FEATURES
D TrenchFETr Power MOSFET
D 100% R
g
Tested
Si2306DS
Vishay Siliconix
Document Number: 70827
S-31873—Rev. C, 15-Sep-03
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V) r
DS(on)
(W) I
D
(A)
0.057 @ V
GS
= 10 V 3.5
0.094 @ V
GS
= 4.5 V 2.8
-
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2306DS (A6)*
*Marking Code
Ordering Information: Si2306DS-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
30
Gate-Source Voltage V
GS
"20
V
Continuous Drain Current (T
J
=
_
a,
b
T
A
= 25_C
3.5
on
nuous
ra
n
urren
J
=
,
T
A
= 70_C
D
2.8
Pulsed Drain Current I
DM
16
Continuous Source Current (Diode Conduction)
a,
b
I
S
1.25
Maximum Power Dissipation
a,
b
T
A
= 25_C
1.25
Maximum Power Dissipation
a,
T
A
= 70_C
P
D
0.80
W
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction to Ambient
a
t v 5 sec
100
Maximum Junction-to-Ambient
a
Steady State
R
thJA
130
_C/W
Notes
a. Surface Mounted on FR4 Board.
b. t v 5 sec.