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JANS2N2222A

JANS2N2222A

Part #	JANS2N2222A
Description	Trans GP BJT NPN 50V 0.8A3-Pin TO-18
Category	TRANSISTOR
Availability	In Stock
Qty	884

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JANS2N2222A

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Technical Document

DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/255

T4-LDS-0060 Rev. 2 (100247) Page 1 of 6

DEVICES LEVELS

2N2221A 2N2222A JAN

2N2221AL 2N2222AL JANTX

2N2221AUA 2N2222AUA JANTXV

2N2221AUB 2N2222AUB JANS

2N2221AUBC * 2N2222AUBC *

* Available to JANS quality level only.

ABSOLUTE MAXIMUM RATINGS (T

C

= +25°C unless otherwise noted)

Parameters / Test Conditions Symbol Value Unit

Collector-Emitter Voltage V

CEO

50 Vdc

Collector-Base Voltage V

CBO

75 Vdc

Emitter-Base Voltage V

EBO

6.0 Vdc

Collector Current I

C

800 mAdc

Total Power Dissipation @ T

A

= +25°C P

T

0.5 W

Operating & Storage Junction Temperature Range T

op

, T

stg

-65 to +200 °C

THERMAL CHARACTERISTICS

Parameters / Test Conditions Symbol Max. Unit

Thermal Resistance, Junction-to-Ambient

2N2221A, L

2N2221AUA

2N2221AUB, UBC

2N2222A, L

2N2222AUA

2N2222AUB, UBC

R

θJA

325

210

325

°C/W

Note: Consult 19500/255 for thermal performance curves.

1. Derate linearly 3.08mW/°C above T

A

> +37.5°C

2. Derate linearly 4.76mW/°C above T

A

> +63.5°C

ELECTRICAL CHARACTERISTICS (T

A

= +25°C, unless otherwise noted)

Parameters / Test Conditions Symbol Min. Max. Unit

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

I

C

= 10mAdc

V

(BR)CEO

50

Vdc

Collector-Base Cutoff Current

V

CB

= 75Vdc

V

CB

= 60Vdc

I

CBO

10

10

μAdc

ηAdc

Emitter-Base Cutoff Current

V

EB

= 6.0Vdc

V

EB

= 4.0Vdc

I

EBO

10

10

μAdc

ηAdc

Collector-Emitter Cutoff Current

V

CE

= 50Vdc

I

CES

50

ηAdc

TO-18 (TO-206AA)

2N2221A, 2N2222A

4 PIN

2N2221AUA, 2N2222AUA

3 PIN

2N2221AUB, 2N2222AUB

2N2221AUBC, 2N2222AUBC

(UBC = Ceramic Lid Version)

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

T4-LDS-0060 Rev. 2 (100247) Page 2 of 6

ELECTRICAL CHARACTERISTICS (T

A

= +25°C, unless otherwise noted)

Parameters / Test Conditions Symbol Min. Max. Unit

ON CHARACTERISTICS

(2)

Forward-Current Transfer Ratio

I

C

= 0.1mAdc, V

CE

= 10Vdc 2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

30

50

I

C

= 1.0mAdc, V

CE

= 10Vdc 2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

35

75

150

325

I

C

= 10mAdc, V

CE

= 10Vdc 2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

40

100

I

C

= 150mAdc, V

CE

= 10Vdc 2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

40

100

120

300

I

C

= 500mAdc, V

CE

= 10Vdc 2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

h

FE

20

30

Collector-Emitter Saturation Voltage

I

C

= 150mAdc, I

B

= 15mAdc

I

C

= 500mAdc, I

B

= 50mAdc

V

CE(sat)

0.3

1.0

Vdc

Base-Emitter Voltage

I

C

= 150mAdc, I

B

= 15mAdc

I

C

= 500mAdc, I

B

= 50mAdc

V

BE(sat)

0.6

1.2

2.0

Vdc

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit

Small-Signal Short-Circuit Forward Current Transfer Ratio

I

C

= 1.0mAdc, V

CE

= 10Vdc, f = 1.0kHz 2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

h

fe

30

50

Magnitude of Small–Signal Short-Circuit

Forward Current Transfer Ratio

I

C

= 20mAdc, V

CE

= 20Vdc, f = 100MHz

|h

fe

|

2.5

Output Capacitance

V

CB

= 10Vdc, I

E

= 0, 100kHz ≤ f ≤ 1.0MHz

C

obo

8.0 pF

Input Capacitance

V

EB

= 0.5Vdc, I

C

= 0, 100kHz ≤ f ≤ 1.0MHz

C

ibo

25 pF

SWITCHING CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit

Turn-On Time

See figure 8 of MIL-PRF-19500/255

t

on

35

ηs

Turn-Off Time

See Figure 9 of MIL-PRF-19500/255

t

off

300

ηs

(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

T4-LDS-0060 Rev. 2 (100247) Page 3 of 6

PACKAGE DIMENSIONS

NOTES:

Dimensions

1. Dimensions are in inches. Symbol Inches Millimeters Note

2. Millimeters are given for general information only. Min Max Min Max

3. Beyond r (radius) maximum, TL shall be held for a minimum length CD .178 .195 4.52 4.95

of .011 inch (0.28 mm). CH .170 .210 4.32 5.33

4. Dimension TL measured from maximum HD. HD .209 .230 5.31 5.84

5. Body contour optional within zone defined by HD, CD, and Q. LC .100 TP 2.54 TP 6

6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) LD .016 .021 0.41 0.53 7,8

below seating plane shall be within .007 inch (0.18 mm) radius of LL .500 .750 12.70 19.05 7,8,13

true position (TP) at maximum material condition (MMC) relative to LU .016 .019 0.41 0.48 7,8

tab at MMC. L

1

.050 1.27 7,8

7. Dimension LU applies between L

1

and L

2

. Dimension LD applies L

2

.250 6.35 7,8

between L

2

and LL minimum. Diameter is uncontrolled in L

1

and P .100 2.54

beyond LL minimum. Q .030 0.76 5

8. All three leads. TL .028 .048 0.71 1.22 3,4

9. The collector shall be internally connected to the case. TW .036 .046 0.91 1.17 3

10. Dimension r (radius) applies to both inside corners of tab. r .010 0.25 10

11. In accordance with ASME Y14.5M, diameters are equivalent to φx

α

45° TP 45° TP

6

symbology. 1, 2, 9, 11, 12, 13

12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

13. For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min.

and 1.75 inches (44.45 mm) max.

FIGURE 1. Physical dimensions (similar to TO-18).

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