UD9926 Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 3 of 5
www.unisonic.com.tw QW-R502-143.B
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain Source Voltage V
DSS
20 V
Gate Source Voltage V
GSS
±10 V
Continuous(Note 3) I
D
6 A
Drain Current
Pulsed (Note 2) I
DM
20 A
SOP-8 1.6 W
Power Dissipation
TSSOP-8
P
D
1.0 W
Junction Temperature T
J
+150 °C
Storage Temperature T
STG
-55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Surface Mounted on 1in
2
pad area, t≤10sec.
3. Pulse width limited by T
J(MAX)
THERMAL DATA
PARAMETER SYMBOL MIN TYP MAX UNIT
Junction to Ambient θ
JA
80 °C /W
ELECTRICAL CHARACTERISTICS (T
A
=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V, I
D
=250uA 20 V
Drain-Source Leakage Current I
DSS
V
DS
=16V, V
GS
=0V 1 uA
Gate-Source Leakage Current I
GSS
V
DS
=0V, V
GS
=±8V ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(TH)
V
DS
=V
GS
, I
D
=250uA 0.5 0.7 1.5 V
V
GS
=4.5V, I
D
=6A 28 32 mΩ
Drain-Source On-State Resistance (Note2) R
DS(ON)
V
GS
=2.5V, I
D
=5.2A 38 45 mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance C
ISS
520 pF
Output Capacitance C
OSS
110 pF
Reverse Transfer Capacitance C
RSS
V
GS
=0V,V
DS
=15V,f=1.0MHz
70 pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note) t
D(ON)
17 ns
Turn-ON Rise Time t
R
15 ns
Turn-OFF Delay Time t
D(OFF)
45 ns
Turn-OFF Fall Time t
F
V
DD
=10V, V
GS
=4.5V, I
D
=1A,
R
G
=0.2Ω
25 ns
Total Gate Charge (Note) Q
G
10 nC
Gate-Source Charge Q
GS
3.6 nC
Gate-Drain Charge Q
GD
V
DS
=10V, V
GS
=-4.5V, I
D
=6A
2 nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2) V
SD
I
S
=1.7A, V
GS
=0V 0.6 1.3 V
Maximum Continuous Drain-Source Diode
Forward Current
I
S
2.5 A
Note: Pulse width ≤300us, duty cycle ≤2%.
