Absolute Maximum Ratings
Parameter Units
I
D
@ V
GS
= 10V, T
C
= 25°C Continuous Drain Current 8.0
I
D
@ V
GS
= 10V, T
C
= 100°C Continuous Drain Current 5.0
I
DM
Pulsed Drain Current ➀ 32
P
D
@ T
C
= 25°C Max. Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy ➁ 700 mJ
I
AR
Avalanche Current ➀ 8.0 A
E
AR
Repetitive Avalanche Energy ➀ 12.5 mJ
dv/dt Peak Diode Recovery dv/dt ➂ 3.5
V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight 9.3 (Typical) g
PD - 90492D
HEXFET
®
MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
o
C
A
POWER MOSFET
THRU-HOLE (TO-254AA)
2/6/02
www.irf.com 1
TO-254AA
Product Summary
Part Number RDS(on) ID
IRFM440 0.85 Ω 8.0A
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
For footnotes refer to the last page
IRFM440
JANTX2N7222
JANTXV2N7222
REF:MIL-PRF-19500/596
500V, N-CHANNEL
HEXFET
®
MOSFET TECHNOLOGY
