International Rectifier JANSF2N7261

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Item Description: Trans MOSFET N-CH 100V 8A 3-Pin TO-39 - Rail/Tube (Alt: JA

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1 - 1 $390.52200
2 - 2 $304.72550
3 - 3 $266.26500
4 - 7 $257.38950
8 + $230.76300



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International Rectifier 0522
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Absolute Maximum RatingsAbsolute Maximum Ratings
Absolute Maximum RatingsAbsolute Maximum Ratings
Absolute Maximum Ratings
ParameterParameter
ParameterParameter
Parameter
UnitsUnits
UnitsUnits
Units
I
D
@ V
GS
= 12V, T
C
= 25°C Continuous Drain Current 8.0
I
D
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current 5.0
I
DM
Pulsed Drain Current 32
P
D
@ T
C
= 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.20 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy 130 mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt Peak Diode Recovery dv/dt 5.5
V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Package Mounting Surface Temperature 300 ( for 5s)
Weight 0.42 (Typical ) g
Pre-IrradiationPre-Irradiation
Pre-IrradiationPre-Irradiation
Pre-Irradiation
International Rectifiers RADHard HEXFET
®
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
o
C
A
RADIATION HARDENEDRADIATION HARDENED
RADIATION HARDENEDRADIATION HARDENED
RADIATION HARDENED
POWER MOSFETPOWER MOSFET
POWER MOSFETPOWER MOSFET
POWER MOSFET
SURFCACE MOUNT(LCC-18)SURFCACE MOUNT(LCC-18)
SURFCACE MOUNT(LCC-18)SURFCACE MOUNT(LCC-18)
SURFCACE MOUNT(LCC-18)
7/3/01
www.irf.com 1
Product SummaryProduct Summary
Product SummaryProduct Summary
Product Summary
Part Number Radiation LevelPart Number Radiation Level
Part Number Radiation LevelPart Number Radiation Level
Part Number Radiation Level
R R
R R
R
DS(on)DS(on)
DS(on)DS(on)
DS(on)
I I
I I
I
D D
D D
D
QPL Part NumberQPL Part Number
QPL Part NumberQPL Part Number
QPL Part Number
IRHE7130 100K Rads (Si) 0.18 8.0A JANSR2N7261U
IRHE3130 300K Rads (Si) 0.18 8.0A JANSF2N7261U
IRHE4130 600K Rads (Si) 0.18 8.0A JANSG2N7261U
IRHE8130 1000K Rads (Si) 0.18 8.0A JANSH2N7261U
For footnotes refer to the last page
IRHE7130IRHE7130
IRHE7130IRHE7130
IRHE7130
JANSR2N7261UJANSR2N7261U
JANSR2N7261UJANSR2N7261U
JANSR2N7261U
100V, N-CHANNEL100V, N-CHANNEL
100V, N-CHANNEL100V, N-CHANNEL
100V, N-CHANNEL
REF: MIL-PRF-19500/601REF: MIL-PRF-19500/601
REF: MIL-PRF-19500/601REF: MIL-PRF-19500/601
REF: MIL-PRF-19500/601
RAD HardRAD Hard
RAD HardRAD Hard
RAD Hard
HEXFETHEXFET
HEXFETHEXFET
HEXFET
®
TECHNOLOGYTECHNOLOGY
TECHNOLOGYTECHNOLOGY
TECHNOLOGY
LCC-18LCC-18
LCC-18LCC-18
LCC-18
Features:Features:
Features:Features:
Features:
! Single Event Effect (SEE) Hardened
! Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Surface Mount
! Light Weight
PD - 91806B
2 www.irf.com
IRHE7130IRHE7130
IRHE7130IRHE7130
IRHE7130
Pre-IrradiationPre-Irradiation
Pre-IrradiationPre-Irradiation
Pre-Irradiation
Note: Corresponding Spice and Saber models are available on the G&S Website.Note: Corresponding Spice and Saber models are available on the G&S Website.
Note: Corresponding Spice and Saber models are available on the G&S Website.Note: Corresponding Spice and Saber models are available on the G&S Website.
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and CharacteristicsSource-Drain Diode Ratings and Characteristics
Source-Drain Diode Ratings and CharacteristicsSource-Drain Diode Ratings and Characteristics
Source-Drain Diode Ratings and Characteristics
ParameterParameter
ParameterParameter
Parameter
MinMin
MinMin
Min
TypTyp
TypTyp
Typ
MaxMax
MaxMax
Max
UnitsUnits
UnitsUnits
Units
Test ConditionsTest Conditions
Test ConditionsTest Conditions
Test Conditions
I
S
Continuous Source Current (Body Diode) 8.0
I
SM
Pulse Source Current (Body Diode)  32
V
SD
Diode Forward Voltage 1.5 V T
j
= 25°C, I
S
= 8.0A, V
GS
= 0V
t
rr
Reverse Recovery Time 350 nS T
j
= 25°C, I
F
= 8.0A, di/dt 100A/µs
Q
RR
Reverse Recovery Charge 3.0 µC V
DD
50V
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
S
+ L
D
.
A
Thermal ResistanceThermal Resistance
Thermal ResistanceThermal Resistance
Thermal Resistance
ParameterParameter
ParameterParameter
Parameter
MinMin
MinMin
Min
TypTyp
TypTyp
Typ
MaxMax
MaxMax
Max
UnitsUnits
UnitsUnits
Units
Test ConditionsTest Conditions
Test ConditionsTest Conditions
Test Conditions
R
thJC
Junction-to-Case 5.0
R
thJ-PCB
Junction-to-PC Board 19 °C/W Soldered to a copper clad PC board
Electrical CharacteristicsElectrical Characteristics
Electrical CharacteristicsElectrical Characteristics
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)@ Tj = 25°C (Unless Otherwise Specified)
@ Tj = 25°C (Unless Otherwise Specified)@ Tj = 25°C (Unless Otherwise Specified)
@ Tj = 25°C (Unless Otherwise Specified)
ParameterParameter
ParameterParameter
Parameter
MinMin
MinMin
Min
TypTyp
TypTyp
Typ
MaxMax
MaxMax
Max
UnitsUnits
UnitsUnits
Units
Test ConditionsTest Conditions
Test ConditionsTest Conditions
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage 100 V V
GS
= 0V, I
D
= 1.0mA
BV
DSS
/T
J
Temperature Coefficient of Breakdown 0.10 V/°C Reference to 25°C, I
D
= 1.0mA
Voltage
R
DS(on)
Static Drain-to-Source On-State 0.18 V
GS
= 12V, I
D
=5.0A
Resistance 0.185 V
GS
= 12V, I
D
= 8.0A
V
GS(th)
Gate Threshold Voltage 2.0 4.0 V V
DS
= V
GS
, I
D
= 1.0mA
g
fs
Forward Transconductance 2.5 S ( )V
DS
> 15V, I
DS
= 5.0A
I
DSS
Zero Gate Voltage Drain Current 25 V
DS
= 80V ,V
GS
=0V
250 V
DS
= 80V,
V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Leakage Forward 100 V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse -100 V
GS
= -20V
Q
g
Total Gate Charge 50 V
GS
=12V, I
D
=8.0A
Q
gs
Gate-to-Source Charge 12 nC V
DS
= 50V
Q
gd
Gate-to-Drain (Miller) Charge 20
t
d(on)
Turn-On Delay Time 25 V
DD
= 50V, I
D
=8.0A
t
r
Rise Time 55 V
GS
=12V, R
G
= 7.5
t
d(off)
Turn-Off Delay Time 55
t
f
Fall Time 45
L
S
+ L
D
Total Inductance 6.1 Measured from the center of drain
pad to center of source pad
C
iss
Input Capacitance 1100 V
GS
= 0V, V
DS
= 25V
C
oss
Output Capacitance 310 pF f = 1.0MHz
C
rss
Reverse Transfer Capacitance 55
nA
nH
ns
µA
www.irf.com 3
Pre-IrradiationPre-Irradiation
Pre-IrradiationPre-Irradiation
Pre-Irradiation
IRHE7130IRHE7130
IRHE7130IRHE7130
IRHE7130
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
ParameterParameter
ParameterParameter
Parameter 100K Rads(Si)
300 - 1000K Rads (Si)
U U
U U
U
nitsnits
nitsnits
nits
Test Conditions Test Conditions
Test Conditions Test Conditions
Test Conditions
Min Min
Min Min
Min
Max Max
Max Max
Max
Min Max Min Max
Min Max Min Max
Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100  100
V
V
GS
= 0V, I
D
= 1.0mA
V
/5JD
Gate Threshold Voltage 2.0 4.0 1.25 4.5 V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate-to-Source Leakage Forward 100  100
nA
V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse -100 -100 V
GS
= -20 V
I
DSS
Zero Gate Voltage Drain Current 25  50 µA V
DS
=80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source" 0.18  0.24 V
GS
= 12V, I
D
=5.0A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source" 0.18  0.24 V
GS
= 12V, I
D
=5.0A
On-State Resistance (LCC-18)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation CharacteristicsRadiation Characteristics
Radiation CharacteristicsRadiation Characteristics
Radiation Characteristics
1. Part numbers IRHE7130, (JANSR2N7261U)
2. Part number IRHE8130,I RHE3130, and IRHE4130(JANSF2N7261U, JANSG2N7261U, JANSH2N7261U)
Fig a.Fig a.
Fig a.Fig a.
Fig a. Single Event Effect, Safe Operating Area
V
SD
Diode Forward Voltage" 1.5  1.5 V V
GS
= 0V, I
S
= 8.0A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating AreaTable 2. Single Event Effect Safe Operating Area
Table 2. Single Event Effect Safe Operating AreaTable 2. Single Event Effect Safe Operating Area
Table 2. Single Event Effect Safe Operating Area
IonIon
IonIon
Ion
LETLET
LETLET
LET
Energy Range Energy Range
Energy Range Energy Range
Energy Range
VV
VV
V
DS(V)DS(V)
DS(V)DS(V)
DS(V)
MeV/(mg/cm
)) (MeV) (µm)
@ @
@ @
@
VV
VV
V
GSGS
GSGS
GS
=0V @=0V @
=0V @=0V @
=0V @
VV
VV
V
GSGS
GSGS
GS
=-5V@=-5V@
=-5V@=-5V@
=-5V@
VV
VV
V
GSGS
GSGS
GS
=-10V@=-10V@
=-10V@=-10V@
=-10V@
VV
VV
V
GSGS
GSGS
GS
=-15V@=-15V@
=-15V@=-15V@
=-15V@
VV
VV
V
GSGS
GSGS
GS
=-20V=-20V
=-20V=-20V
=-20V
Cu 28 285 43 100 100 100 80 60
Br 36.8 305 39 100 90 70 50
0
20
40
60
80
100
120
0 -5 -10 -15 -20 -25
VGS
VDS
Cu
Br
1234NEXT

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