4-288
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specified
IRFD220 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
200 V
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
200 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
0.8 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
6.4 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
1.0 W
Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.008 W/
o
C
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
85 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
,T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to T
J
= 125
o
C.
Electrical Specifications T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 250µA, V
GS
= 0V (Figure 9) 200 - - V
Gate to Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250µA 2.0 - 4.0 V
Zero Gate Voltage Drain Current I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V - - 25 µA
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C - - 250 µA
On-State Drain Current (Note 2) I
D(ON)
V
DS
>I
D(ON)
xr
DS(ON)MAX
,V
GS
= 10V (Figure 6) 0.8 - - A
Gate to Source Leakage Current I
GSS
V
GS
= ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) r
DS(ON)
I
D
= 0.4A, V
GS
= 10V (Figures 7, 8) - 0.5 0.8 Ω
Forward Transconductance (Note 2) g
fs
V
DS
> I
D(ON)
x r
DS(ON)MAX
, I
D
= 0.4A (Figure 11) 0.5 1.1 - S
Turn-On Delay Time t
d(ON)
V
DD
= 0.5 x Rated BV
DSS
, I
D
≈ 0.8A,
R
G
= 9.1Ω, R
L
= 74Ω, V
GS
= 10V,
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-2040ns
Rise Time t
r
-3060ns
Turn-Off Delay Time t
d(OFF)
- 50 100 ns
Fall Time t
f
-3060ns
Total Gate Charge
(Gate to Source + Gate to Drain) Q
g(TOT)
V
GS
= 10V, I
D
≈ 0.8A, V
DS
= 0.8 x Rated BV
DSS
I
G(REF)
= 1.5mA, (Figure 13) Gate Charge is
Essentially Independent of Operating Temperature
-1115nC
Gate to Source Charge Q
gs
- 6.0 - nC
Gate to Drain “Miller” Charge Q
gd
- 5.0 - nC
Input Capacitance C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1MHz (Figure 10) - 450 - pF
Output Capacitance C
OSS
- 150 - pF
Reverse Transfer Capacitance C
RSS
-40- pF
Internal Drain Inductance L
D
Measured from the Drain
Lead, 2mm (0.08in) from
Package to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 4.0 - nH
Internal Source Inductance L
S
Measured from the Source
Lead, 2mm (0.08in) from
Header to Source Bonding
Pad
- 6.0 - nH
Thermal Resistance Junction to Ambient R
θJA
Free Air Operation - - 120
o
C/W
L
S
L
D
G
D
S
IRFD220
