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81073

Part # 81073
Description
Category SWITCH
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GRAYHILL
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

PACKAGE
SCHEMATIC
1/21/04
Page 1 of 12
© 2004 Fairchild Semiconductor Corporation
6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8101 MOC8102 MOC8103 MOC8104
MOC8105 MOC8106 MOC8107 MOC8108
CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4
FEATURES
The MOC810X and CNY17F-X devices consist of a gallium arsenide LED optically coupled to a silicon phototransistor in a dual-in-
line package.
Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation
Narrow (CTR) Windows that Translate to a Narrow and Predictable Open Loop Gain Window
•Very Low Coupled Capacitance along with No Chip to Pin 6 Base Connection for Minimum Noise Susceptibility
•To order devices that are tested and marked per VDE 0884 requirements, the suffix “.300” must be included at the end
of part number. e.g. MOC8101.300 VDE 0884 is a test option.
APPLICATIONS
Switchmode Power Supplies (Feedback Control)
•AC Line/Digital Logic Isolation
Interfacing and coupling systems of different potentials and impedances
6
1
6
1
6
1
2
1
3NC
5
6NC
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. NO CONNECTION
4
1/21/04
Page 2 of 12
© 2004 Fairchild Semiconductor Corporation
6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8101 MOC8102 MOC8103 MOC8104
MOC8105 MOC8106 MOC8107 MOC8108
CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C Unless otherwise specified)
Parameter Symbol Value Unit
INPUT LED
Forward Current - Continuous I
F
100 mA
Forward Current - Peak (PW = 1µs, 300pps) I
F
(pk) 1 A
Reverse Voltage V
R
6Volts
LED Power Dissipation @ T
A
= 25°C
P
D
150 mW
Derate above 25°C 2.0 mW/°C
OUTPUT TRANSISTOR
Collector-Emitter Voltage
MOC8106/7/8, CNY17F-1/2/3/4
V
CEO
70
Volts
MOC8101/2/3/4/5 30
Emitter-Collector Voltage V
ECO
7Volts
Detector Power Dissipation @ T
A
= 25°C
P
D
150 mW
Derate above 25°C 2.0 mW/°C
TOTAL DEVICE
Input-Output Isolation Voltage
V
ISO
5300 Vac(rms)
(f = 60 Hz, t = 1 min.)
Total Device Power Dissipation @ T
A
= 25°C
P
D
250 mW
Derate above 25°C 3.3 mW/°C
Ambient Operating Temperature Range T
OPR
-55 to +100 °C
Storage Temperature Range T
STG
-55 to +150 °C
Lead Soldering Temperature
T
SOL
260 °C
(1/16” from case, 10 sec. duration)
1/21/04
Page 3 of 12
© 2004 Fairchild Semiconductor Corporation
6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8101 MOC8102 MOC8103 MOC8104
MOC8105 MOC8106 MOC8107 MOC8108
CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4
** All typicals at T
A
= 25°C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C Unless otherwise specified)
(1)
Characteristic Symbol Min Typ** Max Unit
INPUT LED
Forward Voltage (I
F
= 60 mA) CNY17F-X V
F
1.40 1.65 V
(I
F
= 10 mA) MOC810X 1.0 1.18 1.5
Reverse Leakage Current (V
R
= 5.0 V) I
R
0.001 10 µA
Capacitance C 18 pF
OUTPUT TRANSISTOR
Collector-Emitter Dark Current (V
CE
= 10 V, T
A
= 25°C) I
CEO1
1.0 50 nA
(V
CE
= 10 V, T
A
= 100°C) I
CEO2
1.0 µA
Collector-Emitter Breakdown Voltage
MOC8101/2/3/4/5 (I
C
= 1.0 mA)
V
(BR) CEO
30 100
V
MOC8106/7/8, CNY17F-1/2/3/4 (I
C
= 1.0 mA) 70 100
Emitter-Collector Breakdown Voltage (I
E
= 100 µA) V
(BR) ECO
7.0 10 V
Collector-Emitter Capacitance (f = 1.0 MHz, V
CE
= 0) C
CE
—8—pF
COUPLED
Output Collector Current
(I
F
= 10 mA, V
CE
= 10 V)
MOC8101
(CTR)
(2)
50—80
%
MOC8102 73 117
MOC8103 108 173
MOC8104 160 256
MOC8105 65 133
MOC8106 50 150
MOC8107 100 300
MOC8108 250 600
(I
F
= 10 mA, V
CE
= 5 V)
CNY17F-1 40 80
CNY17F-2 63 125
CNY17F-3 100 200
CNY17F-4 160 320
Collector-Emitter Saturation Voltage
CNY17F-1/2/3/4 (I
C
= 2.5 mA, I
F
= 10 mA)
V
CE(sat)
——0.4 V
MOC8101/2/3/4/5/6/7/8 (I
C
= 500 µA, I
F
= 5.0 mA)
Isolation Voltage (f = 60 Hz, t = 1.0 min.)
(4)
V
ISO
5300 Vac(rms)
Isolation Resistance (V
I-O
= 500 V)
(4)
R
ISO
10
11
——
Isolation Capacitance (V
I-O
= 0, f = 1.0 MHz)
(4)
C
ISO
0.5 pF
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