International Rectifier JANSR2N7476T1

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1 - 1 $338.51400
2 - 2 $264.14350
3 - 4 $230.80500
5 - 8 $223.11150
9 + $200.03100



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International Rectifier 0533
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Absolute Maximum Ratings
Parameter Units
I
D
@ V
GS
= 12V, T
C
= 25°C Continuous Drain Current 45
I
D
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current 29
I
DM
Pulsed Drain Current À 180
P
D
@ T
C
= 25°C Max. Power Dissipation 208 W
Linear Derating Factor 1.67 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy Á 256 mJ
I
AR
Avalanche Current À 45 A
E
AR
Repetitive Avalanche Energy À 20.8 mJ
dv/dt Peak Diode Recovery dv/dt  19.8
V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature
300 (0.063 in.(1.6 mm from case for 10s))
Weight 9.3 ( Typical) g
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
o
C
A
09/07/04
www.irf.com 1
For footnotes refer to the last page
TO-254AA
Pre-Irradiation
Low-Ohmic
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
RADIATION HARDENED JANSR2N7476T1
POWER MOSFET 200V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/685
IRHMS57260SE
Product Summary
Part Number Radiation Level R
DS
(on)
ID QPL Part Number
IRHMS57260SE 100K Rads (Si) 0.044 45A JANSR2N7476T1
55

TECHNOLOGY
PD - 94765
IRHMS57260SE, JANSR2N7476T1 Pre-Irradiation
2 www.irf.com
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
Junction-to-Case 0.60
R
thCS
Case-to-Sink 0.21 °C/W
R
thJA
Junction-to-Ambient 48 Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
S
Continuous Source Current (Body Diode) 45
I
SM
Pulse Source Current (Body Diode) À 180
V
SD
Diode Forward Voltage 1.2 V T
j
= 25°C, I
S
= 45A, V
GS
= 0V Ã
t
rr
Reverse Recovery Time 450 ns T
j
= 25°C, I
F
= 45A, di/dt 100A/µs
Q
RR
Reverse Recovery Charge 6.9 µCV
DD
25V Ã
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
S
+ L
D
.
A
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage 200 V V
GS
= 0V, I
D
= 1.0mA
BV
DSS
/T
J
Temperature Coefficient of Breakdown 0.25 V/°C Reference to 25°C, I
D
= 1.0mA
Voltage
R
DS(on)
Static Drain-to-Source On-State 0.044 V
GS
= 12V, I
D
= 29A
Resistance
V
GS(th)
Gate Threshold Voltage 2.5 4.5 V V
DS
= V
GS
, I
D
= 1.0mA
g
fs
Forward Transconductance 35 S ( )V
DS
= 15V, I
DS
= 29A Ã
I
DSS
Zero Gate Voltage Drain Current 10 V
DS
= 160V ,V
GS
=0V
——25 V
DS
= 160V,
V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Leakage Forward 100 V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse -100 V
GS
= -20V
Q
g
Total Gate Charge 165 V
GS
=12V, I
D
= 45A
Q
gs
Gate-to-Source Charge 45 nC V
DS
= 100V
Q
gd
Gate-to-Drain (‘Miller’) Charge 75
t
d(on)
Turn-On Delay Time 35 V
DD
= 100V, I
D
= 45A
t
r
Rise Time 125 V
GS
=12V, R
G
= 2.35
t
d(off)
Turn-Off Delay Time 80
t
f
Fall Time 50
L
S
+ L
D
Total Inductance 6.8 Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
C
iss
Input Capacitance 5295 V
GS
= 0V, V
DS
= 25V
C
oss
Output Capacitance 900 pF f = 1.0MHz
C
rss
Reverse Transfer Capacitance 37
R
g
Internal Gate Resistance 1.47 f = 0.89MHz, open drain
nA
Ã
nH
ns
µA
www.irf.com 3
Pre-Irradiation IRHMS57260SE, JANSR2N7476T1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion LET Energy Range
VDS (V)
MeV/(mg/cm
2
)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br 37 305 39 200 200 200 200 200
I 60 340 32 200 200 200 185 120
Au 82 350 28 200 200 150 50 25
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100K Rads (Si) Units Test Conditions
Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 200
V
V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage 2.0 4.5 V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate-to-Source Leakage Forward 100
nA
V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse -100 V
GS
= -20V
I
DSS
Zero Gate Voltage Drain Current 10 µA V
DS
=160V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3) 0.049 V
GS
= 12V, I
D
= 35A
R
DS(on)
Static Drain-to-Source On-state
V
SD
Diode Forward Voltage 1.2 V V
GS
= 0V, I
D
= 45A
Resistance (Low-Ohmic TO-254) — 0.044 V
GS
= 12V, I
D
= 35A
0
50
100
150
200
250
0 -5 -10 -15 -20
VGS
VDS
Br
I
Au
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