RAYTHEON SYSTEMS JAN2N720A

Cross Number: 2N720AJAN

Item Description: Trans GP BJT NPN 80V 0.5A 3-Pin TO-18

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RAYTHEON SYSTEMS 7638
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/182
Devices
Qualified Level
2N720A
2N1893
2N1893S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol
All Devices Units
Collector-Emitter Voltage
V
CEO
80 Vdc
Collector-Base Voltage
V
CBO
120 Vdc
Emitter-Base Voltage
V
EBO
7.0 Vdc
Collector-Emitter Voltage (R
BE
= 10 )
V
CER
100 Vdc
Collector Current I
C
500 mAdc
2N720A
2N1893, S
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
0.5
1.8
0.8
3.0
W
Operating & Storage Junction Temperature Range
T
J
,
T
srg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol 2N720A 2N1893, S
Unit
Thermal Resistance, Junction-to-Case
R
θJC
97 58
0
C/W
1) Derate linearly 2.86 mW/
0
C for 2N720A, 4.57 mW/
0
C for 2N1893, S T
A
> 25
0
C
2) Derate linearly 10.3 mW/
0
C for 2N720A, 17.2 mW/
0
C for 2N1893, S T
C
> 25
0
C
TO-18 (TO-206AA)*
2N720A
TO-5*
2N1893, 2N1893S
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 30 mAdc
V
(BR)
CEO
80
Vdc
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc, R
BE
= 10
V
(BR)
CER
100
Vdc
Collector-Base Cutoff Current
V
CB
= 120 Vdc
V
CB
= 90 Vdc
I
CBO
10
10
µAdc
ηAdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
V
EB
= 5.0 Vdc
I
EBO
10
10
µAdc
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N720A; 2N1893; 2N1893S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 0.1 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
h
FE
20
35
40 120
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
V
CE(sat)
5.0
Vdc
Base-Emitter Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
V
BE(sat)
1.3
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 10 Vdc, f = 20 MHz
h
fe
3.0 10
Small-Signal Short-Circuit Forward Current Transfer Ratio
V
CE
=5.0 Vdc, I
C
= 1.0 mAdc
V
CE
=10 Vdc, I
C
= 5.0 mAdc, f = 1.0 kHz
h
fe
35
45 100
Small-Signal Short-Circuit Input Impedance
V
CB
= 10 Vdc, I
C
= 5.0 mAdc
h
ib
4.0 8.0
Small-Signal Short-Circuit Output Admittance
V
CB
= 10 Vdc, I
C
= 5.0 mAdc
h
ob
0.5
µ
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz f 1.0 MHz
C
obo
2 15
P
F
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See Figure 3 of MIL-PRF-19500/182)
t
on +
t
off
30
ηs
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 2 of 2

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