IRFL9014
2 www.irf.com
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.50 Ω V
GS
= -10V, I
D
= 1.1A
V
GS(th)
Gate Threshold Voltage -2.0 ––– -4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 1.3 ––– ––– S V
DS
= -25V, I
D
= 1.1A
––– ––– -100
µA
V
DS
= -60V, V
GS
= 0V
––– ––– -500 V
DS
= -48V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– -100
nA
V
GS
= -20V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 20V
Q
g
Total Gate Charge ––– ––– 12 I
D
=-6.7A
Q
gs
Gate-to-Source Charge ––– ––– 3.8 nC V
DS
=-48V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 5.1 V
GS
= -10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 11 ––– V
DD
= -30V
t
r
Rise Time ––– 63 –––
ns
I
D
= -6.7A
t
d(off)
Turn-Off Delay Time ––– 9.6 ––– R
G
= 24 Ω
t
f
Fall Time ––– 31 ––– R
D
= 4.0 Ω, See Fig. 10
nH
C
iss
Input Capacitance ––– 270 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 170 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 31 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ -6.7A, di/dt ≤90A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Notes:
V
DD=
-25V, starting T
J
= 25°C, L =50 mH
R
G
= 25Ω, I
AS
= -1.8A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -5.5 V T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 80 160 ns T
J
= 25°C, I
F
=-6.7A
Q
rr
Reverse RecoveryCharge ––– 0.096 0.19 µC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
––– –––
––– ––– -14
-1.8
A
Between lead, 6mm(0.25in)
from package and center
of die contact.
L
S Internal Source Inductance
Internal Drain Inductance
L
D
––– 4.0 –––
––– 6.0 –––
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– -0.059 ––– V/°C Reference to 25°C, I
D
= 1mA
V
(BR)DSS
Drain-to-Source Breakdown Voltage -60 ––– ––– V V
GS
= 0V, I
D
= 250µA
Parameter Min. Typ. Max. Units Conditions
Source-Drain Ratings and Characteristics
S
D
G
S
D
G
