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69460

Part # 69460
Description
Category INDUCTOR
Availability In Stock
Qty 10
Qty Price
1 - 2 $36.10847
3 - 4 $28.72265
5 - 6 $27.08135
7 - 8 $25.16651
9 + $22.43102
Manufacturer Available Qty
PICO ELECTRONICS
Date Code: 0925
  • Shipping Freelance Stock: 10
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Ver. AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: February 2011
1
FC694601
Silicon N-channel MOS FET
For switching circuits
Overview
FC694601 is N-channel dual type small signal MOS FET employed small size
surface mounting package.
Features
Low drain-source ON resistance: R
DS(on)
typ. = 6 W (V
GS
= 4.0 V)
High-speed switching
Small size surface mounting package: SSMini6-F3-B
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
FET1
FET2
Drain-source surrender voltage V
DSS
60 V
Gate-source surrender voltage V
GSS
±12
V
Drain current I
D
100 mA
Peak drain current I
DP
200 mA
Overall
Total power dissipation P
T
125 mW
Channel temperature T
ch
150
°C
Storage temperature T
stg
–55 to +150
°C
Package
Code
SSMini6-F3-B
Pin Name
1: Source (FET1) 4: Source (FET2)
2: Gate (FET1) 5: Gate (FET2)
3: Drain (FET2) 6: Drain (FET1)
Marking Symbol: V6
Internal Connection
3
(D2)
(S2)
4
1
(S1)
2
(G1)
(D1)
6
(G2)
5
FET1
FET2
Ver. AED
This product complies with the RoHS Directive (EU 2002/95/EC).
FC694601
2
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage V
DSS
I
D
= 1 mA, V
GS
= 0 60 V
Drain-source cutoff current I
DSS
V
DS
= 60 V, V
GS
= 0 1.0
mA
Gate-source cutoff current I
GSS
V
GS
= ±10 V, V
DS
= 0
±10 mA
Gate threshold voltage V
TH
I
D
= 1.0 mA, V
DS
= 3.0 V 0.9 1.2 1.5 V
Drain-source ON resistance R
DS(on)
I
D
= 10 mA, V
GS
= 2.5 V 8 15
W
I
D
= 10 mA, V
GS
= 4.0 V 6 12
W
Forward transfer admittance
Y
fs
I
D
= 10 mA, V
DS
= 3.0 V 20 60 mS
Short-circuit input capacitance (Common source)
C
iss
V
DS
= 3 V, V
GS
= 0, f = 1 MHz
12 pF
Short-circuit output capacitance (Common source)
C
oss
7 pF
Reverse transfer capacitance (Common source)
C
rss
3 pF
Turn-on time
*
t
on
V
DD
= 3 V, V
GS
= 0 V to 3 V,
I
D
= 10 mA
100 ns
Turn-off time
*
t
off
V
DD
= 3 V, V
GS
= 3 V to 0 V,
I
D
= 10 mA
100 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Test circuit
V
DD
= 3 V
I
D
= 10 mA
R
L
= 300 Ω
V
OUT
V
IN
D
G
S
50 Ω
V
IN
90%
10%
10%
90%
V
OUT
t
on
t
off
V
GS
= 0 V to 3 V
Ver. AED
This product complies with the RoHS Directive (EU 2002/95/EC).
FC694601
3
I
D
V
DS
I
D
V
GS
R
DS(on)
V
GS
0
0.50.40.30.20.1
100
20
40
60
80
0
FC694601_ I
D
-V
DS
Drain-source voltage V
DS
(V)
Drain current I
D
(mA)
2.1 V
2.5 V
V
GS
= 4.0 V
1.8 V
T
a
= 25°C
0
2.52.01.51.00.5
10
−3
10
−2
1
10
10
−1
10
2
FC694601_ I
D
-V
GS
Gate-source voltage V
GS
(V)
Drain current I
D
(mA)
T
a
= 85°C
−30°C
25°C
V
DS
= 3 V
0
102 4 6 8
10
−1
1
10
10
2
FC694601_ R
DS(on)
-V
GS
Gate-source voltage V
GS
(V)
Drain-source ON resistance R
DS(on)
(Ω)
T
a
= 25°C
I
D
= 0.01 A
FC694601_ R
DS(on)
-I
D
Drain current I
D
(mA)
Drain-source ON resistance R
DS(on)
(Ω)
1 10 10
2
10
−1
1
10
10
2
10
−1
V
GS
= 2.5 V
4.0 V
T
a
= 25°C
0
105 15 20
0
5
10
15
20
25
FC694601_
C
iss
, C
rss
, C
oss
-V
DS
Drain-source voltage
V
DS
(
V
)
Short-circuit input capacitance (Common source) C
iss
,
Reverse transfer capacitance (Common source) C
rss
,
Short-circuit output capacitance (Common source) C
oss
(pF)
C
iss
C
rss
C
oss
T
a
= 25°C
FC694601
_|
Y
fs
|
-I
D
Forward transfer admittance |Y
fs
| (S)
Drain current I
D
(mA)
10
−3
10
−2
10
−1
1
1 10 10
2
10
3
T
a
= 25°C
V
DS
= 3 V
R
DS(on)
I
D
P
T
T
a
C
iss
, C
rss
, C
oss
V
DS
Y
fs
I
D
0
40
12080 160
0
25
50
75
150
125
100
FC694601_ P
T
-T
a
Total power dissipation P
T
(mW)
Ambient temperature T
a
(°C)
12NEXT
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