Philips Semiconductors
Si4410DY
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 05 July 2001 2 of 13
9397 750 08048
© Philips Electronics N.V. 2001. All rights reserved.
5. Quick reference data
6. Limiting values
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
DS
drain-source voltage (DC) T
j
=25to150°C − 30 V
I
D
drain current T
amb
=25°C; pulsed; t
p
≤ 10 s − 10 A
P
tot
total power dissipation T
amb
=25°C; pulsed; t
p
≤ 10 s − 2.5 W
T
j
junction temperature − 150 °C
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
= 10 A; T
j
=25°C 11 13.5 mΩ
V
GS
= 4.5 V; I
D
= 5 A; T
j
=25°C 1520mΩ
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) T
j
=25to150°C − 30 V
V
GS
gate-source voltage (DC) −±20 V
I
D
drain current T
amb
=25°C; pulsed; t
p
≤ 10 s; Figure 2 and 3 − 10 A
T
amb
=70°C; pulsed; t
p
≤ 10 s; Figure 2 − 8A
I
DM
peak drain current T
amb
=25°C; pulsed; t
p
≤ 10 µs; Figure 3 − 50 A
P
tot
total power dissipation T
amb
=25°C; pulsed; t
p
≤ 10 s; Figure 1 − 2.5 W
T
amb
=70°C; pulsed; t
p
≤ 10 s; Figure 1 − 1.6 W
T
stg
storage temperature −55 +150 °C
T
j
operating junction temperature −55 +150 °C
Source-drain diode
I
S
source (diode forward) current T
amb
=25°C; pulsed; t
p
≤ 10 s − 2.3 A
