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AT45DB321D-MU

Part # AT45DB321D-MU
Description FLASH, 32MB, DFN-8, Memory Size:32Mbit, Flash Memory Confi
Category IC
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

10
3597H–DFLASH–02/07
AT45DB321D [Preliminary]
7.6 Sector Erase
The Sector Erase command can be used to individually erase any sector in the main memory.
There are 64 sectors and only one sector can be erased at one time. To perform sector 0a or
sector 0b erase for the DataFlash standard page size (528 bytes), an opcode of 7CH must be
loaded into the device, followed by three address bytes comprised of 1 don’t care bit, 10 page
address bits (PA12 - PA3) and 13 don’t care bits. To perform a sector 1-63 erase, the opcode
7CH must be loaded into the device, followed by three address bytes comprised of 1 don’t
care bit, 4 page address bits (PA12 - PA9) and 19 don’t care bits. To perform sector 0a or sector
0b erase for the binary page size (512 bytes), an opcode of 7CH must be loaded into the
device, followed by three address bytes comprised of 2 don’t care bit and 10 page address bits
(A21 - A12) and 12 don’t care bits. To perform a sector 1-63 erase, the opcode 7CH must be
loaded into the device, followed by three address bytes comprised of 2 don’t care bits and
4 page address bits (A21 - A18) and 18 don’t care bits. The page address bits are used to spec-
ify any valid address location within the sector which is to be erased. When a low-to-high
transition occurs on the CS
pin, the part will erase the selected sector. The erase operation is
internally self-timed and should take place in a maximum time of t
SE
. During this time, the status
register and the RDY/BUSY
pin will indicate that the part is busy.
7.7 Chip Erase
(1)
The entire main memory can be erased at one time by using the Chip Erase command.
To execute the Chip Erase command, a 4-byte command sequence C7H, 94H, 80H and 9AH
must be clocked into the device. Since the entire memory array is to be erased, no address
bytes need to be clocked into the device, and any data clocked in after the opcode will be
ignored. After the last bit of the opcode sequence has been clocked in, the CS
pin can be deas-
serted to start the erase process. The erase operation is internally self-timed and should take
place in a time of t
CE
. During this time, the Status Register will indicate that the device is busy.
The Chip Erase command will not affect sectors that are protected or locked down; the contents
of those sectors will remain unchanged. Only those sectors that are not protected or locked
down will be erased.
Table 7-2. Sector Erase Addressing
PA12/
A21
PA11/
A20
PA10/
A19
PA9/
A18
PA8/
A17
PA7/
A16
PA6/
A15
PA5/
A14
PA4/
A13
PA3/
A12
PA2/
A11
PA1/
A10
PA0/
A9 Sector
0000000000XXX 0a
0000000001XXX 0b
000001XXXXXXX 1
000010XXXXXXX 2
111100XXXXXXX 60
111101XXXXXXX 61
111110XXXXXXX 62
111111XXXXXXX 63
11
3597H–DFLASH–02/07
AT45DB321D [Preliminary]
The WP pin can be asserted while the device is erasing, but protection will not be activated until
the internal erase cycle completes.
Figure 7-1. Chip Erase
Note: 1. Refer to the errata regarding Chip Erase on page 54.
7.8 Main Memory Page Program Through Buffer
This operation is a combination of the Buffer Write and Buffer to Main Memory Page Program
with Built-in Erase operations. Data is first clocked into buffer 1 or buffer 2 from the input pin (SI)
and then programmed into a specified page in the main memory. To perform a main memory
page program through buffer for the DataFlash standard page size (528 bytes), a 1-byte opcode,
82H for buffer 1 or 85H for buffer 2, must first be clocked into the device, followed by three
address bytes. The address bytes are comprised of 1 don’t care bit, 13 page address bits,
(PA12 - PA0) that select the page in the main memory where data is to be written, and 10 buffer
address bits (BFA9 - BFA0) that select the first byte in the buffer to be written. To perform a
main memory page program through buffer for the binary page size (512 bytes), the opcode 82H
for buffer 1 or 85H for buffer 2, must be clocked into the device followed by three address bytes
consisting of 2 don’t care bits, 13 page address bits (A21 - A9) that specify the page in the main
memory to be written, and 9 buffer address bits (BFA8 - BFA0) that selects the first byte in the
buffer to be written. After all address bytes are clocked in, the part will take data from the input
pins and store it in the specified data buffer. If the end of the buffer is reached, the device will
wrap around back to the beginning of the buffer. When there is a low-to-high transition on the CS
pin, the part will first erase the selected page in main memory to all 1s and then program the
data stored in the buffer into that memory page. Both the erase and the programming of the
page are internally self-timed and should take place in a maximum time of t
EP
. During this time,
the status register and the RDY/BUSY
pin will indicate that the part is busy.
8. Sector Protection
Two protection methods, hardware and software controlled, are provided for protection against
inadvertent or erroneous program and erase cycles. The software controlled method relies on
the use of software commands to enable and disable sector protection while the hardware con-
trolled method employs the use of the Write Protect (WP
) pin. The selection of which sectors
that are to be protected or unprotected against program and erase operations is specified in the
nonvolatile Sector Protection Register. The status of whether or not sector protection has been
enabled or disabled by either the software or the hardware controlled methods can be deter-
mined by checking the Status Register.
Command Byte 1 Byte 2 Byte 3 Byte 4
Chip Erase C7H 94H 80H 9AH
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
CS
Each transition
represents 8 bits
SI
12
3597H–DFLASH–02/07
AT45DB321D [Preliminary]
8.1 Software Sector Protection
8.1.1 Enable Sector Protection Command
Sectors specified for protection in the Sector Protection Register can be protected from program
and erase operations by issuing the Enable Sector Protection command. To enable the sector
protection using the software controlled method, the CS
pin must first be asserted as it would be
with any other command. Once the CS
pin has been asserted, the appropriate 4-byte command
sequence must be clocked in via the input pin (SI). After the last bit of the command sequence
has been clocked in, the CS
pin must be deasserted after which the sector protection will be
enabled.
Figure 8-1. Enable Sector Protection
8.1.2 Disable Sector Protection Command
To disable the sector protection using the software controlled method, the CS
pin must first be
asserted as it would be with any other command. Once the CS
pin has been asserted, the
appropriate 4-byte sequence for the Disable Sector Protection command must be clocked in via
the input pin (SI). After the last bit of the command sequence has been clocked in, the CS
pin
must be deasserted after which the sector protection will be disabled. The WP
pin must be in the
deasserted state; otherwise, the Disable Sector Protection command will be ignored.
Figure 8-2. Disable Sector Protection
8.1.3 Various Aspects About Software Controlled Protection
Software controlled protection is useful in applications in which the WP
pin is not or cannot be
controlled by a host processor. In such instances, the WP
pin may be left floating (the WP pin is
internally pulled high) and sector protection can be controlled using the Enable Sector Protection
and Disable Sector Protection commands.
If the device is power cycled, then the software controlled protection will be disabled. Once the
device is powered up, the Enable Sector Protection command should be reissued if sector pro-
tection is desired and if the WP
pin is not used.
Command Byte 1 Byte 2 Byte 3 Byte 4
Enable Sector Protection 3DH 2AH 7FH A9H
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
CS
Each transition
represents 8 bits
SI
Command Byte 1 Byte 2 Byte 3 Byte 4
Disable Sector Protection 3DH 2AH 7FH 9AH
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
CS
Each transition
represents 8 bits
SI
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