
Absolute Maximum Ratings
Parameter Units
I
D
@ V
GS
= -12V, T
C
= 25°C Continuous Drain Current -6.5
I
D
@ V
GS
= -12V, T
C
= 100°C Continuous Drain Current -4.1
I
DM
Pulsed Drain Current ➀ -26
P
D
@ T
C
= 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.2 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy ➁ 165 mJ
I
AR
Avalanche Current ➀ -6.5 A
E
AR
Repetitive Avalanche Energy ➀ 2.5 mJ
dv/dt Peak Diode Recovery dv/dt ➂ -22
V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature 300 ( 0.063 in. (1.6mm) from case for 10s)
Weight 0.98 (typical) g
PD - 90882F
Pre-Irradiation
International Rectifier’s RAD-Hard HEXFET
TM
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
o
C
A
2/18/03
www.irf.com 1
TO-39
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHF9130 100K Rads (Si) 0.30Ω -6.5A JANSR2N7389
IRHF93130 300K Rads (Si) 0.30Ω -6.5A JANSF2N7389
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
For footnotes refer to the last page
IRHF9130
JANSR2N7389
RADIATION HARDENED 100V, P-CHANNEL
POWER MOSFET REF: MIL-PRF-19500/630
THRU-HOLE (TO-39)
RAD-Hard
™
HEXFET
®
TECHNOLOGY