International Rectifier JANS2N7237

Cross Number: 2N7237JANS

Item Description: TRANS MOSFET P-CH 200V 11A 3PIN TO-254AA - Bulk

Qty Price
1 - 1 $748.10287
2 - 2 $583.74694
3 - 3 $510.07014
4 - 4 $493.06780
5 + $442.06079



Other Cross Reference

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International Rectifier 9451
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International Rectifier 9451
  • Freelance Stock: 1
    Ships Immediately


International Rectifier 9451
  • Freelance Stock: 1
    Ships Immediately


International Rectifier 9451
  • Freelance Stock: 1
    Ships Immediately





Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Absolute Maximum Ratings
Parameter Units
I
D
@ V
GS
= -10V, T
C
= 25°C Continuous Drain Current -11
I
D
@ V
GS
= -10V, T
C
= 100°C Continuous Drain Current -7.0
I
DM
Pulsed Drain Current -44
P
D
@ T
C
= 25°C Max. Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy 500 mJ
I
AR
Avalanche Current -11 A
E
AR
Repetitive Avalanche Energy 12.5 mJ
dv/dt Peak Diode Recovery dv/dt -5.0
V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight 9.3 (typical) g
PD - 90497F
o
C
A
11/18/02
www.irf.com 1
TO-254AA
Product Summary
Part Number RDS(on) ID
IRFM9240 0.51 -11A
For footnotes refer to the last page
HEXFET
®
MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance. HEXFET tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
POWER MOSFET
THRU-HOLE (TO-254AA)
IRFM9240
JANTX2N7237
JANTXV2N7237
JANS2N7237
REF:MIL-PRF-19500/595
200V, P-CHANNEL
HEXFET
®
MOSFET TECHNOLOGY
IRFM9240
2 www.irf.com
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
Junction-to-Case 1.0
R
thCS
Case-to-sink 0.21
R
thJA
Junction-to-Ambient 48 Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
S
Continuous Source Current (Body Diode) -11
I
SM
Pulse Source Current (Body Diode) -44
V
SD
Diode Forward Voltage -4.6 V T
j
= 25°C, I
S
= -11A, V
GS
= 0V
t
rr
Reverse Recovery Time 440 nS T
j
= 25°C, I
F
= -11A, di/dt -100A/µs
Q
RR
Reverse Recovery Charge 7.2 µc V
DD
-50V
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
S
+ L
D
.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage -200 V V
GS
= 0V, I
D
= -1.0mA
BV
DSS
/T
J
Temperature Coefficient of Breakdown -0.2 V/°C Reference to 25°C, I
D
= -1.0mA
Voltage
R
DS(on)
Static Drain-to-Source On-State 0.51 V
GS
= -10V, I
D
= -7.0A
Resistance 0.52 V
GS
= -10V, I
D
= -11A
V
GS(th)
Gate Threshold Voltage -2.0 -4.0 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 4.0 S ( ) V
DS
> -15V, I
DS
= -7.0A
I
DSS
Zero Gate Voltage Drain Current -25 V
DS
= -160V, V
GS
= 0V
-250 V
DS
= -160V
V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Leakage Forward -100 V
GS
= -20V
I
GSS
Gate-to-Source Leakage Reverse 100 V
GS
=20V
Q
g
Total Gate Charge 60 V
GS
= -10V, ID
=
-11A
Q
gs
Gate-to-Source Charge 15 nC V
DS
= -100V
Q
gd
Gate-to-Drain (‘Miller’) Charge 38
t
d(on)
Turn-On Delay Time 35 V
DD
= -100V, I
D
= -11A,
t
r
Rise Time 85 R
G
=9.1Ω, V
GS
= -10V
t
d(off)
Turn-Off Delay Time 85
t
f
Fall Time 65
L
S +
L
D
Total Inductance 6.8
C
iss
Input Capacitance 1200 V
GS
= 0V, V
DS
= -25V
C
oss
Output Capacitance 570 pF f = 1.0MHz
C
rss
Reverse Transfer Capacitance 81
nA
nH
ns
µA
Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)
www.irf.com 3
IRFM9240
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
123NEXT

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