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JANS2N2222A

Part # JANS2N2222A
Description Trans GP BJT NPN 50V 0.8A3-Pin TO-18
Category TRANSISTOR
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
T4-LDS-0060 Rev. 2 (100247) Page 1 of 6
DEVICES LEVELS
2N2221A 2N2222A JAN
2N2221AL 2N2222AL JANTX
2N2221AUA 2N2222AUA JANTXV
2N2221AUB 2N2222AUB JANS
2N2221AUBC * 2N2222AUBC *
* Available to JANS quality level only.
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage V
CEO
50 Vdc
Collector-Base Voltage V
CBO
75 Vdc
Emitter-Base Voltage V
EBO
6.0 Vdc
Collector Current I
C
800 mAdc
Total Power Dissipation @ T
A
= +25°C P
T
0.5 W
Operating & Storage Junction Temperature Range T
op
, T
stg
-65 to +200 °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Max. Unit
Thermal Resistance, Junction-to-Ambient
2N2221A, L
2N2221AUA
2N2221AUB, UBC
2N2222A, L
2N2222AUA
2N2222AUB, UBC
R
θJA
325
210
325
°C/W
Note: Consult 19500/255 for thermal performance curves.
1. Derate linearly 3.08mW/°C above T
A
> +37.5°C
2. Derate linearly 4.76mW/°C above T
A
> +63.5°C
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
V
(BR)CEO
50
Vdc
Collector-Base Cutoff Current
V
CB
= 75Vdc
V
CB
= 60Vdc
I
CBO
10
10
μAdc
ηAdc
Emitter-Base Cutoff Current
V
EB
= 6.0Vdc
V
EB
= 4.0Vdc
I
EBO
10
10
μAdc
ηAdc
Collector-Emitter Cutoff Current
V
CE
= 50Vdc
I
CES
50
ηAdc
TO-18 (TO-206AA)
2N2221A, 2N2222A
4 PIN
2N2221AUA, 2N2222AUA
3 PIN
2N2221AUB, 2N2222AUB
2N2221AUBC, 2N2222AUBC
(UBC = Ceramic Lid Version)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
T4-LDS-0060 Rev. 2 (100247) Page 2 of 6
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 0.1mAdc, V
CE
= 10Vdc 2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
30
50
I
C
= 1.0mAdc, V
CE
= 10Vdc 2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
35
75
150
325
I
C
= 10mAdc, V
CE
= 10Vdc 2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
40
100
I
C
= 150mAdc, V
CE
= 10Vdc 2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
40
100
120
300
I
C
= 500mAdc, V
CE
= 10Vdc 2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
h
FE
20
30
Collector-Emitter Saturation Voltage
I
C
= 150mAdc, I
B
= 15mAdc
I
C
= 500mAdc, I
B
= 50mAdc
V
CE(sat)
0.3
1.0
Vdc
Base-Emitter Voltage
I
C
= 150mAdc, I
B
= 15mAdc
I
C
= 500mAdc, I
B
= 50mAdc
V
BE(sat)
0.6
1.2
2.0
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0mAdc, V
CE
= 10Vdc, f = 1.0kHz 2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
h
fe
30
50
Magnitude of Small–Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 20mAdc, V
CE
= 20Vdc, f = 100MHz
|h
fe
|
2.5
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 100kHz f 1.0MHz
C
obo
8.0 pF
Input Capacitance
V
EB
= 0.5Vdc, I
C
= 0, 100kHz f 1.0MHz
C
ibo
25 pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
See figure 8 of MIL-PRF-19500/255
t
on
35
ηs
Turn-Off Time
See Figure 9 of MIL-PRF-19500/255
t
off
300
ηs
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle 2.0%.
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
T4-LDS-0060 Rev. 2 (100247) Page 3 of 6
PACKAGE DIMENSIONS
NOTES:
Dimensions
1. Dimensions are in inches. Symbol Inches Millimeters Note
2. Millimeters are given for general information only. Min Max Min Max
3. Beyond r (radius) maximum, TL shall be held for a minimum length CD .178 .195 4.52 4.95
of .011 inch (0.28 mm). CH .170 .210 4.32 5.33
4. Dimension TL measured from maximum HD. HD .209 .230 5.31 5.84
5. Body contour optional within zone defined by HD, CD, and Q. LC .100 TP 2.54 TP 6
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) LD .016 .021 0.41 0.53 7,8
below seating plane shall be within .007 inch (0.18 mm) radius of LL .500 .750 12.70 19.05 7,8,13
true position (TP) at maximum material condition (MMC) relative to LU .016 .019 0.41 0.48 7,8
tab at MMC. L
1
.050 1.27 7,8
7. Dimension LU applies between L
1
and L
2
. Dimension LD applies L
2
.250 6.35 7,8
between L
2
and LL minimum. Diameter is uncontrolled in L
1
and P .100 2.54
beyond LL minimum. Q .030 0.76 5
8. All three leads. TL .028 .048 0.71 1.22 3,4
9. The collector shall be internally connected to the case. TW .036 .046 0.91 1.17 3
10. Dimension r (radius) applies to both inside corners of tab. r .010 0.25 10
11. In accordance with ASME Y14.5M, diameters are equivalent to φx
α
45° TP 45° TP
6
symbology. 1, 2, 9, 11, 12, 13
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
13. For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min.
and 1.75 inches (44.45 mm) max.
FIGURE 1. Physical dimensions (similar to TO-18).
12NEXT