International Rectifier JANSF2N7389
Cross Number:
Item Description:
Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39 - Rail/Tube (Alt:
- Category: TRANSISTOR
- Is Military Spec.: Yes
- Availability: In Stock
- Qty Available: 12
| Qty | Price |
|---|---|
| 1 - 1 | $350.32800 |
| 2 - 2 | $273.36200 |
| 3 - 4 | $238.86000 |
| 5 - 8 | $230.89800 |
| 9 + | $207.01200 |
Technical Document
DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.
Absolute Maximum Ratings
Parameter Units
I
D
@ V
GS
= -12V, T
C
= 25°C Continuous Drain Current -6.5
I
D
@ V
GS
= -12V, T
C
= 100°C Continuous Drain Current -4.1
I
DM
Pulsed Drain Current ➀ -26
P
D
@ T
C
= 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.2 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy ➁ 165 mJ
I
AR
Avalanche Current ➀ -6.5 A
E
AR
Repetitive Avalanche Energy ➀ 2.5 mJ
dv/dt Peak Diode Recovery dv/dt ➂ -22
V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature 300 ( 0.063 in. (1.6mm) from case for 10s)
Weight 0.98 (typical) g
PD - 90882F
Pre-Irradiation
International Rectifier’s RAD-Hard HEXFET
TM
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
o
C
A
2/18/03
www.irf.com 1
TO-39
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHF9130 100K Rads (Si) 0.30Ω -6.5A JANSR2N7389
IRHF93130 300K Rads (Si) 0.30Ω -6.5A JANSF2N7389
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
For footnotes refer to the last page
IRHF9130
JANSR2N7389
RADIATION HARDENED 100V, P-CHANNEL
POWER MOSFET REF: MIL-PRF-19500/630
THRU-HOLE (TO-39)
RAD-Hard
™
HEXFET
®
TECHNOLOGY
IRHF9130 Pre-Irradiation
2 www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage -100 — — V V
GS
= 0V, I
D
=-1.0mA
∆BV
DSS
/∆T
J
Temperature Coefficient of Breakdown — -0.112 — V/°C Reference to 25°C, I
D
= -1.0mA
Voltage
R
DS(on)
Static Drain-to-Source On-State — — 0.30 V
GS
= -12V, I
D
= -4.1A➃
Resistance — — 0.35
Ω
V
GS
= -12V, I
D
= -6.5A➃
V
GS(th)
Gate Threshold Voltage -2.0 — -4.0 V V
DS
= V
GS
, I
D
= -1.0mA
g
fs
Forward Transconductance 2.5 — — S ( ) V
DS
>-15V, I
DS
= -4.1A ➃
I
DSS
Zero Gate Voltage Drain Current — — -25 V
DS
= -80V ,V
GS
=0V
— — -250 V
DS
= -80V,
V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Leakage Forward — — -100 V
GS
= -20V
I
GSS
Gate-to-Source Leakage Reverse — — 100 V
GS
= 20V
Q
g
Total Gate Charge — — 45 V
GS
=-12V, I
D
= -6.5A
Q
gs
Gate-to-Source Charge — — 10 nC V
DS
= -50V
Q
gd
Gate-to-Drain (‘Miller’) Charge — — 25
t
d(on)
Turn-On Delay Time — — 30 V
DD
= -50V, I
D
= -6.5A,
t
r
Rise Time — — 50 V
GS
=-12V, R
G
= 7.5Ω
t
d(off)
Turn-Off Delay Time — — 70
t
f
Fall Time — — 70
L
S
+ L
D
Total Inductance — 7.0 —
C
iss
Input Capacitance — 1200 — V
GS
= 0V, V
DS
= -25V
C
oss
Output Capacitance — 290 — pF f = 1.0MHz
C
rss
Reverse Transfer Capacitance — 76 —
nA
Ω
nH
ns
µA
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
Junction-to-Case — — 5.0
R
thJA
Junction-to-Ambient — — 175 Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
S
Continuous Source Current (Body Diode) — — -6.5
I
SM
Pulse Source Current (Body Diode) ➀ — — -26
V
SD
Diode Forward Voltage — — -3.0 V T
j
= 25°C, I
S
= -6.5A, V
GS
= 0V ➃
t
rr
Reverse Recovery Time — — 250 nS T
j
= 25°C, I
F
= -6.5A, di/dt ≤ -100A/µs
Q
RR
Reverse Recovery Charge — — 0.74 µC V
DD
≤ -50V ➃
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
S
+ L
D
.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
°C/W
www.irf.com 3
Pre-Irradiation IRHF9130
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter 100K Rads(Si)
1
300K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -100 — -100
—
V
V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage -2.0 -4.0 -2.0 -5.0 V
GS
= V
DS
, I
D
= -1.0mA
I
GSS
Gate-to-Source Leakage Forward — -100 — -100
nA
V
GS
= -20V
I
GSS
Gate-to-Source Leakage Reverse — 100 — 100 V
GS
= 20 V
I
DSS
Zero Gate Voltage Drain Current — -25 — -25 µA V
DS
=-80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source ➃ — 0.30 — 0.30 Ω V
GS
= -12V, I
D
=-4.1A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source ➃ — 0.30 — 0.30 Ω V
GS
= -12V, I
D
=-4.1A
On-State Resistance (TO-39)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHF9130 (JANSR2N7389)
2. Part number IRHF93130 (JANSF2N7389)
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
V
SD
Diode Forward Voltage ➃ — -3.0 — -3.0 V V
GS
= 0V, I
S
= -6.5A
-120
-100
-80
-60
-40
-20
0
0 5 10 15 20
VGS
VDS
Cu
Br
I
noI
TEL
))²mc/gm(/VeM
ygrenE
)VeM(
egnaR
)mµ(
)V(SDV
V0=SGV@V5=SGV@V01=SGV@V51=SGV@V02=SGV@
uC8258234001-001-001-07-06-
rB8.6350393001-001-07-05-04-
I9.955438.2306- ————
