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IRFP340

Part # IRFP340
Description MOSFET N-CHANNEL 400V - Bulk
Category RECTIFIER
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

4-329
File Number
2088.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
IRFP340
11A, 400V, 0.550 Ohm, N-Channel
Power MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
N-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17424.
Features
11A, 400V
•r
DS(ON)
= 0.550
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER PACKAGE BRAND
IRFP340 TO-247 IRFP340
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
Data Sheet July 1999
4-330
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specified
IRFP340 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
400 V
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
400 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
11 A
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
6.8 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
44 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
150 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
480 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
V
GS
= 0V, I
D
= 250µA (Figure 10) 400 - - V
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250µA 2.0 - 4.0 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V - - 25 µA
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C - - 250 µA
On-State Drain Current (Note 2) I
D(ON)
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V 11 - - A
Gate to Source Leakage I
GSS
V
GS
= ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) r
DS(ON)
V
GS
= 10V, I
D
= 5.5A (Figures 8, 9) - 0.47 0.55
Forward Transconductance (Note 2) g
fs
V
DS
50V, I
D
= 5.5A (Figure 12) 6.1 9.1 - S
Turn-On Delay Time t
d(ON)
V
DD
= 200V, I
D
11A, R
GS
= 9.1, R
L
= 17.4
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-1421ns
Rise Time t
r
-2741ns
Turn-Off Delay Time t
d(OFF)
-5075ns
Fall Time t
f
-2436ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 10A, V
DS
= 0.8 x Rated BV
DSS,
I
g(REF)
= 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating Temperature
-4163nC
Gate to Source Charge Q
gs
- 6.0 - nC
Gate to Drain “Miller” Charge Q
gd
-23-nC
Input Capacitance C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 11) - 1250 - pF
Output Capacitance C
OSS
- 300 - pF
Reverse-Transfer Capacitance C
RSS
-80- pF
Internal Drain Inductance L
D
Measured from the Drain
Lead, 6mm (0.25in) from the
Package to the Center of the
Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 5.0 - nH
Internal Source Inductance L
S
Measured from the Source
Lead, 6mm (0.25in) from
Header to the Source
Bonding Pad
- 12.5 - nH
Junction to Case R
θJC
- - 0.83 oC/W
Junction to Ambient R
θJA
Free Air Operation - - 30 oC/W
L
S
L
D
G
D
S
IRFP340
4-331
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
- - 11 A
Pulse Source to Drain Current
(Note 3)
I
SDM
- - 44 A
Source to Drain Diode Voltage (Note 2) V
SD
T
J
= 25
o
C, I
SD
= 11A, V
GS
= 0V (Figure 13) - - 2.0 V
Reverse Recovery Time t
rr
T
J
= 25
o
C, I
SD
= 10A, dI
SD
/dt = 100A/µs 170 370 790 ns
Reverse Recovered Charge Q
RR
T
J
= 25
o
C, I
SD
= 10A, dI
SD
/dt = 100A/µs 1.6 3.8 8.2 µC
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 7.0mH, R
G
= 50, peak I
AS
= 11A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0 50 100 150
0
T
C
, CASE TEMPERATURE (
o
C)
POWER DISSIPATION MULTIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
T
C
, CASE TEMPERATURE (
o
C)
50 75 10025 150
15
12
9
0
6
I
D
, DRAIN CURRENT (A)
3
125
1
0.1
10
-2
10
-2
10
-5
10
-4
10
-3
0.1 1 10
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
SINGLE PULSE
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
DUTY FACTOR: D = t
1
/t
2
t
2
P
DM
t
1
NOTES:
t
2
T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
0.02
0.01
0.05
0.5
0.1
0.2
IRFP340
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