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JAN2N5667

Part # JAN2N5667
Description TRANS NPN 300V 5A TO-5
Category TRANSISTOR
Availability In Stock
Qty 19
Qty Price
1 - 3 $14.66678
4 - 7 $11.66676
8 - 11 $11.00009
12 - 15 $10.22230
16 + $9.11118
Manufacturer Available Qty
UNITRODE
Date Code: 8715
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
T4-LDS-0062 Rev. 1 (081095) Page 1 of 3
DEVICES LEVELS
2N5664 2N5666 2N5667 JAN
2N5665 2N5666S 2N5667S JANTX
2N5666U3 JANTV
JANS
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol
2N5664
2N5666, S
2N5665
2N5667, S
Unit
Collector-Emitter Voltage V
CEO
200 300 Vdc
Collector-Base Voltage V
CBO
250 400 Vdc
Emitter-Base Voltage V
EBO
6.0 Vdc
Base Current I
B
1.0 Adc
Collector Current I
C
5.0 Adc
2N5664
2N5665
2N5666, S
2N5667, S
2N5666U3
Total 1/
Power Dissipation
@ T
A
= +25°C
@ T
C
= +100°C
P
T
2.5
30
1.2
15
1.5
35
W
Operating & Storage Junction
Temperature Range
T
J
, T
stg
-65 to +200 °C
Note: 1) Consult 19500/455 for thermal derating curves.
ELECTRICAL CHARACTERISTICS (T
C
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc 2N5664, 2N5666
2N5665, 2N5667
V
(BR)CER
250
400
Vdc
Emitter-Base Breakdown Voltage
I
E
= 10μAdc
V
(BR)EBO
6.0
Vdc
Collector-Emitter Cutoff Current
V
CE
= 200Vdc
V
CE
= 300Vdc
2N5664, 2N5666
2N5665, 2N5667
I
CES
0.2
0.2
μAdc
Collector-Base Cutoff Current
V
CB
= 200Vdc
V
CB
= 250Vdc
2N5664, 2N5666
0.1
1.0
μAdc
mAdc
V
CB
= 300Vdc
V
CB
= 400Vdc
2N5665, 2N5667
I
CBO
0.1
1.0
μAdc
mAdc
TO-66 (TO-213AA)
2N5664, 2N5665
TO-5
2N5666, 2N5667
TO-39 (TO-205AD)
2N5666S, 2N5667S
U-3
2N5666U3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
T4-LDS-0062 Rev. 1 (081095) Page 2 of 3
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERTICS
Forward-Current Transfer Ratio
I
C
= 0.5Adc, V
CE
= 2.0Vdc 2N5664, 2N5666
2N5665, 2N5667
40
25
I
C
= 1.0Adc, V
CE
= 5.0Vdc 2N5664, 2N5666
2N5665, 2N5667
40
25
120
75
I
C
= 3.0Adc, V
CE
= 5.0Vdc 2N5664, 2N5666
2N5665, 2N5667
15
10
I
C
= 5.0Adc, V
CE
= 5.0Vdc All Types
h
FE
5.0
Collector-Emitter Saturation Voltage
I
C
= 3.0Adc, I
B
= 0.3Adc 2N5664, 2N5666 0.4
I
C
= 3.0Adc, I
B
= 0.6Adc 2N5665, 2N5667
0.4
I
C
= 5.0Adc, I
B
= 1.0Adc All Types
V
CE(sat)
1.0
Vdc
Base-Emitter Saturation Voltage
I
C
= 3.0Adc, I
B
= 0.3Adc 2N5664, 2N5666 1.2
I
C
= 3.0Adc, I
B
= 0.6Adc 2N5665, 2N5667
1.2
I
C
= 5.0Adc, I
B
= 1.0Adc All Types
V
BE(sat)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
C
= 0.5Adc, V
CE
= 5.0Vdc, f = 10MHz
|h
fe
|
2.0 7.0
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 100kHz f 1.0MHz
C
obo
120
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
V
CC
= 100Vdc; I
C
= 1.0Adc; I
B1
= 30mAdc
t
on
0.25
μs
Turn-Off Time
V
CC
= 100Vdc; I
C
= 1.0Adc; I
B1
= -I
B2
= 50mAdc 2N5664, 2N5666
2N5665, 2N5667
t
off
1.5
2.0
μs
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
T4-LDS-0062 Rev. 1 (081095) Page 3 of 3
SAFE OPERATING AREA
DC Tests
T
C
= 100°C, 1 Cycle, t 1.0s, t
r
+ t
f
= 10μs
Test 1
V
CE
= 6.0Vdc, I
C
= 5.0Adc
V
CE
= 3.0Vdc, I
C
= 5.0Adc
2N5664 , 2N5665
2N5666, 2N5667
Test 2
V
CE
= 32Vdc, I
C
= 0.75Adc
V
CE
= 40Vdc, I
C
= 0.75Adc
V
CE
= 29Vdc, I
C
= 0.4Adc
V
CE
= 37.5Vdc, I
C
= 0.4Adc
2N5664
2N5665
2N5666
2N5667
Test 3
V
CE
= 200Vdc, I
C
= 29mAdc
V
CE
= 200Vdc, I
C
= 19mAdc
V
CE
= 300Vdc, I
C
= 21mAdc
V
CE
= 300Vdc, I
C
= 14mAdc
2N5664
2N5666
2N5665
2N5667
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%