IRFP460N
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 20 40 60 80 100 120 140
0
4
8
12
16
20
Q , Total Gate Char
e (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
20A
V = 100V
DS
V = 250V
DS
V = 400V
DS
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V ,Source-to-Drain Volta
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
10 100 1000 10000
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
I
D
, Drain-to-Source Current (A)
T
A
= 25°C
T
J
= 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
