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T85HFL100S05

Part # T85HFL100S05
Description Diode Switching 1KV 85A 2-PinT-Module
Category Microcircuit
Availability In Stock
Qty 1
Qty Price
1 + $35.79708
Manufacturer Available Qty
International Rectifier
Date Code: 9028
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

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40 A
70 A
85 A
T..HFL SERIES
FAST RECOVERY DIODES
T-Modules
Bulletin I27107 rev. A 09/97
1
I
F(AV)
40 70 85 A
I
F(RMS)
63 110 133 A
I
FSM
50Hz 475 830 1300 A
60Hz 500 870 1370 A
I
2
t 50Hz 1130 3460 8550 A
2
s
60Hz 1030 3160 7810 A
2
s
V
RRM
range 100 to 1000 V
t
rr
range 200 to 1000 ns
T
J
range -40 to 125
o
C
Parameters T40HFL T70HFL T85HFL Units
This serie of T-module uses fast recovery power diodes in
a single diode configuration. The semiconductors are elec-
trically isolated from the metal base, allowing common
heatsink and compact assemblies to be built.
These single diode modules can be used in conjunction
with the thyristor modules as a freewheel diode. Applica-
tion includes self-commutated inverters, DC choppers,
motor control, inductive heating and electronic welders.
These modules are intended for those applications where
very fast recovery characteristics are required and for
general power switching applications.
Description
Features
Fast recovery time characteristics
Electrically isolated base plate
3500 V
RMS
isolating voltage
Standard JEDEC package
Simplified mechanical designs,
rapid assembly
Large creepage distances
UL E78996 approved
Major Ratings and Characteristics
2 www.irf.com
T..HFL Series
Bulletin I27107 rev. A 09/97
I
F(AV)
Max. average fwd current 40 70 85 A 180
o
conduction, half sine wave
@ Case temperature 70 70 70
o
C
I
F(RMS)
Max. RMS forward current 63 110 133 A
I
FSM
Max. peak, one-cycle 475 830 1300 A t = 10ms No voltage
forward, non-repetitive 500 870 1370 t = 8.3ms reapplied
surge current 400 700 1100 t = 10ms 100% V
RRM
420 730 1150 t = 8.3ms reapplied Sinusoidal half wave,
I
2
t Maximum I
2
t for fusing 1130 3460 8550 A
2
s t = 10ms No voltage Initial T
J
= T
J
max.
1030 3160 7810 t = 8.3ms reapplied
800 2450 6050 t = 10ms 100% V
RRM
730 2230 5520 t = 8.3ms reapplied
I
2
t Maximum I
2
t for fusing 11300 34600 85500 A
2
s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level value of threshold
voltage
V
F(TO)2
High level value of threshold
voltage
r
f1
Low level value of forward
slope resistance
r
f2
High level value of forward
slope resistance
I
FM
= π x I
F(AV)
, T
J
= 25
o
C, tp = 400µs square wave
Av. power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
7.0 2.77 2.15 m T
J
= 25
o
C, (16.7% x π x I
F(AV)
< I < π x I
F(AV)
)
0.82 0.87 0.84 V T
J
= 25
o
C, (16.7% x π x I
F(AV)
< I < π x I
F(AV)
)
0.84 0.90 0.86 T
J
= 25
o
C, (I > π x I
F(AV)
)
6.8 2.67 2.07 T
J
= 25
o
C, (I > π x I
F(AV)
)
Parameters T40HFL T70HFL T85HFL Units Conditions
V
FM
Max. forward voltage drop 1.60 1.73 1.55 V
Type number Voltage t
rr
V
RRM
, maximum repetitive V
RSM
, maximum non-repetitive I
RRM
max.
Code Code peak reverse voltage peak reverse voltage T
J
= @25°C
VVµ A
10 S02, S05, S10 100 150 100
T40HFL.. 20 S02, S05, S10 200 300
T70HFL.. 40 S02, S05, S10 400 500
T85HFL.. 60 S02, S05, S10 600 700
80 S05, S10 800 900
100 S05, S10 1000 1100
I
RRM
Max. peak rev. leak. current 20 mA T
J
= 125
o
C
V
INS
RMS isolation voltage 3500 V 50Hz, circuit to base, all terminals shorted
T
J
= 25°C, t = 1 s
Voltage Ratings
ELECTRICAL SPECIFICATIONS
Forward Conduction
Blocking
Parameters T40HFL T70HFL T85HFL Units Conditions
3
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T..HFL Series
Bulletin I27107 rev. A 09/97
T
J
Junction operating temp. -40 to 125
o
C
T
stg
Storage temperature range -40 to 150
o
C
R
thJC
Max. internal thermal
resistance junction to case
R
thC-S
Thermal resistance, case Mounting surface flat, smooth and greased.
to heatsink Per module
T Mounting Base to 1.3 ±10% Nm M3.5 mounting screws (2)
torque ±10% heatsink Non-lubricated threads
Busbar to Terminal 3 ±10% Nm M5 screws terminals; non-lubricated threads
wt Approximate weight 54 (19) g (oz) See outline table
Case style D-56 T-MODULE
(2) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the
spread of the compound
(*) Tested on LEM 300A Diodemeter Tester
0.2 K/W
Thermal and Mechanical Specifications
0.85 0.53 0.46 K/W Per module, DC operation
T40HFL T70HFL T85HFL
Parameter Units Conditions (*)
S02 S05 S10 S02 S05 S10 S02 S05 S10
t
rr
Maximum reverse T
J
= 25 °C, -di
F
/dt = 100A/µs
recovery time I
F
= 1 A to V
R
= 30V
T
J
= 25 °C, -di
F
/dt = 25A/µs
I
FM
= π x rated I
F(AV),
V
R
= -30 V
Q
rr
Maximum reverse T
J
= 25 °C, -di
F
/dt = 100A/µs
recovered charge I
F
= 1 A to V
R
= 30V
T
J
= 25 °C, -di
F
/dt = 25A/µs
I
FM
= π x rated I
F(AV)
V
R
= -30 V
200 500 1000 200 500 1000 200 500 1000 ns
0.25 0.4 1.35 0.25 0.4 1.35 0.3 0.6 1.6 µC
0.55 2.0 8.0 0.6 2.1 8.5 0.8 3.5 1.5 µC
70 110 270 70 110 270 80 120 290 ns
Reverse Recovery Characteristics
Sinusoidal conduction @ T
J
max. Rectangular conduction @ T
J
max.
Devices Units
180
o
120
o
90
o
60
o
30
o
180
o
120
o
90
o
60
o
30
o
T40HFL 0.06 0.08 0.10 0.14 0.24 0.05 0.08 0.10 0.15 0.24 K/W
T70HFL 0.05 0.06 0.08 0.11 0.19 0.04 0.06 0.08 0.12 0.19
T85HFL 0.04 0.05 0.06 0.09 0.15 0.03 0.05 0.07 0.09 0.015
R Conduction
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Parameters T40HFL T70HFL T85HFL Units Conditions
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