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MJD32CT4G

Part # MJD32CT4G
Description BIP DPAK PNP 3A 100V TR - Tape and Reel
Category TRANSISTOR
Availability Out of Stock
Qty 0
Qty Price
1 + $0.14483

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 6
1 Publication Order Number:
MJD31/D
MJD31, MJD31C (NPN),
MJD32, MJD32C (PNP)
MJD31C and MJD32C are Preferred Devices
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
• Straight Lead Version in Plastic Sleeves (“1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
• Electrically Similar to Popular TIP31 and TIP32 Series
• Epoxy Meets UL 94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage
MJD31, MJD32
MJD31C, MJD32C
V
CEO
40
100
Vdc
Collector−Base Voltage
MJD31, MJD32
MJD31C, MJD32C
V
CB
40
100
Vdc
Emitter−Base Voltage V
EB
5 Vdc
Collector Current − Continuous
− Peak
I
C
3
5
Adc
Base Current I
B
1 Adc
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
15
0.12
W
W/°C
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
1.56
0.012
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
8.3 °C/W
Thermal Resistance, Junction−to−Ambient*
R
q
JA
80 °C/W
Lead Temperature for Soldering Purposes T
L
260 °C
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
DPAK−3
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING
DIAGRAMS
Y = Year
WW = Work Week
xx = 1, 1C, 2, or 2C
G = Pb−Free Package
1
2
3
4
YWW
J3xxG
1
2
3
4
YWW
J3xxG
http://onsemi.com
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 30 mAdc, I
B
= 0) MJD31, MJD32
MJD31C, MJD32C
V
CEO(sus)
40
100
−
−
Vdc
Collector Cutoff Current
(V
CE
= 40 Vdc, I
B
= 0) MJD31, MJD32
(V
CE
= 60 Vdc, I
B
= 0) MJD31C, MJD32C
I
CEO
− 50
mAdc
Collector Cutoff Current
(V
CE
= Rated V
CEO
, V
EB
= 0)
ICES − 20
mAdc
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
I
EBO
− 1 mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 1 Adc, V
CE
= 4 Vdc)
(I
C
= 3 Adc, V
CE
= 4 Vdc)
h
FE
25
10
−
50
−
Collector−Emitter Saturation Voltage
(I
C
= 3 Adc, I
B
= 375 mAdc)
V
CE(sat)
− 1.2 Vdc
Base−Emitter On Voltage
(I
C
= 3 Adc, V
CE
= 4 Vdc)
V
BE(on)
− 1.8 Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1 MHz)
f
T
3 − MHz
Small−Signal Current Gain
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1 kHz)
h
fe
20 − −
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. f
T
= ⎪h
fe
⎪• f
test
.
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
http://onsemi.com
3
0.03
I
C
, COLLECTOR CURRENT (AMPS)
5
0.07 0.3 3
70
30
300
h
FE
, DC CURRENT GAIN
V
CE
= 2 VT
J
= 150°C
100
0.1 0.7
25°C
−55 °C
50
0.05 0.5 1
25
25
Figure 1. Power Derating
T, TEMPERATURE (°C)
0
50 75 100 125 150
20
15
10
5
P
D
, POWER DISSIPATION (WATTS)
Figure 2. Switching Time Test Circuit
Figure 3. DC Current Gain
3
0.03
I
C
, COLLECTOR CURRENT (AMPS)
0.03
0.05 0.07 0.1 0.2 0.5 0.7 3
I
B1
= I
B2
I
C
/I
B
= 10
t
s
′ = t
s
− 1/8 t
f
T
J
= 25°C
t, TIME (s)μ
0.3
2
1
0.7
0.5
0.3
t
s
′
0.2
0.1
0.07
0.05
12
Figure 4. Turn−On Time
2
I
C
, COLLECTOR CURRENT (AMPS)
0.02
I
C
/I
B
= 10
T
J
= 25°C
t, TIME (s)μ
1
0.7
0.5
0.3
0.1
0.07
0.05
0.03
0.003
Figure 5. “On” Voltages
I
C
, COLLECTOR CURRENT (AMPS)
1
0.8
V, VOLTAGE (VOLTS)
1.4
1.2
0.4
0
+11 V
25 ms
0
−9 V
R
B
−4 V
D
1
SCOPE
V
CC
+30 V
R
C
t
r
, t
f
≤ 10 ns
DUTY CYCLE = 1%
51
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈ 100 mA
MSD6100 USED BELOW I
B
≈ 100 mA
REVERSE ALL POLARITIES FOR PNP.
500
7
10
0.03 0.07 0.3 30.1 0.7
0.05
0.5 1
t
r
@ V
CC
= 30 V
t
r
@ V
CC
= 10 V
t
d
@ V
BE(off)
= 2 V
0.6
0.2
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 2 V
V
CE(sat)
@ I
C
/I
B
= 10
t
f
@ V
CC
= 30 V
t
f
@ V
CC
= 10 V
2.5
0
2
1.5
1
0.5
T
A
T
C
Figure 6. Turn−Off Time
T
A
(SURFACE MOUNT)
T
C
TYPICAL CHARACTERISTICS
123NEXT
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