TECHNICAL DATA
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
Devices Qualified Level
2N2484
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N2484 Unit
Collector-Emitter Voltage
V
CEO
60 Vdc
Collector-Base Voltage
V
CBO
60 Vdc
Emitter-Base Voltage
V
EBO
6.0 Vdc
Collector Current
I
C
50 mAdc
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
360
1.2
mW
W
Operating & Storage Junction Temperature Range
T
J
,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
146
0
C/W
1) Derate linearly 2.06 mW/
0
C above T
A
= +25
0
C
2) Derate linearly 6.85 mW/
0
C above T
C
= +25
0
C
TO- 18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 10 mAdc
V
(BR)
CEO
60 Vdc
Collector-Emitter Cutoff Current
V
CE
= 45 Vdc
I
CES
5.0
ηAdc
Collector-Base Cutoff Current
V
CB
= 45 Vdc
V
CB
= 60 Vdc
I
CBO
5.0
10
ηAdc
µAdc
Collector-Emitter Cutoff Current
V
CE
= 5.0 Vdc
I
CEO
2.0
ηAdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
V
EB
= 6.0 Vdc
I
EBO
2.0
10
ηAdc
µAdc
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