16
2 Meg x 8 Smart 5 Even-Sectored Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice.
F42.p65 – Rev. 1/00 ©2000, Micron Technology, Inc.
ADVANCE
2 MEG x 8
SMART 5 EVEN-SECTORED FLASH MEMORY
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC READ
OPERATING CONDITIONS
(0°C £ T
A
£ +70°C)
PARAMETER/CONDITION SYMBOL MIN MAX UNITS NOTES
5V Supply Voltage VCC 4.5 5.5 V 1
Input High (Logic 1) Voltage, all inputs VIH 2VCC + 0.5 V 1
Input Low (Logic 0) Voltage, all inputs VIL -0.5 0.8 V 1
ABSOLUTE MAXIMUM RATINGS*
Voltage on VCC Supply
Relative to VSS ............................. -0.5V to +6V**
Input Voltage Relative to VSS ................ -0.5V to +6V**
VPP Voltage Relative to VSS ................. -0.5V to +12.6V
†
Temperature Under Bias ...................... -10°C to +80°C
Storage Temperature (plastic) ............ -55°C to +125°C
Power Dissipation ................................................... 1W
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**VCC, input and I/O pins may transition to -2V for
<20ns and VCC + 2V for <20ns.
†
Voltage may pulse to -2V for <20ns and 14V for <20ns.
DC OPERATING CHARACTERISTICS
(0°C £ T
A
£ +70°C)
PARAMETER/CONDITION SYMBOL MIN MAX UNITS NOTES
OUTPUT VOLTAGE LEVELS (TTL) VOH1 2.4 – V
Output High Voltage (IOH = -2.5mA) 1
Output Low Voltage (IOL = 5.8mA) VOL – 0.45 V
OUTPUT VOLTAGE LEVELS (CMOS) VOH2 VCC - 0.4 – V 1
Output High Voltage (IOH = -100µA)
INPUT LEAKAGE CURRENT
Any input (0V £ VIN £ VCC); IL -1 1 µA
All other pins not under test = 0V
OUTPUT LEAKAGE CURRENT IOZ -10 10 µA
(DOUT is disabled; 0V £ VOUT £ VCC)
NOTE: 1. All voltages referenced to VSS.
