November 1995
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
___________________________________________________________________________________________
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol Parameter
2N7000 2N7002 NDS7002A
Units
V
DSS
Drain-Source Voltage 60 V
V
DGR
Drain-Gate Voltage (R
GS
< 1 MΩ)
60 V
V
GSS
Gate-Source Voltage - Continuous
±20
V
- Non Repetitive (tp < 50µs)
±40
I
D
Maximum Drain Current - Continuous 200 115 280 mA
- Pulsed 500 800 1500
P
D
Maximum Power Dissipation 400 200 300 mW
Derated above 25
o
C 3.2 1.6 2.4 mW/°C
T
J
,T
STG
Operating and Storage Temperature Range -55 to 150 -65 to 150 °C
T
L
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300 °C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient 312.5 625 417 °C/W
2N7000.SAM Rev. A1
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
S
D
G
S
G
D
TO-92
© 1997 Fairchild Semiconductor Corporation
