C-262
IRGPF40F
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) — 45 68 I
C
= 17A
Q
ge
Gate - Emitter Charge (turn-on) — 8.7 13 nC V
CC
= 400V See Fig. 8
Q
gc
Gate - Collector Charge (turn-on) — 15 23 V
GE
= 15V
t
d(on)
Turn-On Delay Time — 28 — T
J
= 25°C
t
r
Rise Time — 12 — ns I
C
= 17A, V
CC
= 720V
t
d(off)
Turn-Off Delay Time — 170 320 V
GE
= 15V, R
G
= 10Ω
t
f
Fall Time — 110 300 Energy losses include "tail"
E
on
Turn-On Switching Loss — 0.52 —
E
off
Turn-Off Switching Loss — 1.05 — mJ See Fig. 9, 10, 11, 14
E
ts
Total Switching Loss — 1.57 3.1
t
d(on)
Turn-On Delay Time — 27 — T
J
= 150°C,
t
r
Rise Time — 14 — ns I
C
= 17A, V
CC
= 720V
t
d(off)
Turn-Off Delay Time — 250 — V
GE
= 15V, R
G
= 10Ω
t
f
Fall Time — 240 — Energy losses include "tail"
E
ts
Total Switching Loss — 3.0 — mJ See Fig. 10, 14
L
E
Internal Emitter Inductance — 13 — nH Measured 5mm from package
C
ies
Input Capacitance — 1200 — V
GE
= 0V
C
oes
Output Capacitance — 91 — pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance — 15 — ƒ = 1.0MHz
Notes:
V
CC
=80%(V
CES
), V
GE
=20V, L=10µH,
R
G
= 10Ω, ( See fig. 13a )
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs,
single shot.
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 900 — — V V
GE
= 0V, I
C
= 250µA
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage 20 — — V V
GE
= 0V, I
C
= 1.0A
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage — 0.80 — V/°C V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.5 3.3 I
C
= 17A V
GE
= 15V
— 3.2 — V I
C
= 31A See Fig. 2, 5
— 2.9 — I
C
= 17A, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 5.5 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage — -12 — mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance 5.2 13 — S V
CE
= 100V, I
C
= 17A
I
CES
Zero Gate Voltage Collector Current — — 250 µA V
GE
= 0V, V
CE
= 900V
— — 1000 V
GE
= 0V, V
CE
= 900V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
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