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IRFM064

Part # IRFM064
Description TRANS MOSFET N-CH 60V 35A 3PIN TO-254AA - Bulk
Category Microcircuit
Availability In Stock
Qty 1
Qty Price
1 + $89.75360
Manufacturer Available Qty
International Rectifier
Date Code: 9743
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Absolute Maximum Ratings
Parameter Units
I
D
@ V
GS
= 10V, T
C
= 25°C Continuous Drain Current 35*
I
D
@ V
GS
= 10V, T
C
= 100°C Continuous Drain Current 35*
I
DM
Pulsed Drain Current 380
P
D
@ T
C
= 25°C Max. Power Dissipation 250 W
Linear Derating Factor 2.0 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy 620 mJ
I
AR
Avalanche Current —A
E
AR
Repetitive Avalanche Energy —mJ
dv/dt Peak Diode Recovery dv/dt 4.5
V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight 9.3 (Typical) g
PD - 90875A
HEXFET
®
MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
o
C
A
POWER MOSFET
THRU-HOLE (TO-254AA)
1/29/02
www.irf.com 1
60V, N-CHANNEL
HEXFET
®
MOSFET TECHNOLOGY
TO-254AA
Product Summary
Part Number RDS(on) ID
IRFM064 0.017 35A*
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
For footnotes refer to the last page
IRFM064
*Current is limited by pin diameter
IRFM064
2 www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage 60 V V
GS
= 0V, I
D
= 1.0mA
BV
DSS
/T
J
Temperature Coefficient of Breakdown 0.048 V/°C Reference to 25°C, I
D
= 1.0mA
Voltage
R
DS(on)
Static Drain-to-Source On-State 0.017 V
GS
= 10V, I
D
= 35A
Resistance
V
GS(th)
Gate Threshold Voltage 2.0 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 21 S ( )V
DS
> 15V, I
DS
= 35A
I
DSS
Zero Gate Voltage Drain Current 25 V
DS
= 48V ,V
GS
=0V
250 V
DS
= 48V,
V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Leakage Forward 100 V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse -100 V
GS
= -20V
Q
g
Total Gate Charge 240 V
GS
=10V, I
D
= 35A
Q
gs
Gate-to-Source Charge 53 nC V
DS
= 30V
Q
gd
Gate-to-Drain (‘Miller’) Charge 78
t
d(on)
Turn-On Delay Time 27 V
DD
= 30V, I
D
= 35A,
t
r
Rise Time 120 V
GS
=10V, R
G
= 2.35
t
d(off)
Turn-Off Delay Time 76
t
f
Fall Time 93
L
S
+ L
D
Total Inductance 6.8
C
iss
Input Capacitance 7400 V
GS
= 0V, V
DS
= 25V
C
oss
Output Capacitance 3200 pF f = 1.0MHz
C
rss
Reverse Transfer Capacitance 540
nA
nH
ns
µA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
Junction-to-Case 0.5
R
thJCS
Case-to-Sink 0.21
R
thJA
Junction-to-Ambient 48 Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
S
Continuous Source Current (Body Diode) 35*
I
SM
Pulse Source Current (Body Diode) 380
V
SD
Diode Forward Voltage 3.0 V T
j
= 25°C, I
S
= 35A, V
GS
= 0V
t
rr
Reverse Recovery Time 220 nS T
j
= 25°C, I
F
= 35A, di/dt 100A/µs
Q
RR
Reverse Recovery Charge 1.1 µC V
DD
50V
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
S
+ L
D
.
A
Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)
*Current is limited by pin diameter
www.irf.com 3
IRFM064
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
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