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IRFP440

Part # IRFP440
Description TRANS MOSFET N-CH 500V 8.8A 3PIN TO-247AC - Bulk
Category Microcircuit
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International Rectifier
Date Code: 9400
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

4-347
File Number
2089.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
IRFP440
8.8A, 500V, 0.850 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17425.
Features
8.8A, 500V
•r
DS(ON)
= 0.850
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER PACKAGE BRAND
IRFP440 TO-247 IRFP440
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
Data Sheet July 1999
4-348
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specified
IRFP440 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
500 V
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
500 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
8.8 A
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
5.6 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
35 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
150 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
480 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
V
GS
= 0V, I
D
= 250µA (Figure 10) 500 - - V
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250µA 2.0 - 4.0 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V - - 25 µA
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C - - 250 µA
On-State Drain Current (Note 2) I
D(ON)
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V 8.8 - - A
Gate to Source Leakage I
GSS
V
GS
= ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) r
DS(ON)
V
GS
= 10V, I
D
= 4.9A (Figures 8, 9) - 0.800 0.850
Forward Transconductance (Note 2) g
fs
V
DS
50V, I
D
= 4.9A (Figure 12) 5.3 8.2 - S
Turn-On Delay Time t
d(ON)
V
DD
= 250V, I
D
8A, R
GS
= 9.1, R
L
= 30.1
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-1721 ns
Rise Time t
r
-2335 ns
Turn-Off Delay Time t
d(OFF)
-4274 ns
Fall Time t
f
-1830 ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g
V
GS
= 10V, I
D
= 8A, V
DS
= 0.8 x Rated BV
DSS
I
g(REF)
= 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating Temperature
-4263nC
Gate to Source Charge Q
gs
-7 - nC
Gate to Drain “Miller” Charge Q
gd
-22 - nC
Input Capacitance C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 11) - 1225 - pF
Output Capacitance C
OSS
- 200 - pF
Reverse-Transfer Capacitance C
RSS
-85 - pF
Internal Drain Inductance L
D
Measured from the drain
Lead, 6mm (0.25in) from
the Package to the
Center of the Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 5.0 - nH
Internal Source Inductance L
S
Measured from the
Source Lead, 6mm
(0.25in) from Header to
the Source Bonding Pad
- 12.5 - nH
Junction to Case R
θJC
- - 0.83 oC/W
Junction to Ambient R
θJA
Free Air Operation - - 30 oC/W
L
S
L
D
G
D
S
IRFP440
4-349
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
- - 8.8 A
Pulse Source to Drain Current
(Note 3)
I
SDM
- - 35 A
Source to Drain Diode Voltage (Note 2) V
SD
T
J
= 25
o
C, I
SD
= 8.8A, V
GS
= 0V (Figure 13) - - 1.8 V
Reverse Recovery Time t
rr
T
J
= 25
o
C, I
SD
= 8.0A, dI
SD
/dt = 100A/µs 210 460 970 ns
Reverse Recovered Charge Q
RR
T
J
= 25
o
C, I
SD
= 8.0A, dI
SD
/dt = 100A/µs 2 4.2 8.9 µC
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 11mH, R
G
= 50, peak I
AS
= 8.8A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0 50 100 150
0
T
C
, CASE TEMPERATURE (
o
C)
POWER DISSIPATION MULTIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
T
C
, CASE TEMPERATURE (
o
C)
50 75 10025 150
10
8
6
0
4
I
D,
DRAIN CURRENT (A)
2
125
1
0.1
10
-2
10
-2
10
-5
10
-4
10
-3
0.1 1 10
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
DUTY FACTOR: D = t
1
/t
2
t
2
P
DM
t
1
NOTES:
t
2
PEAK T
J
= P
DM
x Z
θJC
+ T
C
SINGLE PULSE
Z
θJC
, THERMAL IMPEDANCE
0.5
0.1
0.2
0.05
0.02
0.01
IRFP440
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