General Electric JAN2N6796

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Item Description: Trans MOSFET N-CH 100V 32A 3-Pin TO-39 - Bulk

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation Page 1 of 9
2N6796, 2N6798, 2N6800, 2N6802
Available on
commercial
versions
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
Qualified Levels:
JAN, JANTX, JANTXV
and JANS*
DESCRIPTION
This family of switching transistors is military qualified up to the JANTXV level for high-
reliability applications. The 2N6798 part number is also qualified to the JANS level. These
devices are also available in a low profile U-18 LCC surface mount package. Microsemi also
offers numerous other transistor products to meet higher and lower power ratings with various
switching speed requirements in both through-hole and surface-mount packages.
TO-205AF (TO-39)
Package
Also available in:
U-18 LCC package
(surface mount)
2N6796U, 2N6798U,
2N6800U & 2N6802U
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N6796, 2N6798, 2N6800 and 2N6802 number series.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/557.
*JANS qualification is available on 2N6798 only.
(See
part nomenclature for all available options.)
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
Lightweight top-hat design with flexible terminals offers a variety of mounting flexibility.
Military and other high-reliability applications.
MAXIMUM RATINGS @ T
A
= +25 ºC unless otherwise stated
Parameters / Test Conditions
Symbol
Value
Unit
Operating & Storage Junction Temperature Range
T
J
& T
stg
-55 to +150
°C
Thermal Resistance Junction-to-Case
R
ӨJC
5.0
o
C/W
Total Power Dissipation
@ T
A
= +25 °C
@ T
C
= +25 °C
(1)
P
T
0.8
25
W
Drain-Source Voltage, dc
2N6796
2N6798
2N6800
2N6802
V
DS
100
200
400
500
V
Gate-Source Voltage, dc
V
GS
± 20
V
Drain Current, dc @ T
C
= +25 ºC
2N6796
2N6798
2N6800
2N6802
I
D1
8.0
5.5
3.0
2.5
A
Drain Current, dc @ T
C
= +100 ºC
2N6796
2N6798
2N6800
2N6802
I
D2
5.0
3.5
2.0
1.5
A
2N6796
2N6798
2N6800
2N6802
I
DM
32
22
14
11
A (pk)
2N6796
2N6798
2N6800
2N6802
I
S
8.0
5.5
3.0
2.5
A
See notes on next page.
MSC Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation Page 2 of 9
2N6796, 2N6798, 2N6800, 2N6802
Notes: 1. Derate linearly 0.2 W/°C for T
C
> +25 °C.
2. The following formula derives the maximum theoretical I
D
limit. I
D
is also limited by package and internal wires and may be limited due to
pin diameter.
3. I
DM
= 4 x I
D1
as calculated in note 2.
MECHANICAL and PACKAGING
CASE: Hermetically sealed, kovar base, nickel cap.
TERMINALS: Tin/lead solder dip nickel plate or RoHS compliant pure tin plate (commercial grade only).
MARKING: Part number, date code, manufacturer’s ID.
WEIGHT: Approximately 1.064 grams.
See
Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N6796 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS level (2N6798)
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only
)
Blank = non-RoHS compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
di/dt
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
I
F
Forward current
R
G
Gate drive impedance
V
DD
Drain supply voltage
V
DS
Drain source voltage, dc
V
GS
Gate source voltage, dc
T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation Page 3 of 9
2N6796, 2N6798, 2N6800, 2N6802
ELECTRICAL CHARACTERISTICS @ T
A
= +25 °C, unless otherwise noted
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 1.0 mA
2N6796
2N6798
2N6800
2N6802
V
(BR)DSS
100
200
400
500
V
Gate-Source Voltage (Threshold)
V
DS
≥ V
GS
, I
D
= 0.25 mA
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
J
= +125°C
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
J
= -55°C
V
GS(th)1
V
GS(th)2
V
GS(th)3
2.0
1.0
4.0
5.0
V
Gate Current
V
GS
= ± 20 V, V
DS
= 0 V
V
GS
= ± 20 V, V
DS
= 0 V, T
J
= +125°C
I
GSS1
I
GSS2
±100
±200
nA
Drain Current
V
GS
= 0 V, V
DS
= 80 V
V
GS
= 0 V, V
DS
= 160 V
V
GS
= 0 V, V
DS
= 320 V
V
GS
= 0 V, V
DS
= 400 V
2N6796
2N6798
2N6800
2N6802
I
DSS1
25
µA
Drain Current
V
GS
= 0 V, V
DS
= 80 V, T
J
= +125 °C
V
GS
= 0 V, V
DS
= 160 V, T
J
= +125 °C
V
GS
= 0 V, V
DS
= 320 V, T
J
= +125 °C
V
GS
= 0 V, V
DS
= 400 V, T
J
= +125 °C
2N6796
2N6798
2N6800
2N6802
I
DSS2
0.25
mA
Static Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 5.0 A pulsed
V
GS
= 10 V, I
D
= 3.5 A pulsed
V
GS
= 10 V, I
D
= 2.0 A pulsed
V
GS
= 10 V, I
D
= 1.5 A pulsed
2N6796
2N6798
2N6800
2N6802
r
DS(on)1
0.18
0.40
1.00
1.50
Static Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 8.0 A pulsed
V
GS
= 10 V, I
D
= 5.5 A pulsed
V
GS
= 10 V, I
D
= 3.0 A pulsed
V
GS
= 10 V, I
D
= 2.5 A pulsed
2N6796
2N6798
2N6800
2N6802
r
DS(on)2
0.195
0.420
1.100
1.600
Static Drain-Source On-State Resistance
T
J
= +125°C
V
GS
= 10 V, I
D
= 5.0 A pulsed
V
GS
= 10 V, I
D
= 3.5 A pulsed
V
GS
= 10 V, I
D
= 2.0 A pulsed
V
GS
= 10 V, I
D
= 1.5 A pulsed
2N6796
2N6798
2N6800
2N6802
r
DS(on)3
0.35
0.75
2.40
3.50
Diode Forward Voltage
V
GS
= 0 V, I
D
= 8.0 A pulsed
V
GS
= 0 V, I
D
= 5.5 A pulsed
V
GS
= 0 V, I
D
= 3.0 A pulsed
V
GS
= 0 V, I
D
= 2.5 A pulsed
2N6796
2N6798
2N6800
2N6802
V
SD
1.5
1.4
1.4
1.4
V
123NEXT

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