Silicon Transistor Corp JAN2N5686

Cross Number:

Item Description: TRANS GP BJT NPN 80V 50A 3PINTO-3 - Bulk

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1 - 1 $132.00000
2 - 2 $103.00000
3 - 6 $90.00000
7 - 8 $87.00000
9 + $78.00000



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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/464
Devices Qualified Level
2N5685 2N5686
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol
2N5685 2N5686
Units
Collector-Emitter Voltage
V
CEO
60 80 Vdc
Collector-Base Voltage
V
CBO
60 80 Vdc
Emitter-Base Voltage
V
EBO
5.0 Vdc
Base Current I
B
15 Adc
Collector Current
I
C
50 Adc
Total Power Dissipation @ T
C
= +25
0
C
(1)
@ T
C
= +100
0
C
(1)
P
T
300
171
W
W
Operating & Storage Junction Temperature Range
T
J
,
T
stg
-55 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
.0584
0
C/W
1) Derate linearly 1.715 W/
0
C between T
C
= 25
0
C and T
C
= 200
0
C
TO-3*
(TO-204AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc 2N5685
2N5686
V
(BR)
CEO
60
80
Vdc
Collector-Emitter Cutoff Current
V
CE
= 30 Vdc 2N5685
V
CE
= 40 Vdc 2N5686
I
CEO
500
500
µAdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc, V
BE
= 1.5 Vdc 2N5685
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc 2N5686
I
CEX
500
500
µAdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc 2N5685
V
CB
= 80 Vdc 2N5686
I
CBO
2.0
2.0
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N5685, 2N5686 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
I
EBO
1.0
mAdc
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 5.0 Adc, V
CE
= 2.0 Vdc
I
C
= 25 Adc, V
CE
= 2.0 Vdc
I
C
= 50 Adc, V
CE
= 5.0 Vdc
h
FE
30
15
5.0
60
Collector-Emitter Saturation Voltage
I
C
= 25 Adc, I
B
= 2.5 Adc
I
C
= 50 Adc, I
B
= 10 Adc
V
CE(sat)
1.0
5.0
Vdc
Base-Emitter Saturation Voltage
I
C
= 25 Adc, I
B
= 2.5 Adc
V
BE(sat)
2.0
Vdc
Base-Emitter Voltage
I
C
= 25 Adc, V
CE
= 2.0 Vdc
V
BE(on)
2.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 5.0 Adc, V
CE
= 10 Vdc, f = 1.0 MHz
h
fe
2.0
20
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 10 Adc, V
CE
= 5.0 Vdc, f = 1.0 kHz
h
fe
15
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 0.1 MHz f 1.0 MHz
C
obo
1200
pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 Vdc; I
C
= 25 Adc; I
B1
= 2.5 Adc
t
on
1.5
µs
Turn-Off Time
V
CC
= 30 Vdc; I
C
= 25 Adc; I
B1
= -I
B2
= 2.5 Adc
t
off
3.0
µs
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 6.0 Vdc, I
C
= 50 Adc
Test 2
V
CE
= 30 Vdc, I
C
= 10 Adc
Test 3
V
CE
= 50 Vdc, I
C
= 560 mAdc 2N5685
V
CE
= 60 Vdc, I
C
= 640 mAdc 2N5686
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
1
20101
Page 2 of 2

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