IRF5210S/LPbF
2 www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
Starting T
J
= 25°C, L = 0.46mH
R
G
= 25Ω, I
AS
= -23A. (See Figure 12)
I
SD
≤ -23A, di/dt ≤ -650A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1" square PCB (FR-4or G-10
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
p. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
e-100––––––V
∆ΒV
DSS
∆T
J
Breakdown Volta
e Temp. Coefficient ––– -0.11 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 60
m
Ω
V
GS(th)
Gate Threshold Volta
e-2.0–––-4.0V
fs Forward Transconductance 9.5 ––– ––– S
I
DSS
Drain-to-Source Leaka
e Current ––– ––– -50 µA
––– ––– -250
I
GSS
Gate-to-Source Forward Leaka
e ––– ––– 100 nA
Gate-to-Source Reverse Leaka
e––––––-100
Q
g
Total Gate Char
e ––– 150 230 nC
Q
gs
Gate-to-Source Char
e ––– 22 33
Q
gd
Gate-to-Drain ("Miller") Char
e–––81120
t
d(on)
Turn-On Dela
Time ––– 14 ––– ns
t
r
Rise Time ––– 63 –––
t
d(off)
Turn-Off Dela
Time ––– 72 –––
t
f
Fall Time ––– 55 –––
L
D
Internal Drain Inductance ––– 4.5 ––– nH Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from packa
e
and center of die contact
C
iss
Input Capacitance ––– 2780 ––– pF
C
oss
Output Capacitance ––– 800 –––
C
rss
Reverse Transfer Capacitance ––– 430 –––
Source-Drain Ratings and Characteristics
Parameter Min. T
p. Max. Units
I
S
Continuous Source Current ––– ––– -38
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– -140
Bod
Diode
V
SD
Diode Forward Voltage
––– ––– -1.6 V
t
rr
Reverse Recovery Time
––– 170 260 ns
Q
rr
Reverse Recover
Char
e ––– 1180 1770 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -100V, V
GS
= 0V
V
DS
= -80V, V
GS
= 0V, T
J
= 125°C
Conditions
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= -38A
T
J
= 25°C, I
F
= -23A, V
DD
= -25V
di/dt = -100A/µs
T
J
= 25°C, I
S
= -23A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= -10V
MOSFET symbol
V
GS
= 0V
V
DS
= -25V
Conditions
ƒ = 1.0MHz, See Fig. 5
R
G
= 2.4
Ω
I
D
= -23A
V
DS
= -50V, I
D
= -23A
V
DD
= -50V
I
D
= -23A
V
GS
= 20V
V
GS
= -20V
V
DS
= -80V
V
GS
= -10V
