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HMMC-5618

Part # HMMC-5618
Description RF AMP MOD SGL PWR AMP 20GHZ5.5V - Gel-pak, waffle pack,
Category Microcircuit
Availability Out of Stock
Qty 0
Qty Price
1 + $69.38950

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

6-67
HMMC-5618 Typical Scattering Parameters
[1]
,
(T
A
= 25°C, V
D1
= V
D2
= 5.0 V, V
G1
= V
G2
= Open, Z
o
= 50 Ω
Freq. S
11
S
21
S
12
S
22
GHz dB Mag Ang dB Mag Ang dB Mag Ang dB Mag Ang
2.0 -4.8 0.574 -140.8 -71.2 0.000 -73.5 -43.0 0.0070 117.3 -0.9 0.901 -75.4
2.5 -5.6 0.526 -166.9 -74.4 0.000 -12.0 -25.3 0.0544 -113.7 -1.6 0.835 -99.7
3.0 -6.0 0.501 166.4 -73.6 0.000 -41.3 -8.0 0.3981 -124.1 -3.3 0.687 -127.0
3.5 -6.2 0.492 136.2 -55.9 0.002 -51.8 2.9 1.4008 -159.1 -6.1 0.498 -156.7
4.0 -6.7 0.461 99.3 -49.4 0.003 -94.9 10.4 3.3208 154.4 -10.3 0.305 171.1
4.5 -8.8 0.363 60.6 -45.5 0.005 -140.6 14.2 5.1331 104.5 -16.7 0.147 133.8
5.0 -11.9 0.255 30.7 -43.8 0.006 -179.4 15.4 5.9052 62.9 -23.2 0.069 76.1
5.5 -14.4 0.190 10.9 -43.8 0.006 152.8 15.6 6.0539 31.6 -22.0 0.079 21.3
6.0 -15.8 0.163 -3.8 -43.4 0.007 132.6 15.6 6.0319 6.8 -18.9 0.114 -5.5
6.5 -16.4 0.152 -16.2 -43.4 0.007 116.8 15.6 6.0062 -14.1 -16.8 0.144 -19.6
7.0 -16.3 0.153 -27.4 -43.1 0.007 101.8 15.5 5.9669 -32.7 -15.4 0.171 -30.5
7.5 -16.0 0.159 -38.0 -43.0 0.007 87.6 15.5 5.9318 -49.7 -14.3 0.193 -39.4
8.0 -15.4 0.171 -48.2 -42.8 0.007 79.1 15.4 5.8635 -65.4 -13.5 0.212 -47.1
8.5 -14.9 0.180 -58.5 -42.7 0.007 68.9 15.4 5.8567 -80.0 -12.9 0.227 -54.4
9.0 -14.5 0.189 -67.5 -42.5 0.008 58.9 15.3 5.8232 -94.2 -12.5 0.237 -61.4
9.5 -14.1 0.198 -75.8 -42.3 0.008 50.2 15.2 5.7757 -107.8 -12.2 0.246 -67.8
10.0 -13.7 0.206 -83.6 -42.0 0.008 41.0 15.2 5.7385 -121.0 -12.0 0.252 -73.9
10.5 -13.4 0.214 -91.2 -42.0 0.008 33.7 15.1 5.7043 -133.8 -11.9 0.254 -79.6
11.0 -13.2 0.219 -98.3 -42.0 0.008 27.5 15.1 5.6618 -146.2 -11.9 0.253 -85.2
11.5 -13.0 0.223 -105.1 -41.7 0.008 19.8 15.0 5.6180 -158.4 -12.0 0.250 -90.0
12.0 -13.0 0.224 -111.4 -41.3 0.009 13.9 14.9 5.5801 -170.4 -12.2 0.245 -94.3
12.5 -13.0 0.224 -117.5 -40.9 0.009 6.2 14.9 5.5525 177.7 -12.5 0.238 -98.2
13.0 -13.1 0.221 -123.2 -40.8 0.009 1.0 14.9 5.5276 166.0 -12.8 0.230 -101.6
13.5 -13.3 0.217 -128.7 -40.5 0.009 -6.7 14.8 5.5138 154.2 -13.1 0.221 -104.3
14.0 -13.5 0.210 -134.1 -40.2 0.010 -12.5 14.8 5.5069 142.3 -13.5 0.211 -106.2
14.5 -13.9 0.201 -138.9 -40.0 0.010 -17.5 14.8 5.4997 130.5 -13.9 0.201 -107.1
15.0 -14.5 0.188 -143.4 -39.2 0.011 -25.3 14.8 5.5050 118.6 -14.4 0.191 -106.8
15.5 -15.2 0.174 -147.2 -39.1 0.011 -31.8 14.8 5.5089 106.3 -14.7 0.184 -105.4
16.0 -16.2 0.155 -150.0 -38.6 0.012 -38.9 14.8 5.5103 93.8 -14.9 0.180 -103.4
16.5 -17.5 0.133 -150.7 -38.4 0.012 -45.8 14.8 5.5013 80.9 -14.9 0.180 -100.3
17.0 -19.2 0.110 -147.8 -37.8 0.013 -52.1 14.8 5.4892 67.9 -14.6 0.186 -97.4
17.5 -21.1 0.088 -138.0 -37.3 0.014 -60.7 14.7 5.4475 54.4 -14.3 0.194 -95.6
18.0 -22.1 0.079 -117.7 -36.7 0.015 -69.6 14.7 5.4016 40.5 -13.7 0.206 -95.1
18.5 -20.7 0.092 -96.6 -35.9 0.016 -74.8 14.5 5.3231 26.1 -13.3 0.217 -96.0
19.0 -18.2 0.123 -83.9 -35.4 0.017 -85.0 14.3 5.2168 11.2 -13.0 0.224 -98.0
19.5 -15.4 0.169 -80.3 -35.0 0.018 -95.7 14.0 5.0371 -4.3 -12.9 0.226 -99.4
20.0 -13.0 0.224 -81.8 -34.8 0.018 -105.6 13.7 4.8240 -19.9 -13.0 0.225 -100.9
20.5 -11.1 0.278 -85.7 -34.7 0.018 -114.9 13.2 4.5580 -36.4 -13.3 0.217 -99.8
21.0 -9.6 0.332 -91.2 -34.2 0.020 -126.3 12.5 4.2135 -52.5 -13.8 0.205 -97.5
21.5 -8.3 0.384 -97.7 -34.3 0.019 -137.2 11.7 3.8489 -68.9 -14.0 0.199 -90.2
22.0 -7.3 0.432 -284.7 -34.2 0.020 -328.3 10.8 3.4671 -85.5 -13.4 0.214 -80.1
Note:
1. Data obtained from on-wafer measurements.
6-68
HMMC-5618 Typical Performance
Figure 2. Gain and Isolation vs.
Frequency.
[1]
20
15
10
5
0
0
10
20
30
40
50
SMALL-SIGNAL GAIN (dB)
REVERSE ISOLATION (dB)
2 6 10 14 18 22
FREQUENCY
(GHz)
V
D2
= 5.0 V, V
G1
= V
G2
= Open
Gain
Isolation
Spec Range
5.9 – 20 GHz
V
D1
= 3.0 V
V
D1
= 5.0 V
Figure 3. Input and Output Return
Loss vs. Frequency.
[1]
0
5
10
15
20
25
0
5
10
15
20
25
INPUT RETURN LOSS (dB)
OUTPUT RETURN LOSS (dB)
2 6 10 14 18 22
FREQUENCY
(GHz)
V
D1
= V
D2
= 5.0 V, V
G1
= V
G2
= Open
Output
Input
Spec Range
5.9 – 20 GHz
Figure 4. Effects of Input/Output Bond
Wire Inductance on Gain and
Isolation.
[2]
20
15
10
5
0
0
10
20
30
40
50
SMALL-SIGNAL GAIN (dB)
REVERSE ISOLATION (dB)
2 6 10 14 18 22
FREQUENCY
(GHz)
V
D1
= V
D2
= 5.0 V, V
G1
= V
G2
= Open
Gain
Isolation
Spec Range
5.9 – 20 GHz
Figure 5. Noise Figure vs. Frequency.
[1]
10
8
6
4
2
0
NOISE FIGURE (dB)
4 8 12 16 20
FREQUENCY
(GHz)
V
D1
= V
D2
= 5.0 V, V
G1
= V
G2
= Open
Spec Range
5.9 – 20 GHz
Wafer-Probed
Measurements
Figure 6. Effects of Input/ Output
Bond Wire Inductance on Input Return
Loss.
[2]
0
5
10
15
20
25
INPUT RETURN LOSS (dB)
2 6 10 14 18 22
FREQUENCY
(GHz)
V
D1
= V
D2
= 5.0 V, V
G1
= V
G2
= Open
Spec Range
5.9 – 20 GHz
Includes 0.2 nH
wire inductance
Wafer-Probed
Measurements
Figure 7. Effects of Input/Output Bond
Wire Inductance on Output Return
Loss.
[2]
0
5
10
15
20
25
OUTPUT RETURN LOSS (dB)
2 6 10 14 18 22
FREQUENCY
(GHz)
V
D1
= V
D2
= 5.0 V, V
G1
= V
G2
= Open
Spec Range
5.9 – 20 GHz
Includes 0.2 nH
wire inductance
Wafer-Probed
Measurements
Notes:
1. Wafer-probed measurements.
2. Effect of 0.2 nH inductance in the RF input and RF output bond wires is modeled from measured
wafer-probe tests calibrated at the pads of the MMIC device.
Includes 0.2 nH
wire inductance
6-69
This data sheet contains a variety of typical and guaranteed performance data. The
information supplied should not be interpreted as a complete list of circuit specifica-
tions. In this data sheet the term typical refers to the 50th percentile performance. For
additional information contact your local HP sales representative.
Figure 8. HMMC-5618 Assembly Diagrams.
Figure 9. HMMC-5618 Bonding Pad Positions. (Dimensions are in micrometers.)
Figure 8a. Assembly for single drain-bias operation.
Figure 8b. Assembly with gate bias connections.
Gold Plated Shim
(Optional)
Chip Capacitor
(≥68 pF)
RF
IN
RF
OUT
To V
DD
Power Supply
To V
G2
Power
Supply
To V
G1
Power
Supply
Bonding Island
or Small
Chip-Capacitor
Gold Plated Shim
(Optional)
Chip Capacitor
(≥68 pF)
RF
IN
RF
OUT
To V
DD
Power Supply
0
0
920
530
0
0
530
143 573355
79 593 920
V
D2
OUT
V
D1
IN
V
G1
V
G2
PREVIOUS12
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