INTERSIL JANSR2N7403

Cross Number:

Item Description: Rad Hard P-Channel PowerMOSFET TO-254AA 3pin Tab

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1 - 1 $325.27440
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5 - 9 $214.38540
10 + $192.20760



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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

2-70
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
Formerly FSF9150R4
June 1998
JANSR2N7403
22A, -100V, 0.140 Ohm, Rad Hard,
P-Channel Power MOSFET
Features
22A, -100V, r
DS(ON)
= 0.140
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
- 7.0nA Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Die Family TA17756.
MIL-PRF-19500/633.
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Also available at other radiation and screening levels. See us on
the web, Intersil’s home page: http://www.intersil.com. Contact
your local Intersil Sales Office for additional information.
Symbol
Package
TO-254AA
Ordering Information
PART NUMBER PACKAGE BRAND
JANSR2N7403 TO-254AA JANSR2N7403
G
D
S
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
S
G
D
File Number 4486.1
2-71
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specified
JANSR2N7403 UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
-100 V
Drain to Gate Voltage (R
GS
= 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-100 V
Continuous Drain Current
T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
22 A
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
14 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
66 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±20 V
Maximum Power Dissipation
T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
125 W
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
50 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.00 W/
o
C
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . I
AS
66 A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
22 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
66 A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
-55 to 150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300
9.3
o
C
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 1mA, V
GS
= 0V -100 - - V
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C - - -7.0 V
T
C
= 25
o
C -2.0 - -6.0 V
T
C
= 125
o
C -1.0 - - V
Zero Gate Voltage Drain Current I
DSS
V
DS
= -80V,
V
GS
= 0V
T
C
= 25
o
C--25µA
T
C
= 125
o
C - - 250 µA
Gate to Source Leakage Current I
GSS
V
GS
= ±20V T
C
= 25
o
C - - 100 nA
T
C
= 125
o
C - - 200 nA
Drain to Source On-State Voltage V
DS(ON)
V
GS
= -12V, I
D
= 22A - - -3.23 V
Drain to Source On Resistance r
DS(ON)12
I
D
= 14A,
V
GS
= -12V
T
C
= 25
o
C - 0.090 0.140
T
C
= 125
o
C - - 0.217
Turn-On Delay Time t
d(ON)
V
DD
= -50V, I
D
= 22A,
R
L
= 2.27, V
GS
= -12V,
R
GS
= 4.7
- - 110 ns
Rise Time t
r
- - 390 ns
Turn-Off Delay Time t
d(OFF)
- - 300 ns
Fall Time t
f
- - 170 ns
Total Gate Charge (Not on slash sheet) Q
g(TOT)
V
GS
= 0V to -20V V
DD
= -50V,
I
D
= 22A
- - 240 nC
Gate Charge at 12V Q
g(12)
V
GS
= 0V to -12V - 130 160 nC
Threshold Gate Charge (Not on slash sheet) Q
g(TH)
V
GS
= 0V to -2V - - 9.5 nC
Gate Charge Source Q
gs
-2129nC
Gate Charge Drain Q
gd
-5165nC
Thermal Resistance Junction to Case R
θ
JC
- - 1.0
o
C/W
Thermal Resistance Junction to Ambient R
θ
JA
--48
o
C/W
JANSR2N7403
2-72
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage V
SD
I
SD
= 22A -0.6 - -1.8 V
Reverse Recovery Time t
rr
I
SD
= 22A, dI
SD
/dt = 100A/µs - - 270 ns
Electrical Specifications up to 100K RAD T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS
Drain to Source Breakdown Volts (Note 3) BV
DSS
V
GS
= 0, I
D
= 1mA -100 - V
Gate to Source Threshold Volts (Note 3) V
GS(TH)
V
GS
= V
DS
, I
D
= 1mA -2.0 -6.0 V
Gate to Body Leakage (Notes 2, 3) I
GSS
V
GS
= ±20V, V
DS
= 0V - 100 nA
Zero Gate Leakage (Note 3) I
DSS
V
GS
= 0, V
DS
= -80V - 25 µA
Drain to Source On-State Volts (Notes 1, 3) V
DS(ON)
V
GS
= -12V, I
D
= 22A - -3.23 V
Drain to Source On Resistance (Notes 1, 3) r
DS(ON)12
V
GS
= -12V, I
D
= 14A - 0.140
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= -12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR) (Note 4)
TEST SYMBOL
ENVIRONMENT (NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS
(V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
Single Event Effects Safe Operating
Area
SEESOA Ni 26 43 20 -100
Br 37 36 10 -100
Br 37 36 15 -80
Br 37 36 20 -50
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T
C
= 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING
AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
-120
-100
-80
-60
-40
-20
0
0101520255
V
DS
(V)
LET = 37MeV/mg/cm
2
, RANGE = 36µ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
LET = 26MeV/mg/cm
2
, RANGE = 43µ
V
GS
(V)
-300-100-10
LIMITING INDUCTANCE (HENRY)
DRAIN SUPPLY (V)
-1000
ILM = 10A
300A
1E-4
1E-5
1E-6
-30
100A
30A
1E-3
1E-7
JANSR2N7403
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