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ERROR gearman_wait(GEARMAN_TIMEOUT) timeout reached, 1 servers were poll(), no servers were available, pipe:false -> libgearman/universal.cc:337: pid(29793) JAN2N2484 | TRANSISTOR | Freelance Electronics
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JAN2N2484

Part # JAN2N2484
Description NPN TRANSISTOR (NPN) - Bulk
Category TRANSISTOR
Availability In Stock
Qty 41
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35 + $1.49366
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
T4-LDS-0058 Rev. 1 (080853) Page 1 of 2
DEVICES LEVELS
2N2484UA
JAN
2N2484UB
JANTX
2N2484UBC *
JANTXV
JANS
* Available to JANS quality level only.
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage V
CEO
60 Vdc
Collector-Base Voltage V
CBO
60 Vdc
Emitter-Base Voltage V
EBO
6.0 Vdc
Collector Current I
C
50 mAdc
Total Power Dissipation @ T
A
= +25°C
(1)
P
T
360 mW
Operating & Storage Junction Temperature Range T
J
, T
stg
-65 to +200 °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Value Unit
Thermal Resistance, Ambient-to-Case
2N2484
2N2484UA
2N2484UB, UBC
R
θJA
325
275
350
°C/W
1. See 19500/376 for Thermal Performance Curves.
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
V
(BR)CEO
60
Vdc
Collector-Emitter Cutoff Current
V
CE
= 45Vdc
I
CES
5.0
ηAdc
Collector-Base Cutoff Current
V
CB
= 45Vdc
V
CB
= 60Vdc
I
CBO
5.0
10
ηAdc
μAdc
Collector-Emitter Cutoff Current
V
CE
= 5.0Vdc
I
CEO
2.0
ηAdc
TO-18 (TO-206AA)
2N2484
2N2484UA
2N2484UB, UBC
(UBC = Ceramic Lid Version)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
T4-LDS-0058 Rev. 1 (080853) Page 2 of 2
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
V
EB
= 5.0Vdc
V
EB
= 6.0Vdc
I
EBO
2.0
10
ηAdc
μAdc
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 1.0μAdc, V
CE
= 5.0Vdc
I
C
= 10μAdc, V
CE
= 5.0Vdc
I
C
= 100μAdc, V
CE
= 5.0Vdc
I
C
= 500μAdc, V
CE
= 5.0Vdc
I
C
= 1.0mAdc, V
CE
= 5.0Vdc
I
C
= 10mAdc, V
CE
= 5.0Vdc
h
FE
45
200
225
250
250
225
500
675
800
800
800
Collector-Emitter Saturation Voltage
I
C
= 1.0mAdc, I
B
= 100μAdc
V
CE(sat)
0.3 Vdc
Base-Emitter Voltage
V
CE
= 5.0Vdc, I
C
= 100μAdc
V
BE(ON)
0.5 0.7 Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Forward Current Transfer Ratio
I
C
= 50μAdc, V
CE
= 5.0Vdc, f = 5.0MHz
I
C
= 500μAdc, V
CE
= 5.0Vdc, f = 30MHz
|h
fe
|
3.0
2.0
0.7
Open Circuit Output Admittance
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
h
oe
40
μmhos
Open Circuit Reverse-Voltage Transfer Ratio
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
h
re
8.0 x 10
-4
Input Impedance
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
h
je
3.5 24
kΩ
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
h
fe
250 900
Output Capacitance
V
CB
= 5.0Vdc, I
E
= 0, 100kHz ≤ f ≤ 1.0MHz
C
obo
5.0 pF
Input Capacitance
V
EB
= 0.5Vdc, I
C
= 0, 100kHz ≤ f ≤ 1.0MHz
C
ibo
6.0 pF
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.
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