RAYTHEON SYSTEMS JAN2N3634

Cross Number: 2N3634JAN

Item Description: TRANS GP BJT PNP 140V 1A 3PINTO-39 - Bulk

Qty Price
1 - 2 $32.53536
3 - 4 $25.38744
5 - 6 $22.18320
7 - 9 $21.44376
10 + $19.22544



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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

TECHNICAL DATA
PNP SILICON AMPLIFIER TRANSISTOR
Qualified per MIL-PRF-19500/357
Devices Qualified Level
2N3634
2N3634L
2N3635
2N3635L
2N3636
2N3636L
2N3637
2N3637L
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings Symbol
2N3634*
2N3635*
2N3636*
2N3637*
Unit
Collector-Emitter Voltage
V
CEO
140 175 Vdc
Collector-Base Voltage
V
CBO
140 175 Vdc
Emitter-Base Voltage
V
EBO
5.0 Vdc
Collector Current
I
C
1.0 Adc
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
1.0
5.0
W
W
Operating & Storage Junction Temperature Range
T
J
,
T
stg
-65 to +200
0
C
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly 5.71 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 28.6 mW/
0
C for T
C
> +25
0
C
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
TO-5*
2N3634, 2N3635
2N3636, 2N3637
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 10 mAdc 2N3634, 2N3635
2N3636, 2N3637
V
(BR)
CEO
140
175
Vdc
Collector-Base Cutoff Current
V
CB
= 100 Vdc
V
CB
= 140 Vdc 2N3634, 2N3635
I
CBO
100
10
ηAdc
µAdc
Emitter-Base Cutoff Current
V
EB
= 3.0 Vdc
V
EB
= 5.0 Vdc
I
EBO
50
10
ηAdc
µAdc
Collector-Emitter Cutoff Current
V
CE
= 100 Vdc
I
CEO
10
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3634, L, 2N3635, L, 2N3636, L, 2N3637, L JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
I
C
= 0.1 mAdc, V
CE
= 10 Vdc 2N3634, 2N3636
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 50 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 0.1 mAdc, V
CE
= 10 Vdc 2N3635, 2N3637
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 50 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
h
FE
h
FE
25
45
50
50
30
55
90
100
100
60
150
300
Collector-Emitter Saturation Voltage
I
C
= 10 mAdc, I
B
= 1.0 mAdc
I
C
= 50 mAdc, I
B
= 5.0 mAdc
V
CE(sat)
0.3
0.6
Vdc
Base-Emitter Saturation Voltage
I
C
= 10 mAdc, I
B
= 1.0 mAdc
I
C
= 50 mAdc, I
B
= 5.0 mAdc
V
BE(sat)
0.65
0.8
0.9
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
C
= 30 mAdc, V
CE
= 30 Vdc, f = 100 MHz 2N3634, 2N3636
2N3635, 2N3637
h
fe
1.5
2.0
8.0
8.5
Forward Current Transfer Ratio
I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz 2N3634, 2N3636
2N3635, 2N3637
h
fe
40
80
160
320
Small-Signal Short-Circuit Input Impedance
I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz 2N3634, 2N3636
2N3635, 2N3637
h
je
100
200
600
1200
Small-Signal Open-Circuit Output Admittance
I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
h
oe
200
µs
Output Capacitance
V
CB
= 20 Vdc, I
E
= 0, 100 kHz f 1.0 MHz
C
obo
10 pF
Input Capacitance
V
EB
= 1.0 Vdc, I
C
= 0, 100 kHz f 1.0 MHz
C
ibo
75 pF
Noise Figure
V
CE
= 10 Vdc, I
C
= 0.5 mAdc, R
g
= 1.0 f = 100 Hz
f = 1.0 kHz
f = 10 kHz
NF
5.0
3.0
3.0
dB
SAFE OPERATING AREA
DC Tests
T
C
= 25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 100 Vdc, I
C
= 30 mAdc 2N3634, 2N3635
V
CE
= 130 Vdc, I
C
= 20 mAdc 2N3636, 2N3637
Test 2
V
CE
= 50 Vdc, I
C
= 95 mAdc
Test 3
V
CE
= 5.0 Vdc, I
C
= 1.0 Adc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2

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