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JANS2N3867

Part # JANS2N3867
Description Trans GP BJT PNP 40V 0.03A 1000mW 3-Pin TO-5 Tray
Category TRANSISTOR
Availability In Stock
Qty 10
Qty Price
1 - 2 $47.52000
3 - 4 $37.80000
5 - 6 $35.64000
7 - 8 $33.12000
9 + $29.52000
Manufacturer Available Qty
PPC
Date Code: 9714
  • Shipping Freelance Stock: 8
    Ships Immediately
PPC
Date Code: 8946
  • Shipping Freelance Stock: 2
    Ships Immediately

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/350
T4-LDS-0170 Rev. 1 (101121) Page 1 of 4
DEVICES LEVELS
2N3867 2N3867S
JAN
2N3868 2N3868S
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N3867 2N3868 Unit
Collector-Base Voltage V
CBO
40 60 Vdc
Collector-Emitter Voltage V
CEO
40 60 Vdc
Emitter-Base Voltage V
EBO
4.0 Vdc
Collector Current I
C
3.0 mAdc
Total Power Dissipation @ T
A
= +25°C
(1)
P
T
1.0 W/°C
Operating & Storage Junction Temperature Range T
J
, T
stg
-65 to +200 °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Max. Unit
Thermal Resistance, Junction-to-Ambient
R
θJA
175 °C/mW
Note: * Electrical characteristics for “S” suffix devices are identical to the “non S”
corresponding devices.
1/ Derate linearly 5.71mW/°C for T
A
> +25°C
2/ Derate linearly 57.1mW/°C for T
C
> +25°C
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Current
V
(BR)CEO
Vdc
I
C
= 10μAdc
2N3867, S
2N3868, S
40
60
Collector-Base Cutoff Current
V
CB
= 40Vdc
V
CB
= 60Vdc
2N3867, S
2N3868, S
I
CBO
100 µAdc
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc
I
EBO
100 µAdc
Collector-Emitter Cutoff Current
V
CE
= 40Vdc
V
CE
= 60Vdc
V
CE
= 40Vdc, T
A
= +150°C
V
CE
= 60Vdc, T
A
= +150°C
2N3867, S
2N3868, S
2N3867, S
2N3868, S
I
CEX
1.0
1.0
50
50
µAdc
TO-5 *
2N3867, 2N3868
TO-39 * (TP-205AD)
2N3867S, 2N3868S
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0170 Rev. 1 (101121) Page 2 of 4
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERTICS
(2)
Forward-Current Transfer Ratio
h
FE
I
C
= 500mAdc, V
CE
= 1.0Vdc 2N3867, S
2N3868, S
50
35
I
C
= 1.5Adc, V
CE
= 2.0Vdc 2N3867, S
2N3868, S
40
30
200
150
I
C
= 2.5Adc, V
CE
= 3.0Vdc 2N3867, S
2N3868, S
25
20
I
C
= 3.0Adc, V
CE
= 5.0Vdc 2N3867, S
2N3868, S
20
20
I
C
= 500mAdc, V
CE
= 1.0Vdc, T
A
= -55°C 2N3867, S
2N3868, S
25
17
Collector-Emitter Saturation Voltage
V
CE(sat)
Vdc
I
C
= 500mAdc, I
B
= 50mAdc
I
C
= 1.5Adc, I
B
= 150mAdc
I
C
= 2.5Adc, I
B
= 250mAdc
0.5
0.75
1.5
Base-Emitter Saturation Voltage
V
BE(sat)
Vdc
I
C
= 500mA, I
B
= 50mAdc
1.0
I
C
= 1.5A, I
B
= 150mAdc
2N3867, S
2N3868, S
0.9
0.85
1.4
1.4
I
C
= 2.5A, I
B
= 250mAdc 2.0
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
|h
fe
| 3 12 kΩ
I
C
= 100mAdc, V
CE
= 5.0Vdc, f = 20MHz
Output Capacitance
C
obo
pF
V
CB
= 10Vdc, I
E
= 0, 100 kHz ≤ f ≤ 1.0MHz
120
Iutput Capacitance
C
ibo
pF
V
EB
= 3.0Vdc, I
C
= 0, 100 kHz ≤ f ≤ 1.0MHz
800
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0170 Rev. 1 (101121) Page 3 of 4
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Delay Time
Rise Time
V
CC
= -30dc, V
EB
= 0
I
C
= 1.5Adc, I
B1
= 150mAdc
t
d
t
r
35
65
nS
Storage Time
Fall Time
V
CC
= -30dc, V
EB
= 0
I
C
= 1.5Adc, I
B1
= I
B2
= 150mAdc
t
s
t
f
500
100
nS
Turn-On Time
V
CC
= 30, I
C
= 1.5Adc, I
B
= 150mA
t
on 100 nS
Turn-Off Time
V
CC
= 30, I
C
= 1.5Adc, I
B
= 150mA
t
off 600 nS
SAFE OPERATING AREA
DC Test
T
C
= 25°C, 1 cycle, t = 1.0s
Test 1
V
CE
= 3.33Vdc, I
C
= 3.0Adc
Test 2
V
CE
= 40Vdc, I
C
= 160mAdc
V
CE
= 60Vdc, I
C
= 80mAdc
2N3867,
2N3868, S
12NEXT
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