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MBRM140T1G

Part # MBRM140T1G
Description REC PWMITE 1A 40V SHTKY - Tape and
Category DIODE
Availability Out of Stock
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Qty Price
1 + $0.10840

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 3
1 Publication Order Number:
MBRM140/D
MBRM140
Surface Mount
Schottky Power Rectifier
POWERMITE
®
Power Surface Mount Package
The Schottky Powermite
®
employs the Schottky Barrier principle
with a barrier metal and epitaxial construction that produces optimal
forward voltage drop−reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the Powermite
®
has the same thermal performance as the SMA while
being 50% smaller in footprint area, and delivering one of the lowest
height profiles, < 1.1 mm in the industry. Because of its small size, it is
ideal for use in portable and battery powered products such as cellular
and cordless phones, chargers, notebook computers, printers, PDAs
and PCMCIA cards. Typical applications are AC−DC and DC−DC
converters, reverse battery protection, and “ORing” of multiple supply
voltages and any other application where performance and size are
critical.
Features
• Low Profile − Maximum Height of 1.1 mm
• Small Footprint − Footprint Area of 8.45 mm
2
• Low V
F
Provides Higher Efficiency and Extends Battery Life
• Supplied in 12 mm Tape and Reel
• Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
• Pb−Free Packages are Available
Mechanical Characteristics:
• Powermite
®
is JEDEC Registered as D0−216AA
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 16.3 mg (Approximately)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
ORDERING INFORMATION
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 40 VOLTS
http://onsemi.com
Device Package Shipping
†
MBRM140T1 POWERMITE 3000/Tape & Ree
l
MBRM140T3 POWERMITE 12000/Tape & Ree
l
MBRM140T1G POWERMITE
(Pb−Free)
3000/Tape & Ree
l
MBRM140T3G POWERMITE
(Pb−Free)
12000/Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
POWERMITE
CASE 457
PLASTIC
CATHODE
ANODE
MARKING DIAGRAM
M
BCJ
M = Date Code
BCJ = Device Code
G = Pb−Free Package
G
MBRM140
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40 V
Average Rectified Forward Current (At Rated V
R
, T
C
= 110°C) I
O
1.0 A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 100 kHz, T
C
= 110°C)
I
FRM
2.0 A
Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current,
halfwave, single phase, 60 Hz)
I
FSM
50 A
Storage Temperature T
stg
−55 to 150 °C
Operating Junction Temperature T
J
−55 to 125 °C
Voltage Rate of Change (Rated V
R
, T
J
= 25°C) dv/dt 10,000
V/ms
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Anode) (Note 1)
Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
R
tjl
R
tjtab
R
tja
35
23
277
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10
ELECTRICAL CHARACTERISTICS
Rating Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
V
F
T
J
= 25°C T
J
= 85°C
V
(I
F
= 0.1 A)
(I
F
= 1.0 A)
(I
F
= 3.0 A)
0.36
0.55
0.85
0.30
0.515
0.88
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
I
R
T
J
= 25°C T
J
= 85°C
mA
(V
R
= 40 V)
(V
R
= 20 V)
0.5
0.15
25
18
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS
)
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
0.1
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
0.1
0.70.3 0.5 0.9
T
J
= 85°C
T
J
= 125°C
T
J
= −40°C
T
J
= 25°C
100
0.1
10
1.0
0.1
0.70.3 0.5 0.
9
T
J
= 85°C
T
J
= 125°C
T
J
= 25°C
MBRM140
http://onsemi.com
3
I
R
, MAXIMUM REVERSE CURRENT (AMPS
)
I
R
, REVERSE CURRENT (AMPS)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
400
V
R
, REVERSE VOLTAGE (VOLTS)
10E−3
1.0E−3
100E−6
10E−6
1.0E−6
V
R
, REVERSE VOLTAGE (VOLTS)
10 20 30 4
0
0
100E−6
10E−6
10 20 30
T
J
= 85°C
T
J
= 25°C
T
J
= 85°C
T
J
= 25°C
100E−3
10E−3
1.0E−3
P
FO
, AVERAGE POWER DISSIPATION (WATTS)
I
O
, AVERAGE FORWARD CURRENT (AMPS)
I
pk
/I
o
= 5
Figure 5. Current Derating Figure 6. Forward Power Dissipation
T
L
, LEAD TEMPERATURE (°C) I
O
, AVERAGE FORWARD CURRENT (AMPS)
0.20
1.0
0.6
0.5
0.3
0.1
0
1.00.4 0.8 1.2 1.6
0.4
SQUARE
WAVE
dc
I
pk
/I
o
= p
I
pk
/I
o
= 10
I
pk
/I
o
= 20
0.6 1.4
0.2
0.7
0.8
0.9
45 7525
1.8
1.2
1.0
0.8
0.2
0
55 115105
1.4
125
1.6
I
pk
/I
o
= 20
I
pk
/I
o
= 10
I
pk
/I
o
= 5
I
pk
/I
o
= p
SQUARE WAVE
dc
0.6
0.4
FREQ = 20 kHz
35 65 85 95
T
J
, DERATED OPERATING TEMPERATURE (_C)
C, CAPACITANCE (pF)
Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating*
300
V
R
, REVERSE VOLTAGE (VOLTS)
1000
100
10
V
R
, DC REVERSE VOLTAGE (VOLTS)
15 400
115
95
85
75
155.0 10 20 25 20 255.0 10
105
125
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
J
therefore must include forward and reverse power effects. The allowable operating
T
J
may be calculated from the equation: T
J
= T
Jmax
− r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T
J
due to reverse bias under DC conditions only and is calculated as T
J
= T
Jmax
− r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
R
tja
= 33.72°C/W
51°C/W
83.53°C/W
96°C/W
T
J
= 25°C
4035 30 35
69°C/W
12NEXT
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