Motorola Corp JAN2N3507

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Item Description: TRANS NPN 50V 3A TO39

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Motorola Corp 8746
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Technical Document


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Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N3507
Silicon NPN Transisto
r
Data Sheet
Description
Screening and processing per MIL-PRF-19500
JAN level (2N3507J)
JANTX level (2N3507JX)
JANTXV level (2N3507JV)
JANS level (2N3507JS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
www.SEMICOA.com or (714) 979-1900
Applications
General purpose switching transistor
Low power
NPN silicon transistor
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 1506
Reference document:
MIL-PRF-19500/349
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
T
C
= 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage V
CEO
50
Volts
Collector-Base Voltage V
CBO
80
Volts
Emitter-Base Voltage V
EBO
5
Volts
Collector Current, Continuous I
C
3
A
Power Dissipation, T
A
= 25
O
C
Derate linearly above 25
O
C
P
T
1
5.71
W
mW/°C
Power Dissipation, T
C
= 25
O
C
Derate linearly above 25
O
C
P
T
5
28.6
W
mW/°C
Thermal Resistance
R
θJA
175
°C/W
Operating Junction Temperature
Storage Temperature
T
J
T
STG
-65 to +200
°C
Copyright 2010
SEMICOA Corporation offers:
Please contact SEMICOA for special configurations
SEMICOA Corporation
Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N3507
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Base Breakdown Voltage V
(BR)CBO
I
C
= 100 µA
80
Volts
Collector-Emitter Breakdown Voltage V
(BR)CEO
I
C
= 10 mA 50
Volts
Emitter-Base Breakdown Voltage V
(BR)EBO
I
E
= 10 µA
5
Volts
Collector-Emitter Cutoff Current I
CEX1
V
CE
= 60 Volts, V
EB
= 4 Volts 1
µA
Collector-Emitter Cutoff Current I
CEX2
V
CE
= 60 Volts, V
EB
= 4 Volts,
T
A
= 150°C
1.5
mA
On Characteristics
Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
I
C
= 500 mA, V
CE
= 1 Volts
I
C
= 1.5 A, V
CE
= 2 Volts
I
C
= 2.5 A, V
CE
= 3 Volts
I
C
= 3.0 A, V
CE
= 5 Volts
I
C
= 500 mA, V
CE
= 1 Volts
T
A
= -55°C
35
30
25
20
17
175
150
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat2
V
BEsat3
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.5 A, I
B
= 150 mA
I
C
= 2.5 A, I
B
= 250 mA
0.5
1.0
1.5
Volts
Collector-Emitter Saturation Voltage
V
CEsat1
V
CEsat2
V
CEsat3
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.5 A, I
B
= 150 mA
I
C
= 2.5 A, I
B
= 250 mA
0.8
1.0
1.3
2.0
Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 5 Volts, I
C
= 100 mA,
f = 20 MHz
3 15
Open Circuit Output Capacitance C
OBO
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
40
pF
Open Circuit Input Capacitance C
IBO
V
EB
= 3 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
300
pF
Delay Time t
d
I
C
= 1.5 A, I
B1
= 150 mA 15
ns
Rise Time t
r
I
C
= 1.5 A, I
B1
= 150 mA 30
ns
Switching Characteristics
Storage Time t
s
I
C
= 1.5 A, I
B1
=I
B2
= 150 mA 55
ns
Fall Time t
f
I
C
= 1.5 A, I
B1
=I
B2
= 150 mA 35
ns
Copyright 2010
SEMICOA Corporation

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