STC/SIG JAN2N3439

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Item Description: TRANS GP BJT NPN 350V 1A 3PINTO-39 - Bulk

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

LDS-0022, Rev. 4 (111683) ©2011 Microsemi Corporation Page 1 of 6
2N3439 thru 2N3440
Available on
commercial
versions
NPN LOW POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/368
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
DESCRIPTION
This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
These devices are also available in TO-39 and low profile U4 and UA
packaging. Microsemi
also offers numerous other transistor products to meet higher and lower power ratings with
various switching speed requirements in both through-hole and surface-mount packages.
TO-39 (TO-205AD)
Package
Also available in:
TO-5 package
(long leaded)
2N3439L2N3440L
U4 package
(surface mount)
2N3439U4 2N3440U4
UA package
(surface mount)
2N3439UA - 2N3440UA
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N3439 through 2N3440 series.
JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/368.
RoHS compliant versions available (commercial grade only).
V
CE(sat)
= 0.5 V @ I
C
= 50 mA.
Turn-On time t
on
= 1.0 µs max @ I
C
= 20 mA, I
B1
= 2.0 mA.
Turn-Off time t
off
= 10 µs max @ I
C
= 20 mA, I
B1
= -I
B2
= 2.0 mA.
APPLICATIONS / BENEFITS
General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
Military and other high-reliability applications.
MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
MSCLawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSCIreland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol 2N3439 2N3440 Unit
Collector-Emitter Voltage V
CEO
350 250 V
Collector-Base Voltage
V
CBO
450
300
V
Emitter-Base Voltage V
EBO
7.0 V
Collector Current I
C
1.0 A
Total Power Dissipation
@ T
A
= +25°C
(1)
@ T
C
= +25°C
(2)
P
D
0.8
5.0
W
Operating & Storage Junction Temperature Range
T
J
, T
stg
°C
Notes: 1. Derate linearly @ 4.57mW/°C for T
A
> +25°C.
2. Derate linearly @ 28.5mW/°C for T
C
> +25°C
LDS-0022, Rev. 4 (111683) ©2011 Microsemi Corporation Page 2 of 6
2N3439 thru 2N3440
MECHANICAL and PACKAGING
CASE: Hermetically sealed, kovar base, nickel cap.
TERMINALS: Tin/lead solder dip or RoHS compliant pure tin (commercial grade only) plate over gold.
MARKING: Part number, date code, manufacturer’s ID.
POLARITY: NPN (see package outline).
WEIGHT: Approximately 1.064 grams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N3439 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance (available
on commercial grade only)
e3 = RoHS compliant with pure
tin plate
e4 = RoHS compliant with gold
plate
Blank = non-RoHS compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
C
obo
Common-base open-circuit output capacitance.
I
CEO
Collector cutoff current, base open.
I
CEX
Collector cutoff current, circuit between base and emitter.
I
EBO
Emitter cutoff current, collector open.
h
FE
Common-emitter static forward current transfer ratio.
V
CEO
Collector-emitter voltage, base open.
V
CBO
Collector-emitter voltage, emitter open.
V
EBO
Emitter-base voltage, collector open.
LDS-0022, Rev. 4 (111683) ©2011 Microsemi Corporation Page 3 of 6
2N3439 thru 2N3440
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
OFF CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
V
(BR)CEO
350
250
V
I
C
= 10 mA
R
BB1
= 470 ; V
BB1
= 6 V
L = 25 mH (min); f = 30 60 Hz
2N3439
2N3440
Collector-Emitter Cutoff Current
I
CEO
2.0
2.0
µA
V
CE
= 300 V
V
CE
= 200 V
2N3439
2N3440
Emitter-Base Cutoff Current
V
EB
= 7.0 V
I
EBO
10 µA
Collector-Emitter Cutoff Current
I
CEX
5.0
5.0
µA
V
CE
= 450 V, V
BE
= -1.5 V
V
CE
= 300 V, V
BE
= -1.5 V
2N3439
2N3440
Collector-Base Cutoff Current
I
CBO
2.0
2.0
5.0
5.0
µA
V
CB
= 360 V
V
CB
= 250 V
V
CB
= 450 V
V
CB
= 300 V
2N3439
2N3440
2N3439
2N3440
ON CHARACTERISTICS
(1)
Parameters / Test Conditions Symbol Min. Max. Unit
Forward-Current Transfer Ratio
I
C
= 20 mA, V
CE
= 10 V
I
C
= 2.0 mA, V
CE
= 10 V
I
C
= 0.2 mA, V
CE
= 10 V
h
FE
40
30
10
160
Collector-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 4.0 mA
V
CE(sat)
0.5 V
Base-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 4.0 mA
V
BE(sat)
1.3 V
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short-
Circuit Forward Current Transfer Ratio
I
C
= 10 mA, V
CE
= 10 V, f = 5.0 MHz
|h
fe
| 3.0 15
Forward Current Transfer Ratio
I
C
= 5.0 mA, V
CE
= 10 V, f = 1.0 kHz
h
fe
25
Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz ≤ f ≤ 1.0 MHz
C
obo
10 pF
Input Capacitance
V
CB
= 5.0 V, I
E
= 0, 100 kHz ≤ f ≤ 1.0 MHz
C
ibo
75 pF
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
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