Philips Semiconductors Product specification
PowerMOS transistors IRFP460
Avalanche energy rated
FEATURES SYMBOL QUICK REFERENCE DATA
• Repetitive Avalanche Rated
• Fast switching V
DSS
= 500 V
• Stable off-state characteristics
• High thermal cycling performance I
D
= 20 A
• Low thermal resistance
R
DS(ON)
≤ 0.27 Ω
GENERAL DESCRIPTION PINNING SOT429 (TO247)
N-channel, enhancement mode PIN DESCRIPTION
field-effect power transistor,
intended for use in off-line switched 1 gate
mode power supplies, T.V. and
computer monitor power supplies, 2 drain
d.c.tod.c. converters,motorcontrol
circuits and general purpose 3 source
switching applications.
tab drain
The IRFP460 is supplied in the
SOT429 (TO247) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
Drain-source voltage T
j
= 25 ˚C to 150˚C - 500 V
V
DGR
Drain-gate voltage T
j
= 25 ˚C to 150˚C; R
GS
= 20 kΩ - 500 V
V
GS
Gate-source voltage - ± 30 V
I
D
Continuous drain current T
mb
= 25 ˚C; V
GS
= 10 V - 20 A
T
mb
= 100 ˚C; V
GS
= 10 V - 12.4 A
I
DM
Pulsed drain current T
mb
= 25 ˚C - 80 A
P
D
Total dissipation T
mb
= 25 ˚C - 250 W
T
j
, T
stg
Operating junction and - 55 150 ˚C
storage temperature range
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
AS
Non-repetitive avalanche Unclamped inductive load, I
AS
= 20 A; - 1300 mJ
energy t
p
= 0.2 ms; T
j
prior to avalanche = 25˚C;
V
DD
≤ 50 V; R
GS
= 50 Ω; V
GS
= 10 V
E
AR
Repetitive avalanche energy
1
I
AR
= 20 A; t
p
= 2.5 µs; T
j
prior to - 32 mJ
avalanche = 25˚C; R
GS
= 50 Ω; V
GS
= 10 V
I
AS
, I
AR
Repetitive and non-repetitive - 20 A
avalanche current
d
g
s
2
3
1
1 pulse width and repetition rate limited by T
j
max.
September 1999 1 Rev 1.000
