Motorola Corp JANS2N2484
Cross Number:
Item Description:
Trans GP BJT NPN 60V 0.05A 3-Pin TO-18 - Waffle Pack
- Category: TRANSISTOR
- Is Military Spec.: Yes
- Availability: In Stock
- Qty Available: 14
| Qty | Price |
|---|---|
| 1 - 1 | $139.45800 |
| 2 - 2 | $108.81950 |
| 3 - 5 | $95.08500 |
| 6 - 8 | $91.91550 |
| 9 + | $82.40700 |
Technical Document
DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.
TECHNICAL DATA
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
Devices Qualified Level
2N2484
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N2484 Unit
Collector-Emitter Voltage
V
CEO
60 Vdc
Collector-Base Voltage
V
CBO
60 Vdc
Emitter-Base Voltage
V
EBO
6.0 Vdc
Collector Current
I
C
50 mAdc
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
360
1.2
mW
W
Operating & Storage Junction Temperature Range
T
J
,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
146
0
C/W
1) Derate linearly 2.06 mW/
0
C above T
A
= +25
0
C
2) Derate linearly 6.85 mW/
0
C above T
C
= +25
0
C
TO- 18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 10 mAdc
V
(BR)
CEO
60 Vdc
Collector-Emitter Cutoff Current
V
CE
= 45 Vdc
I
CES
5.0
ηAdc
Collector-Base Cutoff Current
V
CB
= 45 Vdc
V
CB
= 60 Vdc
I
CBO
5.0
10
ηAdc
µAdc
Collector-Emitter Cutoff Current
V
CE
= 5.0 Vdc
I
CEO
2.0
ηAdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
V
EB
= 6.0 Vdc
I
EBO
2.0
10
ηAdc
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N2484 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
I
C
= 1.0 µAdc, V
CE
= 5.0 Vdc
I
C
= 10 µAdc, V
CE
= 5.0 Vdc
I
C
= 100 µAdc, V
CE
= 5.0 Vdc
I
C
= 500 µAdc, V
CE
= 5.0 Vdc
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc
I
C
= 10 mAdc, V
CE
= 5.0 Vdc
h
FE
45
200
225
250
250
225
500
675
800
800
800
Collector-Emitter Saturation Voltage
I
C
= 1.0 mAdc, I
B
= 100 µAdc
V
CE(sat)
0.3 Vdc
Base-Emitter Voltage
V
CE
= 5.0 Vdc, I
C
= 100 µAdc
V
BE
0.5 0.7 Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
C
= 50 µAdc, V
CE
= 5.0 Vdc, f = 5.0 MHz
I
C
= 500 µAdc, V
CE
= 5.0 Vdc, f = 30 MHz
h
fe
3.0
2.0
7.0
Open Circuit Output Admittance
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz
h
oe
40
µmhos
Open Circuit Reverse-Voltage Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz
h
re
8.0x10
-4
Input Impedance
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz
h
ie
3.5 24
kΩ
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz
h
fe
250 900
Output Capacitance
V
CB
= 5.0 Vdc, I
E
= 0, 100 kHz ≤ f ≤ 1.0 MHz
C
obo
5.0 pF
Input Capacitance
V
EB
= 0.5 Vdc, I
C
= 0, 100 kHz ≤ f ≤ 1.0 MHz
C
ibo
6.0 pF
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
