Motorola Corp JAN2N3507

Cross Number:

Item Description: TRANS NPN 50V 3A TO39
Additional Information:

Qty Price
1 + $14.48130





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Motorola Corp 8746
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N3507
Silicon NPN Transisto
r
Data Sheet
Description
Screening and processing per MIL-PRF-19500
JAN level (2N3507J)
JANTX level (2N3507JX)
JANTXV level (2N3507JV)
JANS level (2N3507JS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
www.SEMICOA.com or (714) 979-1900
Applications
General purpose switching transistor
Low power
NPN silicon transistor
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 1506
Reference document:
MIL-PRF-19500/349
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
T
C
= 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage V
CEO
50
Volts
Collector-Base Voltage V
CBO
80
Volts
Emitter-Base Voltage V
EBO
5
Volts
Collector Current, Continuous I
C
3
A
Power Dissipation, T
A
= 25
O
C
Derate linearly above 25
O
C
P
T
1
5.71
W
mW/°C
Power Dissipation, T
C
= 25
O
C
Derate linearly above 25
O
C
P
T
5
28.6
W
mW/°C
Thermal Resistance
R
θJA
175
°C/W
Operating Junction Temperature
Storage Temperature
T
J
T
STG
-65 to +200
°C
Copyright 2010
SEMICOA Corporation offers:
Please contact SEMICOA for special configurations
SEMICOA Corporation
Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N3507
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Base Breakdown Voltage V
(BR)CBO
I
C
= 100 µA
80
Volts
Collector-Emitter Breakdown Voltage V
(BR)CEO
I
C
= 10 mA 50
Volts
Emitter-Base Breakdown Voltage V
(BR)EBO
I
E
= 10 µA
5
Volts
Collector-Emitter Cutoff Current I
CEX1
V
CE
= 60 Volts, V
EB
= 4 Volts 1
µA
Collector-Emitter Cutoff Current I
CEX2
V
CE
= 60 Volts, V
EB
= 4 Volts,
T
A
= 150°C
1.5
mA
On Characteristics
Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
I
C
= 500 mA, V
CE
= 1 Volts
I
C
= 1.5 A, V
CE
= 2 Volts
I
C
= 2.5 A, V
CE
= 3 Volts
I
C
= 3.0 A, V
CE
= 5 Volts
I
C
= 500 mA, V
CE
= 1 Volts
T
A
= -55°C
35
30
25
20
17
175
150
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat2
V
BEsat3
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.5 A, I
B
= 150 mA
I
C
= 2.5 A, I
B
= 250 mA
0.5
1.0
1.5
Volts
Collector-Emitter Saturation Voltage
V
CEsat1
V
CEsat2
V
CEsat3
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.5 A, I
B
= 150 mA
I
C
= 2.5 A, I
B
= 250 mA
0.8
1.0
1.3
2.0
Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 5 Volts, I
C
= 100 mA,
f = 20 MHz
3 15
Open Circuit Output Capacitance C
OBO
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
40
pF
Open Circuit Input Capacitance C
IBO
V
EB
= 3 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
300
pF
Delay Time t
d
I
C
= 1.5 A, I
B1
= 150 mA 15
ns
Rise Time t
r
I
C
= 1.5 A, I
B1
= 150 mA 30
ns
Switching Characteristics
Storage Time t
s
I
C
= 1.5 A, I
B1
=I
B2
= 150 mA 55
ns
Fall Time t
f
I
C
= 1.5 A, I
B1
=I
B2
= 150 mA 35
ns
Copyright 2010
SEMICOA Corporation

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Santa Fe Springs, CA 90670

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