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JAN2N1131

Part # JAN2N1131
Description Trans GP BJT PNP 40V 0.6A 3-Pin TO-39
Category TRANSISTOR
Availability In Stock
Qty 391
Qty Price
1 - 10 $23.76000
11 - 26 $18.90000
27 - 56 $17.82000
57 - 120 $16.56000
121 + $14.76000
Manufacturer Available Qty
RAYTHEON SYSTEMS
Date Code: 8835
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RAYTHEON SYSTEMS
Date Code: 7627
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RAYTHEON SYSTEMS
Date Code: 7627
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RAYTHEON SYSTEMS
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
LOW POWER PNP SILICONTRANSISTOR
Qualified per MIL-PRF-19500/177
T4-LDS-0187 Rev. 1 (101882) Page 1 of 3
DEVICES LEVELS
2N1131 2N1132
JAN
2N1131L 2N1132L
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage V
CEO
40 Vdc
Collector-Base Voltage V
CBO
50 Vdc
Emitter-Base Voltage V
EBO
5.0 Vdc
Collector Current I
C
600 mAdc
Total Power Dissipation
@ T
A
= +25°C
(1)
@ T
C
= +25°C
(2)
P
T
0.6
2.0
W
Operating & Storage Junction Temperature Range T
J
, T
stg
-65 to +200 °C
NOTES:
1/ Derate linearly 3.43mW/°C for T
A
> +25°C
2/ Derate linearly 11.4mW/°C for T
C
> +25°C
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
V
(BR)CEO
Vdc
I
C
= 10mAdc 40
Collector- Base Breakdown Voltage
V
(BR)CBO
Vdc
I
C
= 10µAdc
50
Emitter-Base Cutoff Current
I
EBO
V
EB
= 5.0Vdc
100 µAdc
Collector-Emitter Cutoff Current
I
CER
mAdc
V
CE
= 50Vdc, R
BE
≤ 10 ohms
10
Collector-Base Cutoff Current
I
CBO
V
CB
= 50Vdc
V
CB
= 30Vdc
10
1.0
µAdc
TO-39
2N1131, 2N1132
TO-5
2N1131L, 2N1132L
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0187 Rev. 1 (101882) Page 2 of 3
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERTICS
(3)
Forward-Current Transfer Ratio
h
FE
I
C
= 150mAdc, V
CE
= 10Vdc 2N1131, L
2N1132, L
20
30
45
90
I
C
= 5.0mAdc, V
CE
= 10Vdc 2N1131, L
2N1132, L
15
25
Collector-Emitter Saturation Voltage
V
CE(sat)
Vdc
I
C
= 150mAdc, I
B
= 15mAdc
1.3
Base-Emitter Saturation Voltage
V
BE(sat)
Vdc
I
C
= 150mAdc, I
B
= 15mAdc 1.5
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Small-Signal Short-Circuit Forward-Current Transfer Ratio
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz 2N1131, L
2N1132, L
h
fe
15
30
50
90
I
C
= 5.0mAdc, V
CE
= 10Vdc, f = 1.0kHz 2N1131, L
2N1132, L
20
30
Small-Signal Open-Circuit Output Admittance
h
ob
µmho
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
I
C
= 5.0mAdc, V
CE
= 10Vdc, f = 1.0kHz
1.0
5.0
Small-Signal Short-Circuit Input Impedance
Ω
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
I
C
= 5.0mAdc, V
CE
= 10Vdc, f = 1.0kHz
h
ib
25 35
10
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
|h
fe
|
I
C
= 50mAdc, V
CE
= 10Vdc, f = 20MHz 2N1131, L
2N1132, L
2.5
3.0
20
20
Output Capacitance
C
obo
pF
V
CB
= 10Vdc, I
E
= 0, 100 kHz ≤ f ≤ 1.0MHz
4.5
Iutput Capacitance
C
ibo
pF
V
EB
= 0.5Vdc, I
C
= 0, 100 kHz ≤ f ≤ 1.0MHz
80
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time + Turn-Off Time
(See figure 2 of MIL-PRF-177)
t
on +
t
off 50
ηs
(3) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0187 Rev. 1 (101882) Page 3 of 3
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods or by gauging procedure.
8. Dimension LU applies between L
1
and L
2
. Dimension LD applies between L
2
and LL minimum. Diameter is
uncontrolled in and beyond LL minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
14. * For L-suffix or non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm)
max. For non-L suffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max..
* FIGURE 1. Physical dimensions 2N1131 and 2N1132 ( TO-39), 2N1131L and 2N1132L (TO-5).
PACKAGE DIMENSIONS
Dimensions
Symbol Inches Millimeters Note
Min Max Min Max
CD .305 .335 7.75 8.51
CH .240 .260 6.10 6.60
HD .335 .370 8.51 9.40
LC .200 TP 5.08 TP 6
LD .016 .021 0.41 0.53 7, 8
LL .500 .750 12.70 19.05 7, 8, 12
LU .016 .019 0.41 0.48 7, 8
L
1
.050 1.27 7, 8
L
2
.250 6.35 7, 8
P .100 2.54
Q .050 1.27 5
TL .029 .045 0.74 1.14 4
TW .028 .034 0.71 0.86 3
r .010 0.25 10
α
45° TP 45° TP
6
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