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A2010D

Part # A2010D
Description
Category Microcircuit
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.


SLOS417A − OCTOBER 2003 − REVISED DECEMBER 2003
      
FEATURES
D Maximum Battery Life and Minimum Heat
− Efficiency With an 8-Speaker:
− 88% at 400 mW
− 80% at 100 mW
− 2.8-mA Quiescent Current
− 0.5-µA Shutdown Current
D Only Three External Components
− Optimized PWM Output Stage Eliminates
LC Output Filter
− Internally Generated 250-kHz Switching
Frequency Eliminates Capacitor and
Resistor
− Improved PSRR (−75 dB) and Wide Supply
Voltage (2.5 V to 5.5 V) Eliminates Need
for a Voltage Regulator
− Fully Differential Design Reduces RF
Rectification and Eliminates Bypass
Capacitor
− Improved CMRR Eliminates Two Input
Coupling Capacitors
D Wafer Chip Scale Packaging (WCSP)
− NanoFreeE Lead-Free (YZF)
− NanoStarE SnPb (YEF)
APPLICATIONS
D Ideal for Wireless or Cellular Handsets and
PDAs
DESCRIPTION
The TPA2010D1 is a 2.5-W high efficiency filter-free
class-D audio power amplifier in a 1.45 mm × 1.45 mm
wafer chip scale package (WCSP) that requires only three
external components.
Features like 88% efficiency, −75-dB PSRR, improved
RF-rectification immunity, and 8 mm
2
total PCB area make
the TPA2010D1 ideal for cellular handsets. A fast start-up
time of 1 ms with minimal pop makes the TP2010D1 ideal
for PDA applications.
In cellular handsets, the earpiece, speaker phone, and
melody ringer can each be driven by the TPA2010D1. The
TPA2010D1 allows independent gain while summing
signals from seperate sources, and has a low 36 µV noise
floor, A-weighted.
APPLICATION CIRCUIT
_
+
IN−
IN+
PWM H−
Bridge
V
O+
V
O−
Internal
Oscillator
C
S
To Battery
V
DD
GND
Bias
Circuitry
R
I
R
I
+
Differential
Input
TPA2010D1
SHUTDOWN
A1 A2 A3
B1 B2 B3
C1 C2 C3
IN+ GND V
O−
V
DD
PV
DD
GND
IN− SHUTDOWN
V
O+
1,55 mm
9-BALL
WAFER CHIP SCALE
YZF, YEF PACKAGES
TPA2010D1 DIMENSIONS
(TOP VIEW OF PCB)
Note: Pin A1 is marked with a “0” for
Pb−free (YZF) and a “1” for SnPb (YEF).
1,40 mm
1,55 mm
1,40 mm
    !"#   $"%&! '# '"!
!  $#!! $# (# #  #) "# '' *+
'"! $!#, '#  #!#&+ !&"'# #,  && $##
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
www.ti.com
Copyright 2003, Texas Instruments Incorporated
NanoFree and NanoStar are trademarks of Texas Instruments.

SLOS417A − OCTOBER 2003 − REVISED DECEMBER 2003
www.ti.com
2
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate
precautions. Failure to observe proper handling and installation procedures can cause damage.
ORDERING INFORMATION
T
A
PACKAGE PART NUMBER SYMBOL
−40°C to 85°C
Wafer chip scale package (YEF) TPA2010D1YEF
(1)
AJZ
−40
°
C to 85
°
C
Wafer chip scale packaging − Lead free (YZF) TPA2010D1YZF
(1)
AKO
(1)
The YEF and YZF packages are only available taped and reeled. To order add the suffix “R” to the end of the part number for a reel of 3000, or
add the suffix “T” to the end of the part number for a reel of 250 (e.g. TPA2010D1YEFR).
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
(1)
TPA2010D1
Supply voltage, V
DD
In active mode −0.3 V to 6 V
Supply voltage, V
DD
In SHUTDOWN mode −0.3 V to 7 V
Input voltage, V
I
−0.3 V to V
DD
+ 0.3 V
Continuous total power dissipation See Dissipation Rating Table
Operating free-air temperature, T
A
−40°C to 85°C
Operating junction temperature, T
J
−40°C to 125°C
Storage temperature, T
stg
−65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
YZF 260°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
YEF 235°C
(1)
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
MIN NOM MAX UNIT
Supply voltage, V
DD
2.5 5.5 V
High-level input voltage, V
IH
SHUTDOWN 1.3 V
DD
V
Low-level input voltage, V
IL
SHUTDOWN 0 0.35 V
Input resistor, R
I
Gain 20 V/V (26 dB) 15 k
Common mode input voltage range, V
IC
V
DD
= 2.5 V, 5.5 V, CMRR −49 dB 0.5 V
DD
−0.8 V
Operating free-air temperature, T
A
−40 85 °C
PACKAGE DISSIPATION RATINGS
PACKAGE
DERATING
FACTOR
(1)
T
A
25°C
POWER RATING
T
A
= 70°C
POWER RATING
T
A
= 85°C
POWER RATING
YEF 7.8 mW/°C 780 mW 429 mW 312 mW
YZF 7.8 mW/°C 780 mW 429 mW 312 mW
(1)
Derating factor measure with High K board.

SLOS417A − OCTOBER 2003 − REVISED DECEMBER 2003
www.ti.com
3
ELECTRICAL CHARACTERISTICS
T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
|V
OS
|
Output offset voltage (measured
differentially)
V
I
= 0 V, A
V
= 2 V/V, V
DD
= 2.5 V to 5.5 V 1 25 mV
PSRR Power supply rejection ratio V
DD
= 2.5 V to 5.5 V −75 −55 dB
CMRR Common mode rejection ratio
V
DD
= 2.5 V to 5.5 V, V
IC
= V
DD
/2 to 0.5 V
V
IC
= V
DD
/2 to V
DD
− 0.8 V
−68 −49 dB
I
IH
High-level input current V
DD
= 5.5 V, V
I
= 5.8 V 100 µA
I
IL
Low-level input current V
DD
= 5.5 V, V
I
= −0.3 V 5 µA
V
DD
= 5.5 V, no load 3.4 4.9
I
(Q)
Quiescent current
V
DD
= 3.6 V, no load 2.8
mA
I
(Q)
Quiescent current
V
DD
= 2.5 V, no load 2.2 3.2
mA
I
(SD)
Shutdown current V
(SHUTDOWN)
= 0.35 V, V
DD
= 2.5 V to 5.5 V 0.5 2 µA
V
DD
= 2.5 V 700
r
DS(on)
Static drain-source on-state resistance
V
DD
= 3.6 V 500
m
r
DS(on)
Static drain-source on-state resistance
V
DD
= 5.5 V 400
m
Output impedance in SHUTDOWN V
(SHUTDOWN)
= 0.4 V >1 k
f
(sw)
Switching frequency V
DD
= 2.5 V to 5.5 V 200 250 300 kHz
Gain V
DD
= 2.5 V to 5.5 V
285 kW
R
I
300 kW
R
I
315 kW
R
I
V
V
Resistance from shutdown to GND 300 k
OPERATING CHARACTERISTICS
T
A
= 25°C, Gain = 2 V/V, R
L
= 8 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
THD + N= 10%, f = 1 kHz,
V
DD
= 5 V 2.5
THD + N= 10%, f = 1 kHz,
R
L
= 4
V
DD
= 3.6 V 1.3
W
R
L
= 4
V
DD
= 2.5 V 0.52
W
THD + N= 1%, f = 1 kHz,
V
DD
= 5 V 2.08
THD + N= 1%, f = 1 kHz,
R
L
= 4
V
DD
= 3.6 V 1.06
W
P
O
R
L
= 4
V
DD
= 2.5 V 0.42
W
P
O
THD + N= 10%, f = 1 kHz,
V
DD
= 5 V 1.45
THD + N= 10%, f = 1 kHz,
R
L
= 8
V
DD
= 3.6 V 0.73
W
R
L
= 8
V
DD
= 2.5 V 0.33
W
THD + N= 1%, f = 1 kHz,
V
DD
= 5 V 1.19
THD + N= 1%, f = 1 kHz,
R
L
= 8
V
DD
= 3.6 V 0.59
W
R
L
= 8
V
DD
= 2.5 V 0.26
W
V
DD
= 5 V, P
O
= 1 W, R
L
= 8 Ω, f = 1 kHz 0.18%
THD+N Total harmonic distortion plus noise
V
DD
= 3.6 V, P
O
= 0.5 W, R
L
= 8 Ω, f = 1 kHz 0.19%
THD+N
V
DD
= 2.5 V, P
O
= 200 mW, R
L
= 8 Ω, f = 1 kHz 0.20%
k
SVR
Supply ripple rejection ratio
V
DD
= 3.6 V, Inputs ac-
grounded with C
i
= 2 µF
f = 217 Hz,
V
(RIPPLE)
= 200 mV
pp
−67 dB
SNR Signal-to-noise ratio V
DD
= 5 V, P
O
= 1 W, R
L
= 8 97 dB
V
n
V
DD
= 3.6 V,
f = 20 Hz to 20 kHz,
No weighting 48
V
RMS
V
n
f = 20 Hz to 20 kHz,
Inputs ac-grounded with
C
i
= 2 µF
A weighting 36
µ
V
RMS
CMRR Common mode rejection ratio V
DD
= 3.6 V, V
IC
= 1 V
pp
f = 217 Hz −63 dB
Z
I
Input impedance 142 150 158 k
Start-up time from shutdown V
DD
= 3.6 V 1 ms
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