE# (CE#) HIGH pulse width
t
WPH (
t
CPH) 25 ns
WE# (CE#) pulse width
t
WP (
t
CP) 50 ns
Address setup time to WE# (CE#) HIGH
t
AS 40 ns
Address hold time from WE# (CE#) HIGH
t
AH 5 ns
Data setup time to WE# (CE#) HIGH
t
DS 40 ns
Data hold time from WE# (CE#) HIGH
t
DH 5 ns
CE# (WE#) setup time to WE# (CE#) LOW
t
CS (
t
WS) 0 ns
CE# (WE#) hold time from WE# (CE#) HIGH
t
CH (
t
WH) 0 ns
VPP setup time to WE# (CE#) HIGH
t
VPS 100 ns
RP# HIGH to WE# (CE#) LOW delay
t
RS 1,000 ns
WRITE duration
t
WED1 6 µs
BLOCK ERASE duration
t
WED2 600 ms
WRITE recovery to READ
t
WR 0 ns
VPP hold time from status data valid, RY/BY# HIGH
t
VPH 0 ns
WE# (CE#) HIGH to RY/BY# LOW
t
RYBY 90 ns
WE# (CE#) HIGH to busy status (SR7 = 0)
t
WB 200 ns
NOTE: 1. Typical values measured at T
A
= +25°C.
2. Assumes no system overhead.
3. Typical WRITE times use checkerboard data pattern.
