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AT45DB321D-MU

Part # AT45DB321D-MU
Description FLASH, 32MB, DFN-8, Memory Size:32Mbit, Flash Memory Confi
Category IC
Availability Out of Stock
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1 + $2.30280



Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Features
Single 2.7V - 3.6V Supply
RapidS
Serial Interface: 66 MHz Maximum Clock Frequency
SPI Compatible Modes 0 and 3
User Configurable Page Size
512 Bytes per Page
528 Bytes per Page
Page Program Operation
Intelligent Programming Operation
8,192 Pages (512/528 Bytes/Page) Main Memory
Flexible Erase Options
Page Erase (512 Bytes)
Block Erase (4 Kbytes)
Sector Erase (64 Kbytes)
Chip Erase (32 Mbits)
Two SRAM Data Buffers (512/528 Bytes)
Allows Receiving of Data while Reprogramming the Flash Array
Continuous Read Capability through Entire Array
Ideal for Code Shadowing Applications
Low-power Dissipation
7 mA Active Read Current Typical
25 µA Standby Current Typical
5 µA Deep Power Down Typical
Hardware and Software Data Protection Features
Individual Sector
Sector Lockdown for Secure Code and Data Storage
Individual Sector
Security: 128-byte Security Register
64-byte User Programmable Space
Unique 64-byte Device Identifier
JEDEC Standard Manufacturer and Device ID Read
100,000 Program/Erase Cycles Per Page Minimum
Data Retention – 20 Years
Industrial Temperature Range
Green (Pb/Halide-free/RoHS Compliant) Packaging Options
1. Description
The AT45DB321D is a 2.7-volt, serial-interface sequential access Flash memory
ideally suited for a wide variety of digital voice-, image-, program code- and data-stor-
age applications. The AT45DB321D supports RapidS serial interface for applications
requiring very high speed operations. RapidS serial interface is SPI compatible for
frequencies up to 66 MHz. Its 34,603,008 bits of memory are organized as 8,192
pages of 512 bytes or 528 bytes each. In addition to the main memory, the
AT45DB321D also contains two SRAM buffers of 512/528 bytes each. The buffers
allow the receiving of data while a page in the main Memory is being reprogrammed,
as well as writing a continuous data stream. EEPROM emulation (bit or byte alterabil-
ity) is easily handled with a self-contained three step read-modify-write operation.
Unlike conventional Flash memories that are accessed randomly with multiple
address lines and a parallel interface, the DataFlash uses a RapidS serial interface to
32-megabit
2.7-volt
DataFlash
®
AT45DB321D
Preliminary
3597H–DFLASH–02/07
2
3597H–DFLASH–02/07
AT45DB321D [Preliminary]
sequentially access its data. The simple sequential access dramatically reduces active pin
count, facilitates hardware layout, increases system reliability, minimizes switching noise, and
reduces package size. The device is optimized for use in many commercial and industrial appli-
cations where high-density, low-pin count, low-voltage and low-power are essential.
To allow for simple in-system reprogrammability, the AT45DB321D does not require high input
voltages for programming. The device operates from a single power supply, 2.7V to 3.6V, for
both the program and read operations. The AT45DB321D is enabled through the chip select pin
(CS
) and accessed via a three-wire interface consisting of the Serial Input (SI), Serial Output
(SO), and the Serial Clock (SCK).
All programming and erase cycles are self-timed.
2. Pin Configurations and Pinouts
Figure 2-1. MLF and CASON
Top View through Package
Figure 2-2. SOIC Top View
Figure 2-3. DataFlash Card
(1)
Top View through Package
Note: 1. See AT45DCB004D Datasheet.
Figure 2-4. TSOP Top View: Type 1
Note: TSOP package is not recommended for new designs. Future die
shrinks will support 8-pin packages only.
SI
SCK
RESET
CS
SO
GND
VCC
WP
8
7
6
5
1
2
3
4
1
2
3
4
8
7
6
5
SI
SCK
RESET
CS
SO
GND
VCC
WP
7654321
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
RDY/BUSY
RESET
WP
NC
NC
VCC
GND
NC
NC
NC
CS
SCK
SI
SO
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
3
3597H–DFLASH–02/07
AT45DB321D [Preliminary]
Table 2-1. Pin Configurations
Symbol Name and Function
Asserted
State Type
CS
Chip Select: Asserting the CS pin selects the device. When the CS pin is deasserted, the device
will be deselected and normally be placed in the standby mode (not Deep Power-Down mode),
and the output pin (SO) will be in a high-impedance state. When the device is deselected, data
will not be accepted on the input pin (SI).
A high-to-low transition on the CS
pin is required to start an operation, and a low-to-high
transition is required to end an operation. When ending an internally self-timed operation such as
a program or erase cycle, the device will not enter the standby mode until the completion of the
operation.
Low Input
SCK
Serial Clock: This pin is used to provide a clock to the device and is used to control the flow of
data to and from the device. Command, address, and input data present on the SI pin is always
latched on the rising edge of SCK, while output data on the SO pin is always clocked out on the
falling edge of SCK.
Input
SI
Serial Input: The SI pin is used to shift data into the device. The SI pin is used for all data input
including command and address sequences. Data on the SI pin is always latched on the rising
edge of SCK. If the SER/BYTE
pin is always driven low, the SI pin should be a “no connect”.
Input
SO
Serial Output: The SO pin is used to shift data out from the device. Data on the SO pin is always
clocked out on the falling edge of SCK. If the SER/BYTE pin is always driven low, the SO pin
should be a “no connect”.
Output
WP
Write Protect: When the WP pin is asserted, all sectors specified for protection by the Sector
Protection Register will be protected against program and erase operations regardless of whether
the Enable Sector Protection command has been issued or not. The WP
pin functions
independently of the software controlled protection method. After the WP pin goes low, the
content of the Sector Protection Register cannot be modified.
If a program or erase command is issued to the device while the WP
pin is asserted, the device
will simply ignore the command and perform no operation. The device will return to the idle state
once the CS
pin has been deasserted. The Enable Sector Protection command and Sector
Lockdown command, however, will be recognized by the device when the WP pin is asserted.
The WP
pin is internally pulled-high and may be left floating if hardware controlled protection will
not be used. However, it is recommended that the WP pin also be externally connected to V
CC
whenever possible.
Low Input
RESET
Reset: A low state on the reset pin (RESET) will terminate the operation in progress and reset
the internal state machine to an idle state. The device will remain in the reset condition as long as
a low level is present on the RESET
pin. Normal operation can resume once the RESET pin is
brought back to a high level.
The device incorporates an internal power-on reset circuit, so there are no restrictions on the
RESET
pin during power-on sequences. If this pin and feature are not utilized it is recommended
that the RESET
pin be driven high externally.
Low Input
RDY/BUSY
Ready/Busy: This open drain output pin will be driven low when the device is busy in an
internally self-timed operation. This pin, which is normally in a high state (through an external
pull-up resistor), will be pulled low during programming/erase operations, compare operations,
and page-to-buffer transfers.
The busy status indicates that the Flash memory array and one of the buffers cannot be
accessed; read and write operations to the other buffer can still be performed.
Output
V
CC
Device Power Supply: The V
CC
pin is used to supply the source voltage to the device.
Operations at invalid V
CC
voltages may produce spurious results and should not be attempted.
–Power
GND
Ground: The ground reference for the power supply. GND should be connected to the system
ground.
Ground
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