International Rectifier JANS2N6849

Cross Number:

Item Description: TRANS MOSFET P-CH 100V 6.5A 3PIN TO-39 - Rail/Tube

Qty Price
1 - 1 $31.68000
2 - 2 $24.72000
3 - 3 $22.80000
4 + $20.88000



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International Rectifier
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Absolute Maximum Ratings
Parameter Units
I
D
@ V
GS
= -10V, T
C
= 25°C Continuous Drain Current -6.5
I
D
@ V
GS
= -10V, T
C
= 100°C Continuous Drain Current -4.1
I
DM
Pulsed Drain Current -25
P
D
@ T
C
= 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.20 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy 92 mJ
I
AR
Avalanche Current —A
E
AR
Repetitive Avalanche Energy —mJ
dv/dt Peak Diode Recovery dv/dt -5.5
V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 0.98(typical) g
PD - 90550D
The HEXFET
technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
o
C
A
04/20/01
www.irf.com 1
TO-39
Product Summary
Part Number BVDSS RDS(on) ID
IRFF9130 -100V 0.30 -6.5A
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
For footnotes refer to the last page
JANTX2N6849
REPETITIVE AVALANCHE AND dv/dt RATED
JANTXV2N6849
HEXFET
TRANSISTORS JANS2N6849
THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564
100V, P-CHANNEL
IRFF9130
IRFF9130
2 www.irf.com
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
Junction-to-Case 5.0
R
thJA
Junction-to-Ambient 175 Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
S
Continuous Source Current (Body Diode) -6.5
I
SM
Pulse Source Current (Body Diode) -25
V
SD
Diode Forward Voltage -4.7 V T
j
= 25°C, I
S
=-6.5A, V
GS
= 0V
t
rr
Reverse Recovery Time 250 nS T
j
= 25°C, I
F
= -6.5A, di/dt -100A/µs
Q
RR
Reverse Recovery Charge 3.0 µC V
DD
-50V
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
S
+ L
D
.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage -100 V V
GS
= 0V, I
D
= -1.0mA
BV
DSS
/T
J
Temperature Coefficient of Breakdown -0.10 V/°C Reference to 25°C, I
D
= -1.0mA
Voltage
R
DS(on)
Static Drain-to-Source On-State 0.30 V
GS
= -10V, I
D
= -4.1A
Resistance 0.345 V
GS
=-10V, I
D
=-6.5A
V
GS(th)
Gate Threshold Voltage -2.0 -4.0 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 2.5 S ( ) V
DS
> -15V, I
DS
= -4.1A
I
DSS
Zero Gate Voltage Drain Current -25 V
DS
= -80V, V
GS
=0V
-250 µA V
DS
= -80V
V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Leakage Forward -100 V
GS
= -20V
I
GSS
Gate-to-Source Leakage Reverse 100 nA V
GS
= 20V
Q
g
Total Gate Charge 14.7 34.8 V
GS
=-10V, ID = -6.5A
Q
gs
Gate-to-Source Charge 1.0 7.1 nC V
DS
= -50V
Q
gd
Gate-to-Drain (‘Miller’) Charge 2.0 21
t
d(on)
Turn-On Delay Time 60 V
DD
= -50V, I
D
= -6.5A,
t
r
Rise Time 140 V
GS
=-10V,R
G
=7.5
t
d(off)
Turn-Off Delay Time 140
t
f
Fall Time 140
L
S +
L
D
Total Inductance 7.0
C
iss
Input Capacitance 800 V
GS
= 0V, V
DS
= -25V
C
oss
Output Capacitance 350 pF f = 1.0MHz
C
rss
Reverse Transfer Capacitance 125
nH
ns
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
www.irf.com 3
IRFF9130
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
123NEXT

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