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SI2306DS

Part # SI2306DS
Description Trans MOSFET N-CH 30V3.5A 3-Pin TO-236
Category TRANSISTOR
Availability Out of Stock
Qty 0
Qty Price
1 + $1.18319

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

FEATURES
D TrenchFETr Power MOSFET
D 100% R
g
Tested
Si2306DS
Vishay Siliconix
Document Number: 70827
S-31873—Rev. C, 15-Sep-03
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V) r
DS(on)
(W) I
D
(A)
30
0.057 @ V
GS
= 10 V 3.5
30
0.094 @ V
GS
= 4.5 V 2.8
-
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2306DS (A6)*
*Marking Code
Ordering Information: Si2306DS-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
"20
V
Continuous Drain Current (T
J
=
150
_
C)
a,
b
T
A
= 25_C
I
D
3.5
C
on
ti
nuous
D
ra
i
n
C
urren
t (T
J
=
150_C)
a
,
b
T
A
= 70_C
I
D
2.8
A
Pulsed Drain Current I
DM
16
A
Continuous Source Current (Diode Conduction)
a,
b
I
S
1.25
Maximum Power Dissipation
a,
b
T
A
= 25_C
P
D
1.25
W
Maximum Power Dissipation
a,
b
T
A
= 70_C
P
D
0.80
W
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction to Ambient
a
t v 5 sec
R
100
_C/W
Maximum Junction-to-Ambient
a
Steady State
R
thJA
130
_C/W
Notes
a. Surface Mounted on FR4 Board.
b. t v 5 sec.
Si2306DS
Vishay Siliconix
www.vishay.com
2
Document Number: 70827
S-31873—Rev. C, 15-Sep-03
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
DS
= 0 V, I
D
= 250 mA 30
V
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA 1
V
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V 0.5
mA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C 10
mA
On State Drain Current
a
I
D( )
V
DS
w 4.5 V, V
GS
= 10 V 6
A
On-State Drain Current
a
I
D(on)
V
DS
w 4.5 V, V
GS
= 4.5 V 4
A
Drain Source On State Resistance
a
r
V
GS
= 10 V, I
D
= 3.5 A 0.046 0.057
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 2.8 A
0.070 0.094
W
Forward Transconductance
a
g
fs
V
DS
= 4.5 V, I
D
= 3.5 A 6.9 S
Diode Forward Voltage
a
V
SD
I
S
= 1.25 A, V
GS
= 0 V 0.8 1.2 V
Dynamic
b
Gate Charge Q
g
V
DS
= 15 V, V
GS
= 5 V, I
D
= 3.5 A 4.2 7
Total Gate Charge Q
gt
8.5 20
nC
Gate-Source Charge Q
gs
V
DS
= 15 V, V
GS
= 10 V, I
D
= 3.5 A
1.9
n
C
Gate-Drain Charge Q
gd
1.35
Gate Resistance R
g
0.5 2.4 W
Input Capacitance C
iss
555
Output Capacitance C
oss
V
DS
= 15 V, V
GS
= 0 V, f= 1 MHz
120
pF
Reverse Transfer Capacitance C
rss
60
p
Switching
Turn-On Delay Time t
d(on)
9 20
Rise Time t
r
V
DD
= 15 V, R
L
= 15 W
7.5 18
ns
Turn-Off Delay Time t
d(off)
,
I
D
^ 1 A, V
GEN
= 10 V, R
G
= 6 W
17 35
ns
Fall Time t
f
5.2 12
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Si2306DS
Vishay Siliconix
Document Number: 70827
S-31873—Rev. C, 15-Sep-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
4
8
12
16
012345
0.0
0.1
0.2
0.3
0.4
0.5
0 4 8 12 16
0
4
8
12
16
0246810
0
2
4
6
8
10
0246810
0.6
0.8
1.0
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
800
0 6 12 18 24 30
V
GS
= 10 thru 5 V
25_C
T
C
= 125_C
C
rss
C
oss
C
iss
V
DS
= 15V
I
D
= 3.5 A
V
GS
= 10 V
I
D
= 3.5 A
V
GS
= 4.5 V
3 thru 1 V
-55_C
4 V
Output Characteristics Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
V
GS
- On-Resistance (r
DS(on)
W )
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (_C)
(Normalized)
- On-Resistance (r
DS(on)
W)
V
GS
= 10 V
12NEXT
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