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GRM32ER60J107ME20L

Part # GRM32ER60J107ME20L
Description CAP 100UF 6.3VDC X5R 20% SMD1210 - Cut TR (SOS)
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

User's Guide
SLUU526August 2011
Using the TPS51916EVM-746 Complete DDR2, DDR3,
DDR3L, and DDR4 Memory Power Solution Synchronous
Buck Controller, 2-A LDO, Buffered Reference
The TPS51916EVM-746 evaluation module (EVM) allows users to evaluate the performance of the
TPS51916 low-dropout (LDO) regulator. The TPS51916 provides a complete power supply for DDR2,
DDR3, DDR3L, and DDR4 memory system in the lowest total cost and minimum space. TPS51916
integrates a synchronous buck controller (VDDQ) with a 2-A sink/source tracking LDO (VTT) and buffered,
low-noise reference (VTTREF).
Contents
1 Description ................................................................................................................... 3
1.1 Typical Applications ................................................................................................ 3
1.2 Features ............................................................................................................. 3
2 Electrical Performance Specifications .................................................................................... 3
3 Schematic .................................................................................................................... 5
4 Test Setup ................................................................................................................... 6
4.1 Test Equipment ..................................................................................................... 6
4.2 Recommended Test Setup ....................................................................................... 7
5 Configurations ............................................................................................................... 8
5.1 S3, S5 Enable Selection .......................................................................................... 8
6 Test Procedure .............................................................................................................. 8
6.1 Line/Load Regulation and Efficiency Measurement Procedure .............................................. 8
6.2 List of Test Points .................................................................................................. 8
6.3 Equipment Shutdown .............................................................................................. 9
7 Performance Data and Typical Characteristic Curves ................................................................. 9
7.1 DDR3 VDDQ Efficiency ........................................................................................... 9
7.2 DDR3 VDDQ Load Regulation .................................................................................. 10
7.3 DDR3 VDDQ Line Regulation .................................................................................. 10
7.4 DDR3 VTT Load Regulation .................................................................................... 11
7.5 DDR3 VTTREF Load Regulation ............................................................................... 11
7.6 DDR3 VTT Dropout Voltage .................................................................................... 12
7.7 DDR3 S5 Enable Turnon/Turnoff ............................................................................... 12
7.8 S5 Enable Turnon with 1-V Prebias at VDDQ ................................................................ 13
7.9 DDR3 S3 Enable Turnon/ Turnoff (S5 is ON) ................................................................ 13
7.10 DDR3 VDDQ Output Ripple ..................................................................................... 14
7.11 DDR3 VDDQ Switching Node .................................................................................. 14
7.12 DDR3 VDDQ Output Transient ................................................................................. 15
7.13 DDR3 VTT Transient With 1.5-A Sinking and Sourcing Current ........................................... 15
7.14 Thermal Image .................................................................................................... 16
7.15 DDR3 VDDQ Bode Plot ......................................................................................... 16
7.16 DDR3 VTT Bode Plot ............................................................................................ 17
8 EVM Assembly Drawing and PCB Layout ............................................................................. 17
9 Bill of Materials ............................................................................................................. 21
List of Figures
D-CAP2 is a trademark of Texas Instruments.
1
SLUU526August 2011 Using the TPS51916EVM-746 Complete DDR2, DDR3, DDR3L, and DDR4
Memory Power Solution Synchronous Buck Controller, 2-A LDO, Buffered
Submit Documentation Feedback
Copyright © 2011, Texas Instruments Incorporated
Reference
www.ti.com
1 TPS51916EVM-746 Schematic ........................................................................................... 5
2 Tip and Barrel Measurement for VDDQ Output Ripple ................................................................ 6
3 TPS51916EVM-746 Recommended Test Setup ....................................................................... 7
4 DDR3 VDDQ Efficiency .................................................................................................... 9
5 DDR3 VDDQ Load Regulation .......................................................................................... 10
6 DDR3 VDDQ Line Regulation ........................................................................................... 10
7 DDR3 VTT Load Regulation ............................................................................................. 11
8 DDR3 VTTREF Load Regulation........................................................................................ 11
9 DDR3 VTT Dropout Voltage ............................................................................................. 12
10 DDR3 S5 Enable Turnon ................................................................................................. 12
11 DDR3 S5 Enable Turnoff ................................................................................................. 12
12 DDR3 S5 Enable Turnon With 1-V Prebias at VDDQ ................................................................ 13
13 DDR3 S3 Enable Turnon ................................................................................................. 13
14 DDR3 S3 Enable Turnoff ................................................................................................. 13
15 DDR3 VDDQ Output Ripple ............................................................................................. 14
16 DDR3 VDDQ Switching Node ........................................................................................... 14
17 VDDQ Output Transient From DCM to CCM ......................................................................... 15
18 VDDQ Output Transient From CCM to DCM ......................................................................... 15
19 DDR3 VTT Transient With 1.5-A Sinking and Sourcing Current.................................................... 15
20 Top Board at 12 Vin, 1.5 VDDQ/20 A, No Load at VTT, 25°C Ambient Without Airflow ........................ 16
21 DDR3 VDDQ Bode Plot at 12 Vin, 1.5 VDDQ/10 A................................................................... 16
22 DDR3 VTT Bode Plot at 12 Vin, 1.5 VDDQ/0 A and VTT 1-A Sourcing ........................................... 17
23 TPS51916EVM-746 Top Layer Assembly Drawing................................................................... 17
24 TPS51916EVM-746 Bottom Assembly Drawing ...................................................................... 18
25 TPS51916EVM-746 Top Copper ....................................................................................... 18
26 TPS51916EVM-746 Layer-2 Copper ................................................................................... 19
27 TPS51916EVM-746 Layer-3 Copper ................................................................................... 19
28 TPS51916EVM-746 Bottom Copper ................................................................................... 20
List of Tables
1 TPS51916EVM-746 Electrical Performance Specifications ........................................................... 3
2 S3, S5 Enable Selection ................................................................................................... 8
3 Test Point Functions........................................................................................................ 8
4 TPS51916EVM-746 Bill of Materials.................................................................................... 21
2
Using the TPS51916EVM-746 Complete DDR2, DDR3, DDR3L, and DDR4 SLUU526 August 2011
Memory Power Solution Synchronous Buck Controller, 2-A LDO, Buffered
Submit Documentation Feedback
Copyright © 2011, Texas Instruments Incorporated
Reference
www.ti.com
Description
1 Description
The TPS51916EVM-746 is designed to use a regulated 12-V bus to produce a regulated 1.5-VDDQ output
at up to a 20-A load current. The TPS51916EVM-746 demonstrates TPS51916 in a typical DDR3
application with D-CAP2-mode operation. The EVM also provides test points to evaluate the
performance of the TPS51916.
1.1 Typical Applications
DDR2/DDR2/DDR3L/DDR4 memory power supplies
SSTL_18, SSTL_15, SSTL_135, and HSTL termination
1.2 Features
The TPS51916EVM-746 features:
D-CAP2-mode operation with all-ceramic VDDQ output capacitor
20-Adc steady-state VDDQ output current
Support VDDQ prebias start-up
SW1 and SW2 provides S3, S5 power control
Optional external VLDOIN voltage for efficiency and flexible operation
Convenient test points for probing critical waveforms
2 Electrical Performance Specifications
Table 1. TPS51916EVM-746 Electrical Performance Specifications
Parameter Test Conditions Min Typ Max Units
Input Characteristics
Voltage range VIN 8 12 20 V
V5IN 4.5 5 5.5
Maximum input current VIN = 8 V, I
VDDQ
= 20 A 4.21 A
No-load input current Vin = 20 V, I
VDDQ
= 0 A 0.1 mA
VDDQ Output
DDR3 (Default setting), R15 = 47.5k, R16 = 2k 1.5 V
DDR2, R15 = R16= Open 1.8 V
VDDQ Output voltage
(VDDQSNS)
DDR3L, R15 = 28k, R16 = 2k 1.35 V
DDR4, R15 = 18.2k, R16 = 2k 1.2 V
VDDQ Output voltage regulation Line regulation (Vin = 8 V20 V) 0.2%
Load regulation (Vin = 12 V, I
VDDQ
= 0 A20 A) 0.5%
Output voltage ripple Vin = 12 V, I
VDDQ
= 20 A 20 mVpp
Output load current 0 20 A
Output overcurrent 30 A
Switching frequency 500 kHz
Peak efficiency Vin = 12 V, 1.5 VDDQ/8 A 90.93%
Full-load efficiency Vin = 12 V, 1.5 VDDQ/20 A 87.3%
VTT Output
VTT output voltage VTTREF V
For DDR2(0.9 VTT) and DDR3(0.75 VTT) 2 2 A
VTT output current
For DDR3L(0.675 VTT) and DDR4(0.6 VTT) 1.5 1.5 A
|I
VTT
| < 2 A, 1.4 V V
VDDQSNS
1.8 V 40 40 mV
VTT output tolerance to VTTREF
|I
VTT
| < 1.5 A, 1.2 V V
VDDQSNS
< 1.4 V 40 40 mV
VTTREF Output
VTTREF output voltage VDDQSNS/2 V
VTTREF output current 10 10 mA
3
SLUU526August 2011 Using the TPS51916EVM-746 Complete DDR2, DDR3, DDR3L, and DDR4
Memory Power Solution Synchronous Buck Controller, 2-A LDO, Buffered
Submit Documentation Feedback
Reference
Copyright © 2011, Texas Instruments Incorporated
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