RCA JAN2N6782

Cross Number:

Item Description: N CHANNEL MOSFET - Bulk
Additional Information:

Qty Price
1 - 4 $15.84000
5 - 9 $12.60000
10 - 13 $11.88000
14 - 18 $11.04000
19 + $9.84000





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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

T4-LDS-0064, Rev. 3 (121467) ©2012 Microsemi Corporation Page 1 of 9
2N6782, 2N6784 and 2N6786
Available on
commercial
versions
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/556
Qualified Levels:
JAN, JANTX, and
JANTXV
DESCRIPTION
This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up to
the JANTXV level for high-reliability applications. These devices are also available in a low
profile U-18 LCC surface mount package. Microsemi also offers numerous other transistor
products to meet higher and lower power ratings with various switching speed requirements in
both through-hole and surface-mount packages.
TO-205AF (TO-39)
Package
Also available in:
U-18 LCC package
(surface mount)
2N6782U & 2N6786U
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N6782, 2N6784 and 2N6786 number series.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/556.
(See
part nomenclature for all available options.)
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
Lightweight top-hat design with flexible terminals offers a variety of mounting flexibility.
Military and other high-reliability applications.
MAXIMUM RATINGS @ T
A
= +25 ºC unless otherwise stated
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions
Symbol
Value
Unit
Operating & Storage Junction Temperature Range
T
J
& T
stg
-55 to +150
°C
Thermal Resistance Junction-to-Case
R
ӨJC
8.33
o
C/W
Total Power Dissipation
@ T
A
= +25 °C
@ T
C
= +25 °C
(1)
P
T
0.8
15
W
Drain-Source Voltage, dc 2N6782
2N6784
2N6786
V
DS
100
200
400
V
Gate-Source Voltage, dc
V
GS
± 20
V
C
2N6782
2N6784
2N6786
I
D1
3.50
2.25
1.25
A
C
2N6782
2N6784
2N6786
I
D2
2.25
1.50
0.80
A
2N6782
2N6784
2N6786
I
DM
14.0
9.0
5.5
A (pk)
Source Current 2N6782
2N6784
2N6786
I
S
3.50
2.25
1.25
A
See notes on next page.
T4-LDS-0064, Rev. 3 (121467) ©2012 Microsemi Corporation Page 2 of 9
2N6782, 2N6784 and 2N6786
Notes: 1. Derate linearly 0.12 W/°C for T
C
> +25 °C.
2. The following formula derives the maximum theoretical I
D
limit. I
D
is also limited by package and internal wires and may be limited due to
pin diameter.
3. I
DM
= 4 x I
D1
as calculated in note 1.
MECHANICAL and PACKAGING
CASE: Hermetically sealed, kovar base, nickel cap.
TERMINALS: Tin/lead solder dip nickel plate or RoHS compliant pure tin plate (commercial grade only).
MARKING: Part number, date code, manufacturer’s ID.
WEIGHT: Approximately 1.064 grams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N6782 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
di/dt
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
I
F
Forward current
R
G
Gate drive impedance
V
DD
Drain supply voltage
V
DS
Drain source voltage, dc
V
GS
Gate source voltage, dc
T4-LDS-0064, Rev. 3 (121467) ©2012 Microsemi Corporation Page 3 of 9
2N6782, 2N6784 and 2N6786
ELECTRICAL CHARACTERISTICS @ T
A
= +25 °C, unless otherwise noted
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 1.0 mA
2N6782
2N6784
2N6786
V
(BR)DSS
100
200
400
V
Gate-Source Voltage (Threshold)
V
DS
≥ V
GS
, I
D
= 0.25 mA
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
J
= +125 °C
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
J
= -55 °C
V
GS(th)1
V
GS(th)2
V
GS(th)3
2.0
1.0
4.0
5.0
V
Gate Current
V
GS
= ± 20 V, V
DS
= 0 V
V
GS
= ± 20 V, V
DS
= 0 V, T
J
= +125 °C
I
GSS1
I
GSS2
±100
±200
nA
Drain Current
V
GS
= 0 V, V
DS
= 80 V
V
GS
= 0 V, V
DS
= 160 V
V
GS
= 0 V, V
DS
= 320 V
2N6782
2N6784
2N6786
I
DSS1
25
µA
Drain Current
V
GS
= 0 V, V
DS
= 80 V, T
J
= +125 °C
V
GS
= 0 V, V
DS
= 160 V, T
J
= +125 °C
V
GS
= 0 V, V
DS
= 320 V, T
J
= +125 °C
2N6782
2N6784
2N6786
I
DSS2
0.25
mA
Static Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 2.25 A pulsed
V
GS
= 10 V, I
D
= 1.50 A pulsed
V
GS
= 10 V, I
D
= 0.80 A pulsed
2N6782
2N6784
2N6786
r
DS(on)1
0.60
1.50
3.60
Static Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 3.50 A pulsed
V
GS
= 10 V, I
D
= 2.25 A pulsed
V
GS
= 10 V, I
D
= 1.25 A pulsed
2N6782
2N6784
2N6786
r
DS(on)2
0.61
1.60
3.70
Static Drain-Source On-State Resistance
T
J
= +125 °C
V
GS
= 10 V, I
D
= 2.25 A pulsed
V
GS
= 10 V, I
D
= 1.50 A pulsed
V
GS
= 10 V, I
D
= 0.80 A pulsed
2N6782
2N6784
2N6786
r
DS(on)3
1.08
2.81
7.92
Diode Forward Voltage
V
GS
= 0 V, I
D
= 3.50 A pulsed
V
GS
= 0 V, I
D
= 2.25 A pulsed
V
GS
= 0 V, I
D
= 1.25 A pulsed
2N6782
2N6784
2N6786
V
SD
1.5
1.5
1.4
V
123NEXT

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