©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
MJD32/32C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: MJD32
: MJD32C
- 40
- 100
V
V
V
CEO
Collector-Emitter Voltage
: MJD32
: MJD32C
- 40
- 100
V
V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 3 A
I
CP
Collector Current (Pulse) - 5 A
I
B
Base Current - 1 A
P
C
Collector Dissipation (T
C
=25°C) 15 W
Collector Dissipation (T
a
=25°C) 1.56 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: MJD32
: MJD32C
I
C
= - 30mA, I
B
= 0 -40
-100
V
V
I
CEO
Collector Cut-off Current
: MJD32
: MJD32C
V
CE
= - 40V, I
B
= 0
V
CE
= - 60V, I
B
= 0
-50
-50
µA
µA
I
CES
Collector Cut-off Current
: MJD32
: MJD32C
V
CE
= - 40V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
-20
-20
µA
µA
I
EBO
Emitter Cut-off Current V
BE
= - 5V, I
C
= 0 -1 mA
h
FE
* DC Current Gain V
CE
= - 4V, I
C
= - 1A
V
CE
= - 4V, I
C
= - 3A
25
10 50
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= - 3, I
B
= - 375mA -1.2 V
V
BE
(on) * Base-Emitter ON Voltage V
CE
= - 4A, I
C
= - 3A -1.8 V
f
T
Current Gain Bandwidth Product V
CE
= -10V, I
C
= - 500mA 3 MHz
MJD32/32C
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP32 and TIP32C
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
11
