RAYTHEON SYSTEMS JAN2N3500

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Item Description: TRANS GP BJT NPN 150V 0.3A 3PIN TO-39 - Bulk

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

TECHNICAL DATA
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/366
Devices Qualified Level
2N3498
2N3498L
2N3499
2N3499L
2N3500
2N3500L
2N3501
2N3501L
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Symbol
2N3498
*
2N3499
*
2N3500
*
2N3501
*
Unit
Collector-Emitter Voltage
V
CEO
100 150 Vdc
Collector-Base Voltage
V
CBO
100 150 Vdc
Emitter-Base Voltage
V
EBO
6.0 6.0 Vdc
Collector Current
I
C
500 300 mAdc
Total Power Dissipation @ T
A
= 25
0
C
(1)
@ T
C
= 25
0
C
(2)
P
T
1.0
5.0
W
W
Operating & Storage Junction Temp. Range
T
J
,
T
stg
-55 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance: Junction-to-Case
Junction-to-Ambient
R
θJC
R
θJA
35
175
0
C/W
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly 5.71 W/
0
C for T
A
> 25
0
C
2) Derate linearly 28.6 W/
0
C for T
C
> 25
0
C
TO-5*
2N3498L, 2N3499L
2N3500L, 2N3501L
TO-39* (TO-205AD)
2N3498, 2N3499
2N3500, 2N3501
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc 2N3498, 2N3499
2N3500, 2N3501
V
(BR)
CEO
100
150
Vdc
Collector-Base Cutoff Current
V
CB
= 50 Vdc 2N3498, 2N3499
V
CB
= 75 Vdc 2N3500, 2N3501
V
CB
= 100 Vdc 2N3498, 2N3499
V
CB
= 150 Vdc 2N3500, 2N3501
I
CBO
50
50
10
10
ηAdc
ηAdc
µAdc
µAdc
Emitter-Base Cutoff Current
V
EB
= 4.0 Vdc
V
EB
= 6.0 Vdc
I
EBO
25
10
ηAdc
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3498, L, 2N3499, L, 2N3500, L, 2N3501, L JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 0.1 mAdc, V
CE
= 10 Vdc 2N3498, 2N3500
2N3499, 2N3501
I
C
= 1.0 mAdc, V
CE
= 10 Vdc 2N3498, 2N3500
2N3499, 2N3501
I
C
= 10 mAdc, V
CE
= 10 Vdc 2N3498, 2N3500
2N3499, 2N3501
I
C
= 150 mAdc, V
CE
= 10 Vdc 2N3498, 2N3500
2N3499, 2N3501
I
C
= 300 mAdc, V
CE
= 10 Vdc 2N3500
2N3501
I
C
= 500 mAdc, V
CE
= 10 Vdc 2N3498
2N3499
h
FE
20
35
25
50
35
75
40
100
15
20
15
20
120
300
Collector-Emitter Saturation Voltage
I
C
= 10 mAdc, I
B
= 1.0 mAdc All Types
I
C
= 300 mAdc, I
B
= 30 mAdc 2N3498, 2N349
I
C
= 150 mAdc, I
B
= 15 mAdc 2N3500, 2N3501
V
CE(sat)
0.2
0.6
0.4
Vdc
Base-Emitter Saturation Voltage
I
C
= 10 mAdc, I
B
= 1.0 mAdc All Types
I
C
= 300 mAdc, I
B
= 30 mAdc 2N3498, 2N3499
I
C
= 150 mAdc, I
B
= 15 mAdc 2N3500, 2N3501
V
BE(sat)
0.8
1.4
1.2
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz
h
fe
1.5 8.0
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz f 1.0 MHz 2N3498, 2N3499
2N3500, 2N3501
C
obo
10
8.0
pF
Input Capacitance
V
EB
= 0.5 Vdc, I
C
= 0, 100 kHz f 1.0 MHz
C
ibo
80 pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
EB
= 5 Vdc; I
C
= 150 mAdc; I
B1
= 15 mAdc
t
on
115
ηs
Turn-Off Time
I
C
= 150 mAdc; I
B1
= I
B2
= -15 mAdc
t
off
1150
ηs
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, t
r
10 ηs; 1 Cycle, t = 1.0 s
Test 1
V
CE
= 10 Vdc, I
C
= 500 mAdc 2N3498, 2N3499
V
CE
= 16.67 Vdc, I
C
= 300 mAdc 2N3500, 2N3501
Test 2
V
CE
= 50 Vdc, I
C
= 100 mAdc All Types
Test 3
V
CE
= 80 Vdc, I
C
= 40 mAdc All Types
Clamped Switching
T
A
= +25
0
C
Test 1
I
B
= 85 mAdc, I
C
= 500 mAdc 2N3498, 2N3499
I
B
= 50 mAdc, I
C
= 300 mAdc 2N3500, 2N3501
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2

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