Silicon Transistor Corp JAN2N5038

Cross Number: 2N5038JAN

Item Description: TRANS GP BJT NPN 90V 20A 3PINTO-3 - Bulk

Qty Price
1 - 2 $39.18077
3 - 5 $30.57287
6 - 8 $26.71416
9 - 10 $25.82369
11 + $23.15227



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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/439
Devices Qualified Level
2N5038 2N5039
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N5038 2N5039 Units
Collector-Emitter Voltage
V
CEO
90 75 Vdc
Collector-Base Voltage
V
CBO
150 125 Vdc
Emitter-Base Voltage
V
EBO
7.0 Vdc
Base Current I
B
5.0 Adc
Collector Current
I
C
20 Adc
Total Power Dissipation @ T
C
= +25
0
C
(1)
P
T
140 W
Operating & Storage Temperature Range
T
op
,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
1.25
0
C/W
1) Derate linearly 800 mW/
0
C for T
C
> +25
0
C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc 2N5038
2N5039
V
(BR)
CEO
90
75
Vdc
Emitter-Base Breakdown Voltage
I
E
= 25 mAdc
V
(BR)
EBO
7.0 Vdc
Collector-Base Cutoff Current
V
CE
= 150 Vdc 2N5038
V
CE
= 125 Vdc 2N5039
I
CBO
1.0
1.0
µAdc
Collector-Base Cutoff Current
V
CE
= 70 Vdc 2N5038
V
CE
= 55 Vdc 2N5039
I
CEO
1.0
1.0
µAdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
I
EBO
1.0
µAdc
Collector-Emitter Cutoff Current
V
BE
= -1.5 Vdc V
CE
= 100 Vdc 2N5038
V
BE
= -1.5 Vdc V
CE
= 85 Vdc 2N5039
I
CEX
5.0
5.0
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
TO-3*
(TO-204AA)
2N5038, 2N5039, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 0.5 Adc, V
CE
= 5.0 Vdc 2N5038
2N5039
I
C
= 2.0 Adc, V
CE
= 5.0 Vdc 2N5038
2N5039
I
C
= 12 Adc, V
CE
= 5.0 Vdc 2N5038
I
C
= 10 Adc, V
CE
= 5.0 Vdc 2N5039
h
FE
50
30
50
30
15
15
200
150
Collector-Emitter Saturation Voltage
I
C
= 12 Adc, I
B
= 1.2 Adc 2N5038
I
C
= 10 Adc, I
B
= 1.0 Adc 2N5039
I
C
= 20 Adc, I
B
= 5.0 Adc Both
V
CE(sat)
1.0
1.0
2.5
Vdc
Base-Emitter Saturation Voltage
I
C
= 20 Adc, I
B
= 5.0 Adc
V
BE(sat)
3.3
Vdc
Base-Emitter Voltage
I
C
= 12 Adc, V
CE
= 5.0 Vdc 2N5038
I
C
= 10 Adc, V
CE
= 5.0 Vdc 2N5039
V
BE
1.8
1.8
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
C
= 2.0 Adc, V
CE
= 10 Vdc, f = 5.0 MHz
h
FE
12 48
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz f 1.0 MHz
C
obo
500 pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 ± 2 Vdc; I
C
= 12 Adc; I
B1
= 1.2 Adc 2N5038
V
CC
= 30 ± 2 Vdc; I
C
= 10 Adc; I
B1
= 1.0 Adc 2N5039
t
on
0.5
µs
Turn-Off Time
V
CC
= 30 ± 2 Vdc; I
C
= 12 Adc; I
B1
= -I
B2
= 1.2 Adc 2N5038
V
CC
= 30 ± 2 Vdc; I
C
= 10 Adc; I
B1
= -I
B2
= 1.0 Adc 2N5039
t
off
2.0
µs
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 28 Vdc, I
C
= 5.0 Adc
Test 2
V
CE
= 45 Vdc, I
C
= 0.9 Adc
Test 3
V
CE
= 7.0 Vdc, I
C
= 20 Adc
Test 4
V
CE
= 90 Vdc, I
C
= 0.23 Adc 2N5038
Test 4
V
CE
= 75 Vdc, I
C
= 0.32 Adc 2N5039
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2

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