New England Semi JAN2N3421

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Item Description: TRANS GP BJT NPN 80V 3A 3PINTO-5 - Bulk

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 1 of 6
2N3418S thru 2N3421S
Available on
commercial
versions
NPN MEDIUM POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/393
Qualified Levels:
JAN, JANTX and
JANTXV
DESCRIPTION
This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
These devices are also available in TO-5 and low profile U4 packages. Microsemi also offers
numerous other transistor products to meet higher and lower power ratings with various
switching speed requirements in both through-hole and surface-mount packages.
TO-39
(TO-205AD)
Package
Also available in:
TO-5 package
(leaded)
2N3418 2N3421
U4 package
(surface mount)
2N3418U4 2N3421U4
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N3418 through 2N3421 series.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/393.
RoHS compliant versions available (commercial grade only).
V
CE(sat)
= 0.25 V @ Ic = 1 A.
Rise time t
r
= 0.22 µs max @ I
C
= 1.0 A, I
B1
= 100 mA.
Fall time t
f
= 0.20 µs max @ I
C
= 1.0 A, I
B2
= -10 0 mA.
APPLICATIONS / BENEFITS
General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
Military and other high-reliability applications.
MAXIMUM RATINGS
MSCLawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSCIreland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol
2N3418S
2N3420S
2N3419S
2N3421S
Unit
Collector-Emitter Voltage V
CEO
60 80 V
Collector-Base Voltage V
CBO
85 125 V
Emitter-Base Voltage V
EBO
8 V
Collector Current
tp <= 1 ms, duty cycle <= 50%
I
C
3
5
A
Total Power Dissipation
@ T
A
= +25 °C
(1)
@ T
C
= +100 °C
(2)
P
D
1
5
W
Operating & Storage Junction Temperature Range
J
stg
-65 to +200
°C
Notes: 1. Derate linearly 5.72 mW/°C for T
A
> +25 °C.
2. Derate linearly 150 mW/°C for T
C
> +100 °C.
T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 2 of 6
2N3418S thru 2N3421S
MECHANICAL and PACKAGING
CASE: Hermetically sealed, kovar base, nickel cap.
MARKING: Part number, date code, manufacturer’s ID.
POLARITY: See
Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N3418 S (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Short-Leaded package
SYMBOLS & DEFINITIONS
Symbol
Definition
C
obo
Common-base open-circuit output capacitance.
I
CEO
Collector cutoff current, base open.
I
CEX
Collector cutoff current, circuit between base and emitter.
I
EBO
Emitter cutoff current, collector open.
h
FE
Common-emitter static forward current transfer ratio.
T
A
Ambient temperature, free-air temperature.
V
CEO
Collector-emitter voltage, base open.
V
CBO
Collector-emitter voltage, emitter open.
V
EBO
Emitter-base voltage, collector open.
T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 3 of 6
2N3418S thru 2N3421S
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
OFF CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Collector-Emitter Breakdown Current
V
(BR)CEO
V
I
C
= 50 mA, I
B
= 0
2N3418S, 2N3420S
2N3419S, 2N3421S
60
80
Collector-Emitter Cutoff Current
I
CEX
0.3
0.3
µA
V
BE
= -0.5 V, V
CE
= 80 V
V
BE
= -0.5 V, V
CE
= 120 V
2N3418S, 2N3420S
2N3419S, 2N3421S
Collector-Base Cutoff Current
V
CE
= 45 V, I
B
= 0
V
CE
= 60 V, I
B
= 0
2N3418S, 2N3420S
2N3419S, 2N3421S
I
CEO
5.0
5.0
µA
Emitter-Base Cutoff Current
V
EB
= 6.0 V, I
C
= 0
V
EB
= 8.0 V, I
C
= 0
I
EBO
0.5
10
µA
ON CHARACTERISTICS
(1)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
h
FE
I
C
= 100 mA, V
CE
= 2.0 V
2N3418S, 2N3419S
2N3420S, 2N3421S
20
40
I
C
= 1.0 A, V
CE
= 2.0 V
2N3418S, 2N3419S
2N3420S, 2N3421S
20
40
60
120
I
C
= 2.0 A, V
CE
= 2.0 V
2N3418S, 2N3419S
2N3420S, 2N3421S
15
30
I
C
= 5.0 A, V
CE
= 5.0 V
2N3418S, 2N3419S
2N3420S, 2N3421S
10
15
Collector-Emitter Saturation Voltage
V
CE(sat)
V
I
C
= 1.0 A, I
B
= 0.1 A
I
C
= 2.0 A, I
B
= 0.2 A
0.25
0.5
Base-Emitter Saturation Voltage
I
C
= 1.0 A, I
B
= 0.1 A
I
C
= 2.0 A, I
B
= 0.2 A
V
BE(sat)
0.6
0.7
1.2
1.4
V
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
|h
fe
| 1.3 0.8
I
C
= 0.1 A, V
CE
= 10 V, f = 20 MHz
Output Capacitance
C
obo
pF
V
CB
= 10 V, I
E
= 0, 100 kHz f 1.0 MHz
150
NOTES: (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
12NEXT

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